Class 257/E27.057 - Vertical complementary transistor (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 91
Last issue date: 05/13/2008

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Number	Title	Issue Date
7371644	Semiconductor device and method of fabricating the same According to the present invention, there is provided a semiconductor device fabrication method, comprising: depositing a mask material on a semiconductor substrate; patterning the mask material and forming a trenc...	05/13/2008
7276754	Annular gate and technique for fabricating an annular gate A memory structure having a vertically oriented access transistor with an annular gate region and a method for fabricating the structure. More specifically, a transistor is fabricated such that the channel of the transistor extends outward with respect to the surfac...	10/02/2007
6624497	Semiconductor device with a reduced mask count buried layer An N type buried layer is formed, in one embodiment, by a non selective implant on the surface of a wafer and later diffusion. Subsequently, the wafer is masked and a selective P type buried layer is formed by implant and diffusion. The coefficient of dif...	09/23/2003
6607960	Bipolar transistor manufacturing method A method of manufacturing a bipolar transistor in a P-type substrate, including the steps of forming in the substrate a first N-type area; forming by epitaxy a first silicon layer; forming in this first layer, and substantially above the first area a seco...	08/19/2003
6573146	Methods of manufacturing complementary bipolar transistors A complementary bipolar transistor having a lateral npn bipolar transistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral...	06/03/2003
6436780	Semiconductor device A number of npn and pnp bipolar transistors are formed in a single chip of silicon, so that some of the transistors have a greater frequency response than others The higher frequency transistors have their emitters located closer to the collectors, by pos...	08/20/2002
6426667	Bidirectional analog switch using two bipolar junction transistors which are both reverse connected or operating in the reverse or inverse mode The present invention relates to an integrated circuit bidirectional switch formed from bipolar transistor devices, in which the saturation voltage is sought to be reduced. More specifically, an integrated NPN bipolar transistor is formed with oxide insul...	07/30/2002
6410395	Method of manufacturing a semiconductor device comprising SiGe HBTs A method of manufacturing a semiconductor device comprising heterojunction bipolar transistors (HBTs), in which method a first semiconductor layer of monocrystalline silicon (5), a second semiconductor layer of monocrystalline silicon comprising 5 to 25 a...	06/25/2002
6404038	Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors A method for fabricating complementary vertical bipolar junction transistors of silicon-on-sapphire in fewer steps than required for true complimentary vertical bipolar junction transistors is disclosed. Initially a thin layer of silicon is grown on a sap...	06/11/2002
6326674	Integrated injection logic devices including injection regions and tub or sink regions A complementary bipolar transistor having a lateral npn bipolar transistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral...	12/04/2001
6265276	Structure and fabrication of bipolar transistor A complementary bipolar transistor device, made of two separate conductive films such as two highly doped polysilicon films of opposite conductivity types. The doped polysilicon film is used for a base of NPN transistor and an emitter of a PNP transistor ...	07/24/2001
6222249	Semiconductor device A number of npn and pnp bipolar transistors is formed in a single chip of silicon, so that some of the transistors have a greater frequency response than others. The higher frequency transistors have their emitters located closer to the collectors, by pos...	04/24/2001
6005282	Integrated circuit with complementary isolated bipolar transistors Process for making an integrated-circuit (IC) chip with junction-isolated complementary bipolar transistors. In this process an N-well is formed in a P-type substrate. P-type dopant is implanted in the N-well to become a sub-collector for a pnp transistor...	12/21/1999
6005283	Complementary bipolar transistors A complementary bipolar transistor having a lateral npn bipolar trasistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral ...	12/21/1999
5970355	Method for fabricating semiconductor device A method for fabricating a semiconductor device having a base electrode, an emitter electrode, and a collector electrode, includes the steps of: forming first, second, and buried layers in a semiconductor substrate; forming first, second, and third epitax...	10/19/1999
5955775	Structure of complementary bipolar transistors A complementary bipolar transistor device, made of two separate conductive films such as two highly doped polysilicon films of opposite conductivity types. The doped polysilicon film is used for a base of NPN transistor and an emitter of a PNP transistor ...	09/21/1999
5892264	High frequency analog transistors, method of fabrication and circuit implementation A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, l...	04/06/1999
5807780	High frequency analog transistors method of fabrication and circuit implementation A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, l...	09/15/1998
5763935	Bipolar semiconductor device and fabricating method thereof The bipolar semiconductor device fabricated according to the present invention have high CB junction breakdown voltage (BVCBO), small capacitance between collector and base and high response speed. A n+ type well diffused layer 105 t...	06/09/1998
5759902	Method of making an integrated circuit with complementary junction-isolated bipolar transistors Process for making an integrated-circuit (IC) chip with junction-isolated complementary bipolar transistors, and novel chip made by such process. P-type dopant is implanted and diffused in an N-type substrate to form a sub-collector for a pnp transistor a...	06/02/1998
5686322	Process for doping two levels of a double poly bipolar transistor after formation of second poly layer A reduced mask set, implant complexity process for manufacturing a (high frequency application) complementary bipolar transistor structure uses the fast lateral diffusion characteristic of a layer of material, that is at least an order of magnitude higher...	11/11/1997
5668397	High frequency analog transistors, method of fabrication and circuit implementation A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, l...	09/16/1997
5614422	Process for doping two levels of a double poly bipolar transistor after formation of second poly layer A reduced mask set, implant complexity process for manufacturing a (high frequency application) complementary bipolar transistor structure uses the fast lateral diffusion characteristic of a layer of material, that is at least an order of magnitude higher...	03/25/1997
5552626	Semiconductor device having bipolar transistors with commonly interconnected collector regions A semiconductor device with bipolar transistors formed in respective island regions in which collector regions of the bipolar transistors do not need to be pulled up to the top of the corresponding island regions and do not need to be contacted with a col...	09/03/1996
5529939	Method of making an integrated circuit with complementary isolated bipolar transistors Process for making an integrated-circuit (IC) chip with junction-isolated complementary bipolar transistors. In this process an N-well is formed in a P-type substrate. P-type dopant is implanted in the N-well to become a sub-collector for a pnp transistor...	06/25/1996
5411898	Method of manufacturing a complementary bipolar transistor An n type buried layer (2b) lying in the lower part of a PNP transistor (101a) is lower in impurity concentration than an n+ type buried layer (2a) lying in the lower part of an NPN transistor (100). A p+ type buried layer (4a) is f...	05/02/1995
5331198	Semiconductor device including IIL and vertical transistors The present invention provides a semiconductor device, in particular, a semiconductor device comprising a vertical npn transistor, a vertical pnp transistor and an IIL which are integrated on the same one-conductivity type semiconductor substrate (1) . Th...	07/19/1994
5323054	Semiconductor device including integrated injection logic and vertical NPN and PNP transistors In a a semiconductor device having a vertical npn transistor, a vertical pnp transistor and an IIL which are integrated on the same substrate, grooves that reach an n+ -type buried layer 5 serving as an emitter of the IIL and an n+ -...	06/21/1994
5302848	Integrated circuit with complementary junction-isolated bipolar transistors A process for making an integrated-circuit (IC) chip with junction-isolated complementary bipolar transistors, and a novel chip made by such a process. P-type dopant is implanted and diffused in an N-type substrate to form a sub-collector for a pnp transi...	04/12/1994
5218227	Semiconductor device and method of manufacturing same An n type buried layer (2b) lying in the lower part of a PNP transistor (101a) is lower in impurity concentration than an n+ type buried layer (2a) lying in the lower part of an NPN transistor (100). A p+ type buried layer (4a) is fo...	06/08/1993
5175607	Semiconductor device and manufacturing method thereof A p-type polycrystalline silicon layer (45) serving as the base electrode of an npn transistor and a p-type polycrystalline silicon layer (50) serving as the emitter electrode of a pnp transistor are simultaneously formed by forming a p-type polycrystalli...	12/29/1992
5162252	Method of fabricating IIL and vertical complementary bipolar transistors The present invention provides a semiconductor device, in particular, a semiconductor device comprising a vertical npn transistor, a vertical pnp transistor and an IIL which are integrated on the same one-conductivity type semiconductor substrate (1). The...	11/10/1992
5066602	Method of making semiconductor IC including polar transistors In a semiconductor IC, a vertical pnp or npn transistor of a uniform characteristic and a high breakdown voltage is made by forming, for example, a p- -collector region (39) in an n-type epitaxial region, an n-well base region (41) formed in th...	11/19/1991
5065214	Integrated circuit with complementary junction-isolated bipolar transistors An integrated-circuit (IC) chip with junction-isolated complementary bipolar transistors, is disclosed. P-type dopant is implanted and diffused in an N-type substrate to form a sub-collector for a pnp transistor and also is implanted and diffused in the s...	11/12/1991
5055418	Process for fabricating complementary contactless vertical bipolar transistors A complementary NPN and PNP contactless vertical transistor structure is formed by a process that includes the steps of providing: (1) a buried layer and P-- tub for NPN; (2) a channel stopper for NPN, and a buried layer for PNP; (3) isolation oxide for N...	10/08/1991
5014107	Process for fabricating complementary contactless vertical bipolar transistors A complementary NPN and PNP contactless vertical transistor structure is formed by a process that includes the steps of providing: (1) a buried layer and P- tub for NPN; (2) a channel stopper for NPN, and a buried layer for PNP; (3) isolation oxide for NP...	05/07/1991
4997776	Complementary bipolar transistor structure and method for manufacture A complementary bipolar transistor structure having one symmetrical intrinsic region for both the NPN and PNP transistors and a method for fabricating the structure. The transistor structure includes a vertical NPN transistor operating in the upward direc...	03/05/1991
4997775	Method for forming a complementary bipolar transistor structure including a self-aligned vertical PNP transistor A method of forming a complementary bipolar transistor device includes the steps of: providing a substrate of semiconductor material including at least two electrically isolated N-type device regions having a generally planar common surface; forming a P-t...	03/05/1991
4981807	Process for fabricating complementary vertical transistor memory cell A compact complementary transistor switch (CTS) memory cell structure utilizing both vertical PNP and vertical NPN transistors in gallium arsenide technology is described. The base region of the vertical PNP transistor merges with the collector region of ...	01/01/1991
4969823	Integrated circuit with complementary junction-isolated bipolar transistors and method of making same Process for making an integrated-circuit (IC) chip with junction-isolated complementary bipolar transistors, and novel chip made by such process. P-type dopant is implanted and diffused in an N-type substrate to form a sub-collector for a pnp transistor a...	11/13/1990

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Class 257/E27.057 - Vertical complementary transistor (EPO)