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| Number | Title | Issue Date |
| 7157754 | Solid-state imaging device and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor... | 01/02/2007 |
| 7105876 | Reticulated gate CCD pixel with diagonal strapping A sensor includes an array of pixels organized in rows and columns and a plurality of metal busses overlaying the array of pixels. A first column of pixels includes a proximal set of first pixels and a distal set of first pixels separated by a first jog region. A se... | 09/12/2006 |
| 7101738 | Gate dielectric antifuse circuit to protect a high-voltage transistor According to embodiments of the present invention, circuits have elements to protect a high-voltage transistor in a gate dielectric antifuse circuit. An antifuse has a layer of gate dielectric between a first terminal coupled to receive an elevated voltage and a sec... | 09/05/2006 |
| 5489545 | Method of manufacturing an integrated circuit having a charge coupled device and a MOS transistor An integrated circuit comprises a charge coupled device and an MOS transistor. The charge coupled device has a lower and an upper gate electrode on the substrate. The insulating film between the substrate and the electrodes comprises silicon nitride. The ... | 02/06/1996 |
| 5369293 | Charge-coupled device having reduced cross-talk A charge-coupled device has a series register (A) having charge storage electrodes (3a) for defining charge storage wells and charge transfer electrodes (3b) for transporting charge between the charge storage wells and a parallel section (C) having channe... | 11/29/1994 |
| 5321282 | Integrated circuit having a charge coupled device and MOS transistor and method for manufacturing thereof An integrated circuit comprises a charge coupled device and an MOS transistor. The charge coupled device has a lower and an upper gate electrode on the substrate. The insulating film between the substrate and the electrodes comprises silicon nitride. The ... | 06/14/1994 |
| 5288651 | Method of making semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD A semiconductor integrated circuit device includes bipolar transistors, MOS FETs and a CCD in and on only one semiconductor substrate. At least emitter electrode wiring layers of bipolar transistors and one group of transfer electrode wiring layers of the... | 02/22/1994 |
| 5260228 | Method of making a semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors A semiconductor device having a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on a major surface of the semiconductor substrate, an isolation layer of the first conductivity type formed in th... | 11/09/1993 |
| 5220190 | Device having a charge transfer device, MOSFETs, and bipolar transistors--a l A semiconductor device according to the present invention has a semiconductor body of a first conductivity type, three islands of a second conductivity type, formed in the surface of the semiconductor body. Two wells of the first conductivity are formed i... | 06/15/1993 |
| 5198880 | Semiconductor integrated circuit and method of making the same For providing a semiconductor integrated circuit device including CCD type, bipolar type and MOS type integrated circuits in only one chip, island-shaped epitaxial layers of opposite conductivity type are disposed in a semiconductor substrate of one condu... | 03/30/1993 |
| 5189499 | Charge-coupled device and process of fabrication thereof A charge-coupled device has a multi-layer structure insulating layer is formed beneath a transfer electrode, floating electrodes and an electrode adjacent the floating electrodes so that pin hole phenomenon in a charge transfer section of the charge coupl... | 02/23/1993 |
| 5184203 | Semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors--all formed in a single semiconductor substrate A semiconductor device having a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on a major surface of the semiconductor subtrate, an isolation layer of the first conductivity type formed in the... | 02/02/1993 |
| 5029189 | Input structure for charge coupled devices with controllable input bias A charge coupled device employs peak hold circuits for detecting electric charges transferred through reference registers for facilitating automatic iput bias control. The peak hold circuits are respectively connected to a pair of reference registers whic... | 07/02/1991 |
| 5015876 | High speed charge-coupled sampler and rate reduction circuit A high speed charge-coupled sampler and rate reduction circuit is disclosed. The present invention allows measurement of high frequency input signals while reducing actual data rates for a series of accurately interleaved sampler data streams. The charge-... | 05/14/1991 |
| 4994888 | Monolithic semiconductor device having CCD, bipolar and MOS structures A semiconductor device comprising a semiconductor chip formed of a substrate of a first conductivity type and an epitaxial layer of the first conductivity type formed on the substrate, a charge transfer device section formed in the epitaxial layer and dri... | 02/19/1991 |
| 4903097 | CCD read only memory The specification describes a high capacity nonvolatile CCD read only memory system that includes a plurality of memory cells. Selected ones of the memory cells include a double-diffused region having a first and second implant or diffusion under a clocke... | 02/20/1990 |
| 4881250 | Compact charge-coupled device having a conductive shielding layer A charge-coupled device has a semiconductor body defining a charge transfer channel. Charge storage and charge transfer electrodes are provided for, respectively, defining charge wells within the charge transfer channel and transferring charge between cha... | 11/14/1989 |
| 4807005 | Semiconductor device The present invention involves a semiconductor device, such as a shift register, wherein information in the form of charge carriers is moved laterally through the bulk of a semiconductor layer by means of an electric field, while the charge carriers are s... | 02/21/1989 |
| 4760558 | Analog image memory device using charge transfer An analog image memory device using charge transfer and comprising: a memory zone of N lines of M memory points, each memory point being formed by the integration on the same semiconductor substrate of an MIS capacity separated from a diode by a screen grid, m... | 07/26/1988 |
| 4691218 | Charge transfer device A charge transfer device has a charge transfer channel and at least one second storage site situated outside this channel, whereby a connection channel for transferring charge packets is present between a first storage site situated in the charge transfer... | 09/01/1987 |
| 4688066 | Opposite direction multiple-phase clocking in adjacent CCD shift registers Parallelled charge transfer channels have multiple-phase-clocked gate electrodes overspanning them in one of a number of arrangements conditioning the transfer of charge packets in opposing directions in adjacent charge transfer channels. Three-phase, fou... | 08/18/1987 |
| 4668971 | CCD imager with JFET peripherals A CCD imager wherein a mixed MOSFET and JFET periphery is provided using the same device doping profiles as are used for fabrication of the CCD structure. This provides simple fabrication of low-noise amplifiers integrated with the CCD array. Preferably t... | 05/26/1987 |
| 4669100 | Charge-coupled device having a buffer electrode A series-parallel-series memory or other parallel-to-series CCD has charge-signals interlaced in alternate parallel channels 1a and 1b, and de-interlacing electrodes (19, 20, 21, 22) at the parallel-to-series transition. In order to avoid delay effects as... | 05/26/1987 |
| 4667213 | Charge-coupled device channel structure A buried-channel charge-coupled device includes a substrate of semiconductor material of one conductivity type having therein and along a surface thereof a major channel region of the opposite conductivity type and at least one supplemental channel region... | 05/19/1987 |
| 4665420 | Edge passivated charge-coupled device image sensor A charge-coupled device (CCD) image sensor includes in a substrate of single crystalline silicon of one conductivity type an array of a plurality of spaced, parallel channel regions of the opposite conductivity type extending along one major surface of th... | 05/12/1987 |
| 4628347 | Charge transfer device for multiplexing signals The present invention relates to a charge transfer device for multiplexing signals and eliminates an output circuit and level adjusting circuit necessary for multiplexing signals in the prior art. There are provided at least two first and second transfer ... | 12/09/1986 |
| 4625322 | Charge coupled device provided with automatic bias-voltage setting means A bias voltage setting circuit for a main charge coupled device is disclosed in which first and second auxiliary charge coupled devices are formed on a semiconductor substrate together with the main charge coupled device, a reference voltage is generated ... | 11/25/1986 |
| 4592130 | Method of fabricating a CCD read only memory utilizing dual-level junction formation The specification describes a high capacity nonvolatile CCD read only memory system that includes a plurality of memory cells. Selected ones of the memory cells include a double-diffused region having a first and second implant or diffusion under a clocke... | 06/03/1986 |
| 4586010 | Charge splitting sampler systems Methods and apparatus for high speed signal sampling and recording utilizing mutual repulsion field-induced splitting of charge carriers in a charge transfer channel.... | 04/29/1986 |
| 4574295 | Charge coupled device having meandering channels A charge coupled device transfers a charge via a meandering route in a channel having at least one bend. The selected channel bending angle has a maximum of two right angles, or 180°. When the channel bending angle is less than 180°, the channel may be ... | 03/04/1986 |
| 4562452 | Charge coupled device having meandering channels A charge coupled device transfers a charge via a meandering route in a channel having at least one bend. The selected channel bending angle has a maximum of two right angles, or 180°. When the channel bending angle is less than 180°, the channel may be ... | 12/31/1985 |
| 4504930 | Charge-coupled device The invention relates to a charge-coupled SPS memory comprising a series input register, a parallel section and a series output register. In order to increase the retention time leakage current drain regions are provided beside the memory. Since the charg... | 03/12/1985 |
| 4493060 | Serial-parallel-serial charged coupled device memory and a method of transferring charge therein An SPS CCD memory using two phase clocking in the serial registers and ripple clocking in the parallel registers with interlacing transfer of charge in the parallel registers to the output serial registers. First alternate parallel registers are coupled t... | 01/08/1985 |
| 4468727 | Integrated cellular array parallel processor A monolithic integrated circuit is provided in which signals from concurrently operating information sources are each provided to a corresponding signal processing cell in an array thereof. These cells can each communicate directly with surrounding neares... | 08/28/1984 |
| 4468684 | High-density charge-coupled devices with complementary adjacent channels A CCD includes several juxtaposed channels for hole transport and electron transport. Each channel forms a lateral boundary for an adjacent complementary channel so that high density in combination with a simple structure can be obtained. The CCD channels... | 08/28/1984 |
| 4450464 | Solid state area imaging apparatus having a charge transfer arrangement A solid state area imaging apparatus having a photosensor matrix array disposed at a front surface area of a substrate and having a charge transfer arrangement for transferring charges generated in the photosensors of the matrix so as to convert them into... | 05/22/1984 |
| 4449224 | Dynamic merged load logic (MLL) and merged load memory (MLM) MOS dynamic logic/shift registers employing as load elements either a parasitic bipolar transistor whose emitter is the drain of the MOS element, or the drain-substrate diode charged via bi-polar signals on the clock lines capacitively coupled to the drai... | 05/15/1984 |
| 4446485 | Semiconductor circuit with clock-controlled charge displacement devices Semiconductor circuit including at least two clock-controlled charge-displacement devices respectively having a multiplicity of storage cells with respective information content, each of the storage cells of a first one of the charge-displacement devices ... | 05/01/1984 |
| 4412344 | Integrated rectifier circuit An integrated rectifier circuit has a doped semiconductor body having first and second oppositely doped regions therein and is covered by an electrically insulating layer on which a first pair of input gate electrodes are disposed which are associated wit... | 10/25/1983 |
| 4393357 | High speed transient recorder systems CCD methods and devices for recording transient data signals, in which charge is transferred under the influence of transmission line fields at sampling sites disposed along a charge transfer channel.... | 07/12/1983 |
