Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 7397072 | Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited... | 07/08/2008 |
| 7344930 | Semiconductor device and manufacturing method thereof To obtain a semiconductor device containing TFTs of different, suitable properties as display pixel TFTs and high-voltage, driver-circuit TFTs, the semiconductor device of the present invention includes: first and second islands-shaped polycrystalline silicon (p-Si)... | 03/18/2008 |
| 7338835 | OFETs with active channels formed of densified layers The present invention provides apparatus and a method of fabricating the apparatus. The apparatus includes a substrate having a surface and an organic field-effect transistor (OFET) located adjacent the surface of the substrate. The OFET comprising a gate, a channel... | 03/04/2008 |
| 7332774 | Multiple-gate MOS transistor and a method of manufacturing the same Provided is a multiple-gate metal oxide semiconductor (MOS) transistor and a method for manufacturing the same, in which a channel is implemented in a streamline shape, an expansion region is implemented in a gradually increased form, and source and drain regions is... | 02/19/2008 |
| 7307281 | Method of manufacturing substrate, method of manufacturing organic electroluminescent display device using the method, and organic electroluminescent display device A method of manufacturing an organic electroluminescent display device includes preparing an auxiliary substrate, which has a flat side; forming a first protective layer on the auxiliary substrate; forming an organic electroluminescent unit on the first protective l... | 12/11/2007 |
| 7282735 | TFT having a fluorocarbon-containing layer A thin film transistor composed of: (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages; (... | 10/16/2007 |
| 7276727 | Electronic devices containing organic semiconductor materials An electronic device includes first and second electrical contacts electrically coupled to a semiconductor polymer film, which includes mono-substituted diphenylhydrazone. ... | 10/02/2007 |
| 7271017 | Organic electroluminescent display device and fabricating method thereof An electroluminescent display device includes first and second substrates facing each other, data and gate lines crossing each other on the first substrate to define a plurality of pixel regions, a switching transistor connected to the gate and data lines, a driving... | 09/18/2007 |
| 7223628 | High temperature attachment of organic molecules to substrates This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-bas... | 05/29/2007 |
| 7166859 | Organic semiconductor transistor element, semiconductor device using the same, and process for producing the semiconductor device The present invention provides an organic semiconductor transistor element that includes at least a source electrode, a drain electrode, an organic semiconductor formed to be electrically conductive to the source electrode and the drain electrode, and a gate electro... | 01/23/2007 |
| 7138652 | Electroluminescent devices and displays with integrally fabricated address and logic devices fabricated by printing or weaving Improved electroluminescent and photonic devices with integrated logic and control circuits are disclosed. Low mobility, contact barrier, space charge limitation and carrier balancing are provided solutions that increase efficiency, reliability and longevity of the ... | 11/21/2006 |
| 6657884 | High density non-volatile memory device This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault toler... | 12/02/2003 |
