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Pizza Pie With Concentric Rings of Crust
A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
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| Number | Title | Issue Date |
| 7388239 | Frame shutter pixel with an isolated storage node A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion. ... | 06/17/2008 |
| 7307327 | Reduced crosstalk CMOS image sensors CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate, an epitaxial layer above the substrate, and a plurality of pixels ext... | 12/11/2007 |
| 6692982 | Optical semiconductor integrated circuit device and manufacturing method for the same In an optical semiconductor integrated circuit device in which a vertical pnp transistor and a photodiode are formed, the preferred embodiments of the present invention eliminates difficulty in performance improvement of the two elements. In an illustrati... | 02/17/2004 |
| 6690002 | Photodetector array and optical communication monitor module using the same When a diffraction grating having a grating period of d and a diffraction order of m for an incident light having a wavelength interval Ɗλi between i'th and (i+1)'th channels is used, an optical path length between the diffraction grating and... | 02/10/2004 |
| 6677656 | High-capacitance photodiode A monolithic photodetector including a photodiode, a precharge MOS transistor, a control MOS transistor, a read MOS transistor, and a transfer MOS transistor, the photodiode and the transfer transistor being formed in a same substrate of a first conductiv... | 01/13/2004 |
| 6670657 | Integrated circuit having photodiode device and associated fabrication process An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the jun... | 12/30/2003 |
| 6621104 | Integrated optoelectronic thin-film sensor and method of producing same A measuring system that includes a scale and a transparent substrate located opposite the scale. The transparent includes a graduation structure and a semiconductor layer arranged on a first side of the transparent substrate facing away from the scale, wh... | 09/16/2003 |
| 6573578 | Photo semiconductor integrated circuit device and optical recording reproducing apparatus A photo semiconductor integrated circuit device has a photodiode portion and amplifier portion, each portion having a buried layer. The impurity concentration and/or depth of the buried layer for the photodiode portion is lower than that of the buried lay... | 06/03/2003 |
| 6553157 | Optoelectronic microelectronic system In an integrated optoelectronic microelectronic system, an optoelectronically active diode part is formed in a semiconductor substrate by zones forming depletion layers. The system is provided in a mesa that stands vertically on a semiconductor substrate ... | 04/22/2003 |
| 6512544 | Storage pixel sensor and array with compression A storage pixel sensor disposed on a semiconductor substrate comprises a photosensor. At least one nonlinear capacitive element is coupled to the photosensor. At least one nonlinear capacitive element is arranged to have a compressive photocharge-to-volta... | 01/28/2003 |
| 6479825 | Low-energy particle sensor A low-energy particle sensor includes current collection areas which take the form of diodes partially covering the substrate. In detection areas defined alongside the collection areas the small thickness of the material enables low-energy particles (in p... | 11/12/2002 |
| 6458614 | Opto-electronic integrated circuit An optical electronic integrated circuit comprises: a silicon substrate; an electronic circuit formed in the silicon substrate and processing an electric signal; a ZnO film formed on at least portion of the silicon substrate; and an optical circuit electr... | 10/01/2002 |
| 6404029 | Light sensitive element and light sensitive element having internal circuitry A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of ... | 06/11/2002 |
| 6380602 | Semiconductor device A semiconductor device in which a photoreceptor element and a semiconductor element are formed on a common semiconductor substrate, includes: a substrate of a first conductive type; and a semiconductor layer of a second conductive type formed on the subst... | 04/30/2002 |
| 6376871 | Semiconductor device having photodetector and optical pickup system using the same A semiconductor device includes a photodetector having a junction at which a first conductive type first semiconductor portion and a second conductive type second semiconductor portion are joined to each other. In this photodetector, division regions are ... | 04/23/2002 |
| 6355945 | Semiconductor optical device and optoelectronic integrated circuit device including a ZnO buffer layer A semiconductor optical device includes a GaAs substrate, a light-emitting/light-receiving layer including a GaN-based compound semiconductor, and a ZnO film formed between the GaAs substrate and the light-emitting/light receiving layer.... | 03/12/2002 |
| 6333204 | Dual EPI active pixel cell design and method of making the same The present invention is a dual epi active pixel sensor cell having a p- region of dual thickness and a method of making the same. The dual epi active pixel sensor cell produces a sensor with improved noise and latch-up reduction and improved red absorpti... | 12/25/2001 |
| 6313484 | Circuit-integrated light-receiving device A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor crystal growth layer of the first conductivity type provided on a surface of the semiconductor sub... | 11/06/2001 |
| 6214684 | Method of forming a semiconductor device using an excimer laser to selectively form the gate insulator To form a high-quality insulating layer at a low temperature, a semiconductor layer is formed on an insulating surface of an insulating substrate, and the semiconductor layer is selectively modified by an excimer laser irradiated from a surface opposing t... | 04/10/2001 |
| 6198146 | Photo detective unit and electric apparatus using the same A photo detective unit includes a photo detective semiconductor chip including a photo detective element formed under a first manufacturing condition and a buffer circuit for shaping output waveform of the photo detective element, and a signal processing ... | 03/06/2001 |
| 6184054 | Optical electronic IC capable of photo detection and its process An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and processed by the s... | 02/06/2001 |
| 6184100 | Method of manufacturing a photodiode In a light receiving element and a semiconductor device manufacturing method, the low density PN junction is formed by constructing the internal composition of the photodiode with N+ type diffusion layer, N- type epitaxial layer, P | 02/06/2001 |
| 6184055 | CMOS image sensor with equivalent potential diode and method for fabricating the same A CMOS image sensor according to the present invention has a low-voltage photodiode which is fully depleted at a bias of 1.2-4.5V. The photodiode comprises: a P-epi layer; a field oxide layer dividing the P-epi layer into a field region and an active regi... | 02/06/2001 |
| 6180969 | CMOS image sensor with equivalent potential diode A CMOS image sensor according to the present invention has a low-voltage photodiode which is fully depleted at a bias of 1.2-4.5V. The photodiode comprises: a P-epi layer; a field oxide layer dividing the P-epi layer into a field region and an active regi... | 01/30/2001 |
| 6157035 | Spatially modulated detector for radiation A novel radiation detector, a detection principle and an associated structure are provided for semiconductor substrate detectors in general and for CMOS based circuits in particular. For an optical detector, photons absorbed in the neutral zone of the sub... | 12/05/2000 |
| 6140145 | Integrated infrared detection system This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial l... | 10/31/2000 |
| 6091127 | Integrated infrared detection system This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial l... | 07/18/2000 |
| 6090639 | Method for forming a photo diode and a CMOS transistor simultaneously The present invention provides a method of simultaneously forming a photo diode and a CMOS transistor on a semiconductor wafer. The surface of the semiconductor wafer comprising a P-type substrate with at least one N-channel MOS area for forming a NMOS tr... | 07/18/2000 |
| 6069378 | Photo sensor integrated circuit A photo diode and a signal processing circuit are formed on a silicon substrate. The signal processing circuit comprises a PNP transistor and an NPN transistor. A region of the signal processing circuit on the silicon substrate is covered by an aluminum t... | 05/30/2000 |
| 6054747 | Integrated photoreceiver having metal-insulator-semiconductor switch An integrated photoreceiver is provided. The photoreceiver includes a substrate, a metal-insulator-semiconductor switch (MISS) formed on a first portion of the substrate, and a photoreceiving structure formed on a second portion of the substrate for recei... | 04/25/2000 |
| 6049118 | Circuit built-in light-receiving element A circuit built-in light-receiving element includes a buried diffusion layer of the second conductivity type, a buried diffusion layer of the first conductivity type, an epitaxial layer of the second conductivity type, a diffusion layer of the first condu... | 04/11/2000 |
| 6034431 | Electronic integrated circuit with optical inputs and outputs A method for designing an integrated circuit having optical inputs and outputs includes the step of selecting an integrated circuit design which includes at least one circuit cell design for processing electric signals. The circuit cell design has a prede... | 03/07/2000 |
| 6033232 | Process of fabricating photodiode integrated with MOS device A method of fabricating a photodiode and at least one MOS device within a first active region and a second active region, respectively, of a substrate is disclosed. First, a gate structure is formed on the substrate within the second active region, and li... | 03/07/2000 |
| 6002142 | Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions Novel semiconductor devices are monolithically defined with p-type and/or n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneo... | 12/14/1999 |
| 6002157 | Semiconductor device having a CMOS current mirror circuit In a photoelectric conversion device driven by a current mirror circuit, the current mirror circuit is constituted by four transistors, e.g., first and second PMOS transistors and first and second NMOS transistors. A photodiode which has a cathode connect... | 12/14/1999 |
| 5994162 | Integrated circuit-compatible photo detector device and fabrication process An integrated circuit-compatible photo detector is disclosed which is particularly compatible with BiCMOS fabrication processes. In a first aspect, the photo detector is formed as a lateral phototransistor having a semiconductor substrate, a base structur... | 11/30/1999 |
| 5990489 | Thin film semiconductor apparatus and production method thereof For decreasing overlap widths between the gate electrode and the source/drain electrode, a photoelectric conversion apparatus is formed through a step of forming a first conductive layer on a substrate and forming a first electrode pattern therefrom, a st... | 11/23/1999 |
| 5990490 | Optical electronic IC capable of photo detection An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and processed by the s... | 11/23/1999 |
| 5987196 | Semiconductor structure having an optical signal path in a substrate and method for forming the same A semiconductor layer is disposed on an opaque substrate, and first and second circuits are respectively disposed in the semiconductor layer or in the substrate. An optical signal path is disposed in the substrate beneath the semiconductor layer and is co... | 11/16/1999 |
| 5977571 | Low loss connecting arrangement for photodiodes Each of a plurality of photodiodes forming a photodetector is mounted on a respective metal pad on the surface of a semiconductor integrated circuit chip including a corresponding number of amplifier circuits for detecting the photocurrent from respective... | 11/02/1999 |
