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| Number | Title | Issue Date |
| 6060762 | Integrated structure with reduced injection of current between homologous regions An integrated semiconductor structure comprises two homologous P-type regions formed within an N-type epitaxial layer. A P-type region formed in the portion of the epitaxial layer disposed between the two P-type regions includes within it an N-type region... | 05/09/2000 |
| 5317208 | Integrated circuit employing inverse transistors Relatively constant current sources and current mirrors are formed with vertical bipolar transistors operated in the inverse mode. In one embodiment of the invention, an integrated circuit current mirror includes a dual collector vertical NPN bipolar tran... | 05/31/1994 |
| 5177584 | Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same A bipolar SRAM which includes a forward bipolar transistor and a reverse bipolar transistor on an identical semiconductor substrate, is disclosed. Concretely, the base region of the reverse bipolar transistor is formed at a deeper position of the substrat... | 01/05/1993 |
| 4502201 | Semiconductor integrated circuit device and fabrication method thereof The invention discloses a semiconductor integrated circuit device characterized in that an inverse transistor element portion and a normal transistor element portion are formed in a common semiconductor layer and are separated from each other by an oxide ... | 03/05/1985 |
| 4405934 | NPM Anti-saturation clamp for NPN logic gate transistor A bipolar logic gate formed in an isolated N-type epitaxial layer in an integrated circuit device includes a normally operated vertical NPN switch transistor clamped by an inversely operated NPM clamp transistor. The base of the clamp transistor is formed... | 09/20/1983 |
| 4370179 | Method of making a monolithic complementary Darlington amplifier utilizing diffusion and epitaxial decomposition A method of making a semiconductor device which includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween... | 01/25/1983 |
| 4277794 | Structure for logic circuits A structure for logic circuits comprises a current source formed by a PNP transistor and two complementary transistors integrated on the same N-type substrate. A buried plate and P-type walls forms insulating housings. These two complementary transistors ... | 07/07/1981 |
| 4261002 | Monolithic complementary darlington A semiconductor device includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween. The two adjacent portio... | 04/07/1981 |
| 4257059 | Inverse transistor coupled memory cell A semiconductor memory cell comprising first and second bipolar cell transistors cross-coupled by the inverse transistor action of third and fourth bipolar transistors. Each cross-coupling transistor is formed by a single emitter diffusion in an existing ... | 03/17/1981 |
| 4200811 | Frequency divider circuit A relatively high speed, high density integrated circuit for dividing the frequency of an alternating signal includes first and second semiconductor boats formed on a substrate. The first boat includes a plurality of transistors having the semiconductor m... | 04/29/1980 |
| 4160988 | Integrated injection logic (I-squared L) with double-diffused type injector A semiconductor structure, and method for fabrication, including a semiconductor body of one conductivity type having a major surface. A layer of opposite conductivity material is formed on said surface, said layer having an upper planar surface generally... | 07/10/1979 |
| 4159915 | Method for fabrication vertical NPN and PNP structures utilizing ion-implantation A method is given for fabricating vertical NPN and PNP structures on the same semiconductor body. The method involves providing a monocrystalline semiconductor substrate having regions of monocrystalline silicon isolated from one another by isolation regi... | 07/03/1979 |
| 4148055 | Integrated circuit having complementary bipolar transistors An integrated circuit having two vertical complementary bipolar transistors formed from a semiconductor substrate of a first conductivity type, and a deposited layer of second semiconductor type is disclosed. Conductor tracks consisting of portions of the... | 04/03/1979 |
| 4134124 | Semiconductor devices and circuit arrangements including such devices A circuit arrangement is at least partially embodied in a collector-diffusion-isolation (CDI) type device, in a semiconductor body comprising a thin layer initially wholly of one conductivity type on a substrate of the same conductivity type, and the devi... | 01/09/1979 |
| 4005470 | Triple diffused logic elements In a semiconductor structure, a semiconductor body of one conductivity type having a planar surface and a first region of opposite conductivity formed in said body and extending to said surface. Spaced second, third and fourth regions of one conductivity ... | 01/25/1977 |
| 3953866 | Cross coupled semiconductor memory cell A semiconductor memory cell, and a method for fabrication, including a one conductivity semiconductor body having a major surface and an opposite conductivity layer formed on said major surface said layer having a planar surface. Means extend from said pl... | 04/27/1976 |
