Class 257/E27.088 - With capacitor higher than bit line level (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 47
Last issue date: 10/21/2008

«First «Previous1 2 Next»Last»

Number	Title	Issue Date
7439569	Semiconductor device manufacturing method and semiconductor device A technique is provided which makes it possible to achieve both of a reduction in contact resistance in a memory device and a reduction in contact resistance in a logic device even when oxidation is performed during formation of dielectric films of capacitors. Condu...	10/21/2008
7413950	Methods of forming capacitors having storage electrodes including cylindrical conductive patterns A capacitor is provided including a storage node contact pad and a storage electrode. The storage electrode includes at least two cylindrical conductive patterns. The at least two cylindrical conductive patterns are electrically coupled to a portion of a surface of ...	08/19/2008
7345333	Double sided container process used during the manufacture of a semiconductor device A method used during the formation of a semiconductor device comprises providing a wafer substrate assembly comprising a plurality of digit line plug contact pads and capacitor storage cell contact pads which contact a semiconductor wafer. A dielectric layer is prov...	03/18/2008
7332395	Method of manufacturing a capacitor A method of manufacturing a stack capacitance type capacitor is provided, which prevents the problem that the capacitor cannot be formed because a lower electrode collapses with the external wall thereof exposed in forming the lower electrode of the capacitor in a d...	02/19/2008
7329918	Semiconductor memory device including storage nodes and resistors and method of manufacturing the same A semiconductor memory device according to embodiments of the invention includes storage nodes and resistors. A method of manufacturing the semiconductor memory device according to some embodiments of the invention includes forming an interlayer insulation layer on ...	02/12/2008
7304341	Semiconductor device and method for fabricating the same A semiconductor device comprises: an insulating film formed over a semiconductor substrate and having a first recess; a plurality of capacitor elements each of which is composed of a capacitor lower electrode formed on wall and bottom portions of the first recess an...	12/04/2007
7288806	DRAM arrays The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering storage node contact locations while leaving openings to bitline contact...	10/30/2007
7187027	Stacked capacitor-type semiconductor storage device and manufacturing method thereof First and second wirings are formed on a first insulating film. Each of the wirings is arranged so that a conductive film, a silicon oxide film and a silicon nitride film are laminated. Thereafter, a silicon oxide insulating film is formed on the whole surface. The ...	03/06/2007
7176552	Semiconductor memory device having a decoupling capacitor A semiconductor memory device comprises a cell capacitor having a first buried contact connected with a semiconductor substrate of a cell region and a first storage node connected with the first buried contact, and a decoupling capacitor for reducing a coupling nois...	02/13/2007
7145193	Semiconductor integrated circuit device and process for manufacturing the same In a peripheral circuit region of a DRAM, two connection holes, for connecting a first layer line and a second layer line electrically are opened separately in two processes. After forming the connection holes, plugs are formed in the respective connection holes.	12/05/2006
7045846	Memory device and method for fabricating the same Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a...	05/16/2006
6703657	DRAM cell having electrode with protection layer A DRAM cell is provided, along with a method for fabricating such a DRAM cell. A protection layer pattern is formed to cover a common drain region of first and second access transistors. Storage node holes are then formed to expose each source region of t...	03/09/2004
6696713	Semiconductor memory provided with vertical transistor and method of manufacturing the same There is proposed a vertical cell transfer transistor comprising a channel region constituted by a monocrystalline silicon layer which is formed by way of epitaxial growth, source-drain regions constituted by n-type diffusion regions which are formed over...	02/24/2004
6693792	Semiconductor integrated circuits and fabricating method thereof A capacitor having an equivalent thickness of 3.0 nm or less, with a sufficient static capacitance and less leakage current in a reduced size, constituted by stacking an interfacial film 21 having a physical thickness of 2.5 nm or more for suppressing tun...	02/17/2004
6693002	Semiconductor device and its manufacture A semiconductor device having: a substrate having a first area and a second area surrounding the first area; an insulating film formed in the second area; electrodes formed above the surface of the substrate in the first area; dielectric films formed abov...	02/17/2004
6690050	Semiconductor device and its manufacture In a logic area, impurities are doped into the gate electrode and the source/drain diffusion regions of a MIS transistor. Thereafter in a memory cell area, word lines are patterned, source/drain regions are formed, and contact holes are formed. Side wall ...	02/10/2004
6690054	Capacitor A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric...	02/10/2004
6690052	Semiconductor device having a capacitor with a multi-layer dielectric A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of...	02/10/2004
6680502	Buried digit spacer separated capacitor array The present invention relates to the field of semiconductor integrated circuits and, in particular, to capacitor arrays formed over the bit line of an integrated circuit substrate. The present invention provides a method for forming stacked capacitors, in...	01/20/2004
6673689	Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same A high surface area capacitor comprising a double metal layer of an electrode metal and a barrier material deposited on hemispherical grain (HSG) silicon and a high dielectric constant (HDC) material deposited over the double metal layer. An upper cell pl...	01/06/2004
6661048	Semiconductor memory device having self-aligned wiring conductor According to the present invention, an overlay margin is secured for matching a wiring electrode 11 with a storage electrode 15 of a capacitor at their point of contact and the required area for a memory cell can be decreased by placing the plug electrode...	12/09/2003
6656790	Method for manufacturing a semiconductor device including storage nodes of capacitor A semiconductor device including storage nodes of a capacitor and a method for manufacturing the same are provided. Bit lines are formed on a semiconductor substrate, and protection layers are formed to cover and protect the bit lines. Conductive contact ...	12/02/2003
6656786	MIM process for logic-based embedded RAM having front end manufacturing operation A method and system for manufacturing an MIM capacitor for utilization with a logic-based embedded DRAM device. At least one transistor, an interlayer dielectric, at least one contact and at least one metal one layer are generally formed on a substrate du...	12/02/2003
6653690	Semiconductor device comprising high density integrated circuit having a large number of insulated gate field effect transistors It is a purpose of the invention to provide a semiconductor device comprising a high density integrated circuit having a large number of insulated gate field effect transistors having minute size and improved performance and uniformity. The source contact...	11/25/2003
6649465	Process for manufacturing a semiconductor memory device including a memory cell selecting transistor and a capacitor with metal electrodes A technique is provided which is capable of forming a Ru film constituting a lower electrode of an information storing capacitive element in an aperture with high precision. After a Ru film is deposited, heat treatment is performed in a reducing atmospher...	11/18/2003
6642101	Semiconductor memory device and method of producing same A semiconductor memory device having a high quality storage node electrode preventing for example connection failure between a contact plug and the storage node electrode, including first insulating films formed on a substrate, storage node contact holes ...	11/04/2003
6639263	Semiconductor device with copper wiring connected to storage capacitor It is an object of the present invention to provide a high-reliability semiconductor device having a storage capacitor and wiring using copper for a main conductive film. Under the above object, the present invention provides a semiconductor device compri...	10/28/2003
6638811	Method of manufacturing a semiconductor integrated circuit device having a capacitor In a DRAM having a capacitor-over-bitline structure in which the capacitive insulating film of an information storing capacitive element C is formed of a high dielectric material such as Ta2 O5 (tantalum oxide) film 46, the portions ...	10/28/2003
6632744	Manufacturing method of semiconductor integrated circuit device Densely disposed patterns constituting a semiconductor integrated circuit device are divided into a first mask pattern and a second mask pattern 28B such that a phase shifter S can be disposed, and a predetermined pattern is transferred on a semiconductor...	10/14/2003
6633062	Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof A semiconductor device for use in a memory cell includes an active matrix an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transis...	10/14/2003
6630705	Semiconductor device with capacitor electrodes A semiconductor device and a method of manufacturing thereof can be gained wherein the occurrence of defects can be prevented and it is possible to reduce the manufacturing cost. The semiconductor device includes a capacitor electrode, an insulating layer...	10/07/2003
6627931	Ferroelectric memory cell and corresponding manufacturing method Presented is a memory cell integrated in a semiconductor substrate that includes a MOS device connected in series to a capacitive element. The MOS device has first and second conduction terminals, and the capacitive element has a lower electrode covered w...	09/30/2003
6627941	Capacitor for semiconductor device and method for manufacturing the same A capacitor for a semiconductor device is disclosed with increased capacitance which is produced by a simplified manufacturing process. The capacitor has a storage node electrode structure formed on the semiconductor device having impurity regions formed ...	09/30/2003
6627497	Semiconductor integrated circuit device and method of manufacturing the same A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage capacitor C that is connected in series to said memory cell...	09/30/2003
6624525	Contact plug in capacitor device A semiconductor device comprises a first insulating film formed over a semiconductor substrate, a second insulating film formed on the first insulating film, a contact plug made of a conductive material vertically penetrating the first and second insulati...	09/23/2003
6624461	Memory device The invention relates to a memory device comprising numerous memory cells, each cell comprising at least one selection transistor and one stacked capacitor and driven via word and bit lines. This memory device comprises two metallized sheets through which...	09/23/2003
6621110	Semiconductor intergrated circuit device and a method of manufacture thereof A DRAM of an open bit line structure has a cell area smaller than that of a DRAM of a folded bit line structure and is susceptible to noise. A conventional DRAM of an open bit line structure has a large bit line capacitance and is susceptible to noise or ...	09/16/2003
6620685	Method for fabricating of semiconductor memory device having a metal plug or a landing pad Method of fabricating a semiconductor memory device includes the steps of: forming a gate electrode on a silicon substrate; forming a first inter-layer dielectric layer (ILD1) on the silicon substrate; forming a cell pad poly between the gate electrodes i...	09/16/2003
6617631	Method for making closely spaced capacitors with reduced parasitic capacitance on a dynamic random access memory (DRAM) device A method for making DRAM devices having reduced parasitic capacitance between closely spaced capacitors is achieved. After forming FETs for the memory cells and bit lines having bit-line contacts, a planar insulating layer is formed having an etch-stop la...	09/09/2003
6617248	Method for forming a ruthenium metal layer A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the presence of a hydrogen-rich gas to react the oxygen in the ruth...	09/09/2003

«First «Previous1 2 Next»Last»

PatentStorm

Did You Know...

PatentStorm News

Class 257/E27.088 - With capacitor higher than bit line level (EPO)