Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7199410 | Pixel structure with improved charge transfer An active pixel is described comprising a semiconductor substrate and a radiation sensitive source of carriers in the substrate, such as for instance, a photodiode. A non-carrier storing, carrier collecting region in the substrate is provided for attracting carriers... | 04/03/2007 |
| 7157754 | Solid-state imaging device and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor... | 01/02/2007 |
| 7132702 | Image sensor In the present invention, a charge transfer unit is arranged on a first-plane side of a thinly-formed semiconductor base. Charge accumulating units are arranged on a second-plane side, the opposite side. A depletion prevention layer is arranged closer to the second-... | 11/07/2006 |
| 4402014 | Circuit arrangement for discharging a capacity MOS switch is provided, in particular for a camera, with which within the line flyback time the whole optically generated signal can be transferred by periodically transferring back a fixed quantity of charge from the drain to the source.... | 08/30/1983 |
| 4358890 | Process for making a dual implanted drain extension for bucket brigade device tetrode structure The invention is the structure and process for making a bucket brigade device which comprises the merger of an MOS capacitor with an MOSFET device to form the charge transfer cell. A first thin N-type region is implanted at a first concentration in a port... | 11/16/1982 |
| 4254345 | Output circuit for bucket-brigade devices To reduce the D.C drift of bucket-brigade devices having common output circuits (emitter follower), an output circuit is provided having an additional transistor and an additional capacitor. The terminal on the gate side of the capacitor associated with t... | 03/03/1981 |
| 4250517 | Charge transfer, tetrode bucket-brigade device An improved BBD structure is disclosed which is realized with MOS, two layer, polysilicon technology. In the tetrode structure, the transfer gate overlaps the tetrode gate with no intermediate substrate region. The storage capacitor is off-set from the pr... | 02/10/1981 |
| 4171229 | Improved process to form bucket brigade device The invention is the structure and process for making a bucket brigade device which comprises the merger of an MOS capacitor with an MOSFET device to form the charge transfer cell. A thin n-type region is implanted in a portion of the p-type channel regio... | 10/16/1979 |
| 4157558 | Bucket-brigade charge transfer means for filters and other applications An MOS bucket-brigade device (BBD) fabricated with two layers of polycrystalline silicon is disclosed. Each stage includes a pair of spaced-apart regions, one of which is formed in a well. A holding stage is employed which includes a lightly doped substra... | 06/05/1979 |
| 4156233 | Charge transfer circuit with leakage current compensating means A monolithic analog to digital converter having leakage current compensating circuitry is disclosed. First and second charge storage capacitors are formed in a single semi-conductor substrate. An analog signal to be converted and a reference signal are si... | 05/22/1979 |
| 4156152 | Charge transfer circuit with leakage current compensating means A charge transfer circuit of the type including first and second charge storage locations and a charge transfer transistor for transferring a plurality of discrete packets of charge from the first to the second charge storage location is disclosed. The ch... | 05/22/1979 |
| 4151539 | Junction-storage JFET bucket-brigade structure The novel structure disclosed comprises an n-type epitaxial layer on a p- type substrate with p+ type top gates diffused into the epi-layer and p+ buried gates aligned with the source side of the top gates. The top-gate di... | 04/24/1979 |
| 4142199 | Bucket brigade device and process The invention is the structure and process for making a bucket brigade device which comprises the merger of an MOS capacitor with an MOSFET device to form the charge transfer cell. A thin n-type region is implanted in a portion of the p-type channel regio... | 02/27/1979 |
| 4107550 | Bucket brigade circuits The underlying concept of the invention disclosed is the use of charge partitioning for providing a precision weighted tap in a bucket brigade circuit. At the drain node of a charge conducting element in a bucket brigade device, the signal path is split i... | 08/15/1978 |
| 4100513 | Semiconductor filtering apparatus A semiconductor filtering apparatus substantially fabricated as a metal-oxide-semiconductor (MOS) integrated circuit that permits discrete time correlation or convolution of an analog input signal with a binary or analog correlating signal. The apparatus ... | 07/11/1978 |
| 4045810 | Bucket-brigade delay line having reduced parasitic capacitances An MOS bucket brigade delay line having reduced parasitic capacitances include a first set of diffused drain source regions in a semiconductor substrate, a thin gate oxide layer overlying said diffused regions, a plurality of gate electrodes having first ... | 08/30/1977 |
| 4002513 | Bucket-brigade delay line having reduced parasitic capacitances and method for making the same An MOS bucket brigade delay line having reduced parasitic capacitances and method for making the same, include a first set of diffused drain source regions in a semiconductor substrate, a thin gate oxide layer overlying said diffused regions, a plurality ... | 01/11/1977 |
| 4001862 | Charge transfer device Variable capacitance bucket brigade memory in which variable capacitances are used instead of fixed capacitances in order to reduce the Signal-Step-Response-Error.... | 01/04/1977 |
| 3986176 | Charge transfer memories Charge transfer memories such as those of the bucket-brigade or of the charge-coupled device (CCD) type include, at each location, a store which is separate from the normal means for charge storage. Charge is transferred from the normal means of storage t... | 10/12/1976 |
| 3946248 | Dispersion compensated circuitry for analog charged systems Circuitry for compensating for charge transfer inefficiency related dispersion in analog charge transfer devices (CTD's) is disclosed. In one aspect of the invention the tap weights of a filter are modified in a preselected manner to provide dispersion co... | 03/23/1976 |
