Class 257/E27.127 - Device controlled by radiation (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E27.122. This
No. of patents: 33
Last issue date: 05/27/2008

Number	Title	Issue Date
7378687	Photothyristor device, bidirectional photothyristor device and electronic apparatus In order to provide a photothyristor having high breakdown voltage and less-varying light sensitivity by improving the sensitivity and the breakdown voltage of the device while maintaining the device small, the device includes a silicon substrate, a transistor porti...	05/27/2008
6665161	Semiconductor circuit having increased susceptibility to ionizing radiation A radiation-susceptible integrated circuit comprises radiation sensor, a differential amplifier and circuit disabler. The radiation sensor includes two devices that have a different tolerance to ionizing radiation. When exposed to a total dose of ionizing...	12/16/2003
6455872	Photo-detector A photo-detector comprises a photo-absorptive region (1) which absorbs individual incident photons to produce corresponding electron-hole pairs. A bias (Vb) applied by an electrode (3) to the region 1 separates the oppositely charged electrons ...	09/24/2002
6380603	Photosensitive device with internal circuitry that includes on the same substrate A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning...	04/30/2002
6316955	Photoelectric conversion integrated circuit device A photoelectric conversion integrated circuit device for converting a light signal into a voltage signal has a photodiode that outputs a current in accordance with a light signal it receives, a current-to-voltage conversion circuit that outputs a voltage ...	11/13/2001
5982011	Photodiode structure augmented with active area photosensitive regions A photodiode structure augmented with active area photosensitive regions is used for detecting impinging radiation. The photodiode includes a semiconductor base layer doped with impurities of a first carrier type, a field oxide layer disposed upon the bas...	11/09/1999
5920091	Method of fabricating highly sensitive photo sensor and structure of the same An improved structure of a photo sensor is disclosed. Its structural feature is that a PIN photo diode is allocated in a MOSFET, by means of enlarging the detected small photo current from PIN photo diode by the MOSFET; so as to avoid the shortcoming of c...	07/06/1999
5905272	Optical receiver Apparatus for optical communications (10, 110, 210) includes a low-temperature grown photoconductor (12, 140, 220) coupled to at least one resonant tunneling device (14, 120, 130, 230, 240). When exposed to an input light, low-temperature grown photocondu...	05/18/1999
5576221	Manufacturing method of semiconductor device To selectively grow a P type silicon layer and a Si/Gex Si1-x superlattice layer under low temperature conditions in the area encircled with a groove, at least the side walls of which consist of silicon oxide film, which is formed in...	11/19/1996
5523557	Optoelectronic device integrating a light guide and a photodetector having two diodes arranged side by side on a semiconductor substrate Optoelectronic device integrating a photodetector having two diodes arranged side by side, constructed from layers of semiconductor material on a substrate that also incorporates a light guide for directing light to the diodes. The two identical, juxtapos...	06/04/1996
5446285	Human body sensing device and method for fabricating the same A human body sensing device capable of sensing not only the presence of the human body, but, also the human body's position. The device includes a lens unit, for dividing a room to be monitored into a plurality of lateral and vertical zones and projecting...	08/29/1995
5410145	Light detector using reverse biased photodiodes with dark current compensation Light intensity detecting circuits using reverse biased photodiodes are disclosed. Two photodiodes are fabricated with essentially the same structure in close enough proximity to each other on a single semiconductor substrate so that they both experience ...	04/25/1995
5404006	High power capacity optical receiver apparatus and method employing distributed photodetectors An optical receiver with an enhanced power capability and wide bandwidth is implemented by distributing a number of photodetectors along an optical transmission channel to convert respective portions of an optical signal into electrical signals. An electr...	04/04/1995
5401953	Optically-switched submillimeter-wave oscillator and radiator having a switch-to-switch propagation delay A submillimeter wave-generating integrated circuit includes an array of N photoconductive switches biased across a common voltage source and an optical path difference from a common optical pulse of repetition rate f0 providing a different opti...	03/28/1995
5389812	Photodetector array having high pixel density Photoconductive semiconductor material is injected into narrow and closely paced cylindrical channels in an insulating matrix plate to form pixel elements of a high resolution photodetector array. A transparent conductive layer is deposited on one surface ...	02/14/1995
5354981	Switching photosensitive matrix device The disclosure describes one unit cell of a PNPN photoswitch array for an image sensor, including a PNPN light-activated thyristor (LAT), in the form of a two-terminal device, and a load FET. The FET functions as a load and as an on-off switch in series. ...	10/11/1994
5328853	Method of making a photodetector array having high pixel density Photoconductive semiconductor material is injected into narrow and closely paced cylindrical channels in an insulating matrix plate to form pixel elements of a high resolution photodetector array. A transparent conductive layer is deposited on one surface ...	07/12/1994
5276349	Semiconductor integrated circuit device A semiconductor integrated circuit device with a built-in photosensor is provided with a light shielding aluminum film which is formed on a whole surface of the semiconductor integrated circuit device continuously to prevent faulty operation of the semico...	01/04/1994
5013904	Integrated photodetector with hysteresis A single-chip integrated photodetector including a photodiode for detecting intensity of light and a photo-device for detecting the intensity of the light, which are connected in series, in which ON- and OFF-levels of the photo-device are determined by tr...	05/07/1991
4961096	Semiconductor image position sensitive device with primary and intermediate electrodes In a semiconductor image position sensitive device having a photoconductive layer and a resistive layer thereon, an image position sensitive region is divided into a plurality of sections and an output electrode is provided on each boundary between the se...	10/02/1990
4948741	Polysilicon photoconductor for integrated circuits A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The dep...	08/14/1990
4920394	Photo-sensing device with S-shaped response curve When a photocurrent is detected by irradiating a main light reflected on a manuscript and a biasing light, on a photo-sensing device, the material of the photo-sensing device of the present invention has a response characteristic of a photocurrent to time...	04/24/1990
4916505	Composite unipolar-bipolar semiconductor devices A composite unipolar-bipolar semiconductor device in which a sourceless field-effect transistor structure is fabricated upon the outer face of one member of a junction diode structure. In some embodiments the gate portion of the sourceless field-effect tr...	04/10/1990
4916502	Semiconductor device to be coupled with a control circuit by a photocoupler A multilayer substrate (18) has two ceramic plates (111, 114) and a shielding metal layer (113) provided between the ceramic plates. An electronic circuit having a TRIAC (7) and a photocoupler (5) is provided on the multilayer substrate. The shielding met...	04/10/1990
4884119	Integrated multiple quantum well photonic and electronic devices In an optoelectronic integrated circuit, an electronic device is integrated with an optical device by fabricating the electronic device directly in a doped semiconductor layer of the optical device. The optical devices contemplated for use include at leas...	11/28/1989
4821091	Polysilicon photoconductor for integrated circuits A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The dep...	04/11/1989
4549782	Active optical fiber tap An active tap for use in an optical multiple access network is disclosed. The tap comprises a semiconductor substrate on which the electronics associated with an active parallel path are fully integrated. These include optical detectors, amplifiers and li...	10/29/1985
4514755	Solid-state color imager with two layer three story structure A solid-state color imager comprised of a solid-state base comprised of a plurality of electrical switching elements said base further including photosensitive elements associated with some of the switching elements arranged in sets having superimposed th...	04/30/1985
4482881	Thick extended contact photoconductor A semiconductor photoconductor having low impedance nonmetallic contacts is disclosed which has increased detectivity over prior art photoconductor structures. The improved photoconductor has metallic contacts that are separated by a contact length that i...	11/13/1984
4446364	Photoelectric converter on a transmissive substrate having light shielding In a contact type photoelectric converter device suited for use in facsimile transmitters and character readers, a light transmitting section for transmitting light emitted from a light source is juxtaposed in the vicinity of a row of photoconductive film...	05/01/1984
4443813	Solid-state color imager with two layer three story structure A solid-state color imager comprised of a solid-state base comprised of a plurality of electrical switching elements said base further including photosensitive elements associated with some of the switching elements arranged in sets having superimposed th...	04/17/1984
4438455	Solid-state color imager with three layer four story structure A solid-state color imager comprised of a solid-state base comprised of a plurality of electrical switching elements arranged in sets of three having superimposed thereon a plurality of photosensor layers which can detect and absorb different colors of li...	03/20/1984
3949223	Monolithic photoconductive detector array A photoconductive detector array is formed in a single body of semiconductor material. The individual photoconductive detectors are formed by regions of first conductivity type. The bulk of the semiconductor body is of a second conductivity type, thereby ...	04/06/1976

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Class 257/E27.127 - Device controlled by radiation (EPO)