Class 257/E27.068 - Schottky barrier gate field-effect transistor (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 71
Last issue date: 07/22/2008

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Number	Title	Issue Date
7402852	Charge coupled device having a back electrode A charge coupled device (CCD) is disclosed which has a semiconductor body (20) comprising polymer or oligomer semiconductor material in place of the conventional silicon. A back electrode (22) of the device is electrically coupled to the semi-conductor...	07/22/2008
7195996	Method of manufacturing silicon carbide semiconductor device A manufacturing method for forming a region into which impurity ions are implanted, and an electrode is coupled to the region, in a self-aligned manner. An oxide film is formed on an n-type semiconductor layer composed of a silicon carbide semiconductor, and then th...	03/27/2007
6670688	Semiconductor device including at least one schottky metal layer surrounding PN junction A semiconductor device which can prevent an operation thereof from being uncontrollable to obtain a high reliability, and can be manufactured easily and can reduce a manufacturing cost. A p-type impurity layer containing a p-type impurity in a relatively ...	12/30/2003
6630382	Current controlled field effect transistor Various emdodiments include a transistor device that is controlled by a gate current and that exhibits low power consumption as well as high speed characteristics. In various embodiments, an enhancement mode MESFET device exhibits channel drain current th...	10/07/2003
6624493	Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced carriers in essentially intrinsic, essentially homogeneous...	09/23/2003
6610999	Multiple stage high power diode A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface of the semiconductor layer, and an ohmic contact formed on ...	08/26/2003
6580141	Trench schottky rectifier A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift...	06/17/2003
6498367	Discrete integrated circuit rectifier device A power rectifier having low on resistance, fast recovery time and low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the majo...	12/24/2002
6448160	Method of fabricating power rectifier device to vary operating parameters and resulting device A semiconductor rectifying device which emulates the characteristics of a low forward voltage drop Schottky diode and which is capable of a variety of electrical characteristics from less than 1 A to greater than 1000 A current with adjustable breakdown v...	09/10/2002
6440832	Hybrid MOS and schottky gate technology In the fabrication of a semiconductor structure, a silicon substrate is provided, and an insulating layer is provided on the substrate. First and second structures are provided on the insulating layer, the first structure comprising a dielectric on the in...	08/27/2002
6420225	Method of fabricating power rectifier device A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type for...	07/16/2002
6399996	Schottky diode having increased active surface area and method of fabrication A Schottky diode comprises a semiconductor body of one conductivity type, the semiconductor body having a grooved surface, and a metal layer on the grooved surface and forming a Schottky junction with the semiconductor body. The semiconductor body prefera...	06/04/2002
6388286	Power semiconductor devices having trench-based gate electrodes and field plates Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower trench-b...	05/14/2002
6353251	MOS gate Schottky tunnel transistor and an integrated circuit using the same On a Schottky tunnel junction with Schottky metal as a source, an extremely thin and a high density impurities semiconductor layer having a conduction type different from that of a high density impurities semiconductor constituting the base junction is fo...	03/05/2002
6331455	Power rectifier device and method of fabricating power rectifier devices A power rectifier having low on resistance, mass recovery times and low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the maj...	12/18/2001
6307244	Schottky barrier semiconductor device A Schottky barrier semiconductor device comprises an n+ -type semiconductor substrate, an n- -type semiconductor layer grown on the semiconductor substrate by epitaxial growth, and two or more adjacent p+ -type semiconduct...	10/23/2001
6268636	Operation and biasing for single device equivalent to CMOS Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induc...	07/31/2001
6229193	Multiple stage high power diode A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface of the semiconductor layer, and an ohmic contact formed on ...	05/08/2001
6215136	Integrated circuit capable of low-noise and high-power microwave operation Generally, and in one form of the invention, an integrated circuit is disclosed for providing low-noise and high-power microwave operation comprising: an epitaxial material structure comprising a substrate 10, a low-noise channel layer 14, a low-noise buf...	04/10/2001
6186408	High cell density power rectifier A power rectifier having low on resistance, fast recovery times and very low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between th...	02/13/2001
6166404	Semiconductor device in which at least two field effect transistors having different threshold voltages are formed on a common base A semiconductor device including field effect transistors having different threshold voltages formed on a common base, characterized by including: a first field effect transistor having a p-n junction gate; and a second field effect transistor having a Sc...	12/26/2000
6100571	Fet having non-overlapping field control electrode between gate and drain A field control electrode 9 is formed over an insulating film 6 on a channel layer 2, between a gate electrode 5 and a drain electrode 8. Tantalum oxide (Ta2 O5), for example, may be used as the material for the insulating film 6....	08/08/2000
6096590	Scalable MOS field effect transistor A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and dra...	08/01/2000
6091128	Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced...	07/18/2000
6078090	Trench-gated Schottky diode with integral clamping diode A trench-gated Schottky diode of the kind described in U.S. Pat. No. 5,365,102 is provided with an integral clamping diode which protects the gate oxide from damage from high electric fields and hot carrier generation when the device is reverse-biased. Th...	06/20/2000
6066884	Schottky diode guard ring structures The specification describes Schottky barrier devices with distributed guard rings. In one embodiment the guard ring only partially overlaps the barrier. In another embodiment the guard ring is spaced from the barrier throughout, but separated by an MOS ga...	05/23/2000
6049108	Trench-gated MOSFET with bidirectional voltage clamping The gate of a MOSFET is located in a lattice of trenches which define a plurality of cells. Most of the cells contain a MOSFET, but a selected number of the cells at predetermined locations in the lattice contain either a PN diode or a Schottky diode. The...	04/11/2000
5998833	Power semiconductor devices having improved high frequency switching and breakdown characteristics Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower trench-b...	12/07/1999
5886372	Semiconductor device having two composite field effect transistors It is an object of the present invention to provide a semiconductor device that is able to have the same Vp in all FETs formed on one chip. A semiconductor device of the present invention comprises a semiconductor substrate having a first region and a second r...	03/23/1999
5760449	Regenerative switching CMOS system Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are el...	06/02/1998
5751033	Frequency converter circuit structure having two sources A frequency converter has low noise figure and high conversion gain characteristics, and can drive directly a 50 Ohm load. In one embodiment, a dual-gate FET is employed that is composed of a first and second FET as the frequency mixing elements, and a th...	05/12/1998
5686741	Compound semiconductor device on silicon substrate and method of manufacturing the same E and D mode HEMTs are integrated in a laminated layer of pairs of GaAs/AlGaAs layers formed on the same GaAs-on-Si substrate. The gate electrodes of E and D mode HEMTs are formed on different GaAs layers. The GaAs layer on Si contains crystal defects. It...	11/11/1997
5663584	Schottky barrier MOSFET systems and fabrication thereof (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricat...	09/02/1997
5654214	Method of manufacturing a semiconductor device having at least two field effect transistors with different pinch-off voltages A method of manufacturing a semiconductor device comprising a buried channel field effect transistor, which method comprises the formation of a stack of layers on a substrate (1) with an active semiconductor layer (13, 14) having a non-zero aluminium (Al)...	08/05/1997
5633517	Semiconductor device constituting multi-stage power amplifier A semiconductor device has a multi-stage power amplifier, which is composed of a plurality of transistors each having an input terminal and an output terminal. The transistors are disposed on a chip in such a way that the input terminals and output termin...	05/27/1997
5514992	Low-distortion cascode circuit An electronic circuit is provided with a first field effect transistor and a second field effect transistor, in which a drain of the first field effect transistor connected to a source of the second field effect transistor. This electronic circuit inputs ...	05/07/1996
5514605	Fabrication process for compound semiconductor device On a semi-insulative GaAs substrate, a channel layer, an electron supply layer, a threshold voltage controlling layer, an etching stop layer, a contact layer and an insulation layer are grown. By etching the insulation layer, gate openings are formed in a...	05/07/1996
5391512	Method of producing a multi-stage amplifier device A multistage amplifier device including an amplifier at the first stage or each of active elements of amplifiers at plural stages containing the first stage and excluding the last stage which is formed of FETs 1a and 1b including a gate having a self-alig...	02/21/1995
5358900	Semiconductor device having overlapping conductor layers and method of producing the semiconductor device A semiconductor device includes a semiconductor substrate, an active layer formed on the semiconductor substrate, source and drain electrodes respectively formed on the active layer, a gate electrode formed on the active layer between the source and drain...	10/25/1994
5355005	Self-doped complementary field effect transistor A complementary field effect structure having a first field effect device (26) including a quantum well having a first channel (12). A first doping region (14) is positioned adjacent to a first quantum well and a first gate electrode (29) is positioned so...	10/11/1994

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Class 257/E27.068 - Schottky barrier gate field-effect transistor (EPO)