Class 257/E27.069 - PN junction gate field-effect transistor

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 33
Last issue date: 09/02/2008

Number	Title	Issue Date
7420232	Lateral junction field effect transistor and method of manufacturing the same A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more hea...	09/02/2008
6690040	Vertical replacement-gate junction field-effect transistor A vertical JFET architecture. Generally, an integrated circuit structure includes a semiconductor area with a major surface formed along a plane and a first source/drain doped region formed in the surface. A second doped region forming a channel of differ...	02/10/2004
6633195	Hybrid power MOSFET A hybrid power MOSFET, comprising a MOSFET and a junction FET, the MOSFET and the junction FET being electrically connected in series is disclosed. In accordance with the present invention, the hybrid power MOSFET is provided with a device for reducing th...	10/14/2003
6614289	Starter device for normally off FETs A semiconductor switching device or amplifier combined in parallel with one or more active devices defined as starter devices. A starter device is used to reduce the terminal voltage of a switching device or amplifier to a dc level below about 0.4 volts w...	09/02/2003
6522012	Semiconductor device with HIHG resistivity The present invention is a semiconductor device, which is able to provide a desired output voltage of an ECM without signal loss caused by parasitic capacitances. Such a semiconductor device comprises a semiconductor substrate; integrated network elements...	02/18/2003
6503782	Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors A method and device produced for design, construction, and use of integrated circuits in wide bandgap semiconductors, including methods for fabrication of n-channel and p-channel junction field effect transistors on a single wafer or die, such that the pr...	01/07/2003
6392307	Semiconductor device The present invention is a semiconductor device, which is able to provide a desired output voltage of an ECM without signal loss caused by parasitic capacitances. Such a semiconductor device comprises a semiconductor substrate; integrated network elements...	05/21/2002
6307223	Complementary junction field effect transistors Junction Field Effect Transistor (JFET) offers fast switching speed than bipolar transistor since JFET is a majority carrier device. This invention comprises two normally "off" JFETs, one in N-channel and one in P-channel to form Complementary Junction Fi...	10/23/2001
6166404	Semiconductor device in which at least two field effect transistors having different threshold voltages are formed on a common base A semiconductor device including field effect transistors having different threshold voltages formed on a common base, characterized by including: a first field effect transistor having a p-n junction gate; and a second field effect transistor having a Sc...	12/26/2000
5411901	Method of making high voltage transistor In a method for constructing a semiconducting device, within a substrate of a first conductivity type there is formed a well of second conductivity type. Within the well, an extended drain region of a first conductivity type is formed. An insulating regio...	05/02/1995
5338949	Semiconductor device having series-connected junction field effect transistors A JFET configuration is obtained whose pinch-off voltage can be set by means of mask dimensions, without process changes, and which is at the same time suitable for operation at very low and very high voltages by cascoding of a first JFET with a diffused ...	08/16/1994
5274259	High voltage transistor In a method for constructing a semiconducting device, within a substrate of a first conductivity type there is formed a well of second conductivity type. Within the well, an extended drain region of a first conductivity type is formed. An insulating regio...	12/28/1993
5122851	Trench JFET integrated circuit elements A method and construction are disclosed to form a trench gate JFET transistor. The invention comprises forming a first trench in a semiconductor substrate, forming a gate channel about the trench and forming a conductive layer upon the surface of the gate...	06/16/1992
5010025	Method of making trench JFET integrated circuit elements A method and construction are disclosed to form a trench gate JFET transistor. The invention comprises forming a first trench in a semiconductor substrate, forming a gate channel about the trench and forming a conductive layer upon the surface of the gate...	04/23/1991
4920400	Semiconductor device A semiconductor device comprising a pair of p-type regions facing each other, a pair of n-type regions facing each other, and a nearly intrinsic region connecting these regions, thereby establishing a hole current path connecting the p-type regions and an...	04/24/1990
4807011	Semiconductor integrated circuit incorporating SITS A semiconductor integrated circuit comprising a plurality of vertical static induction transistors (SITs) of normally-off type formed in a common semiconductor substrate in such a manner that the lateral dimension of the channel region of the SITs employe...	02/21/1989
4800172	Manufacturing method for cascaded junction field effect transistor A method for manufacturing cascaded junction type field effect transistors comprises the steps of forming an epitaxial layer of a first conductivity type used as a channel region on a semiconductor substrate of a second conductivity type and performing se...	01/24/1989
4338618	Composite static induction transistor and integrated circuit utilizing same A composite junction-gate static induction transistor comprising a main static induction transistor (SIT) having a source, a gate and a drain, and an auxiliary static induction transistor having an auxiliary source connected to the source of the main SIT,...	07/06/1982
4329700	Semi-conductor inverter using complementary junction field effect transistor pair A semiconductor inverter comprised of a pair of junction field effect transistors. A first of the junction field effect transistors is a lateral transistor, and a second of the junction field effect transistors is a vertical transistor. The two junction f...	05/11/1982
4270059	Static induction transistor logic circuit A static induction transistor logic circuit comprising: an injector transistor having a control electrode held at a reference potential, a first electrode, and a second electrode applied with a potential to thereby cause a current having a value determine...	05/26/1981
4259681	Integrated circuit An integrated circuit comprising an inversely operated static induction transistor capable of performing very high speed operation at low power dissipation. In an integrated injection logic circuit, at least one of the injection and the output transistor ...	03/31/1981
4205334	Integrated semiconductor device An integrated semiconductor device including at least one first vertical-type junction field effect transistor (vertical JFET) having a triode-like unsaturated voltage-current characteristic and at least one second vertical JFET having a bipolar-transisto...	05/27/1980
4198648	Integrated semiconductor device An integrated semiconductor device comprising: a first and a second static induction transistor each including a drain and a source, each having a first conductivity type, a current channel having the first conductivity type and located between the drain ...	04/15/1980
4175240	Integrated logic circuit with a current source made as a field-effect transistor The integrated logic circuit of the invention comprises a switching field-effect transistor and a current source, which is another field-effect transistor having its conductivity complementary to that of the switching field-effect transistor. The second f...	11/20/1979
4170818	Barrier height voltage reference A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The r...	10/16/1979
4117587	Negative-resistance semiconductor device A pair of field-effect transistors (hereinafter referred to as FETs) of p-channel type and n-channel type, respectively, both to be electrically actuated in a depletion mode, are formed on a single semiconductor substrate, for instance, a single silicon s...	10/03/1978
4107725	Compound field effect transistor A horizontal junction-type field effect transistor having a saturated drain current to drain voltage characteristic and constituting an input transistor and a vertical junction-type field effect transistor having an unsaturated drain current to drain volt...	08/15/1978
4089021	Semiconductor device capable of withstanding high voltage and method of manufacturing same A semiconductor device capable of withstanding a high voltage and a method of manufacturing same in which the device comprises a semiconductor substrate having its major surface provided with one or more recessed or dish-shaped portions, a buried region f...	05/09/1978
4064525	Negative-resistance semiconductor device A pair of field-effect transistors (hereinafter referred to as FETs) of p-channel type and n-channel type, respectively, both to be electrically actuated in a depletion mode, are formed on a single semiconductor substrate, for instance, a single silicon s...	12/20/1977
4040082	Storage arrangement comprising two complementary field-effect transistors A semiconductor storage arrangement employing a pair of field-effect transistors which are complementary to one another and connected in series, one of the transistors having the source area thereof connected to the gate area of the second transistor and ...	08/02/1977
4020365	Integrated field-effect transistor switch A monolithic switching circuit has a junction field-effect transistor controlled through a capacitive diode and a small field-effect transistor. The physical structure of the switch includes a junction field-effect transistor with a gate region connected ...	04/26/1977
4005453	Semiconductor device with isolated circuit elements and method of making A semiconductor device having a region of a first conductivity type, a semiconductor layer present thereon, a buried layer of the second conductivity type provided locally between the said layer and the region, a buried layer of the first conductivity typ...	01/25/1977
3986180	Depletion mode field effect transistor memory system The present invention relates to an integrated memory system comprising an array of depletion mode field effect transistors operated in a common control electrode mode to provide an array with the density of metal oxide semiconductor field effect transist...	10/12/1976

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Class 257/E27.069 - PN junction gate field-effect transistor