Did You Know...
...that several people are credited with the invention of the flush toilet? Most people have heard of Thomas Crapper (1837-1910), the sanitary engineer who invented the valve-and-siphon arrangement that made the modern toilet possible. Another claimant to "the throne" was British inventor Alexander Cumming who patented a toilet in 1775. Then there's a nameless Minoan (a native of ancient Crete) who lived 4,000 years ago who supposedly was ahead of his time and created the first flush toilet!
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| Number | Title | Issue Date |
| 6693344 | Semiconductor device having low and high breakdown voltage transistors A base of a low breakdown voltage npn bipolar transistor has p+ diffusion layers. A field insulating layer is formed on the p+ diffusion layer located between the p+ diffusion layer and an emitter, while the p+ ... | 02/17/2004 |
| 6593628 | Semiconductor device and method of manufacturing same The invention relates to an essentially discrete semiconductor device comprising a semiconductor body (10) having a first, preferably bipolar, transistor (T1) with a first region (1) forming a collector (1) of T1, and a second, preferably also bipolar, tr... | 07/15/2003 |
| 6468825 | Method for producing semiconductor temperature sensor A method for producing a semiconductor temperature sensor comprises the steps of forming PNP bipolar transistors and PMOS transistors so that a base region of each of the PNP bipolar transistors and a corresponding N-well region of each of the PMOS transi... | 10/22/2002 |
| 6084286 | Integrated device in an emitter switching configuration and with a cellular structure An integrated device comprises a high-voltage transistor and a low-voltage transistor in an emitter-switching configuration integrated in a chip (400) of semiconductor material comprising a buried P-type region (120) and a corresponding P-type contact reg... | 07/04/2000 |
| 6046492 | Semiconductor temperature sensor and the method of producing the same A semiconductor temperature sensor comprises independent current sources and bipolar transistors connected to form a Darlington circuit. The bipolar transistors have electrodes each connected to one of the current sources. An output voltage of the semicon... | 04/04/2000 |
| 5559661 | Short-circuit-proof transistor output stage, especially ignition output stage for motor vehicles A short-circuit-proof transistorized ignition output stage for motor vehicles, has a power transistor (10) connected in series to a primary winding (11) of an ignition coil (12), and a blocking arrangement including a first switching transistor for turnin... | 09/24/1996 |
| 5550698 | Semiconductor device In a semiconductor device, impurity density at a base region of a protection transistor (9) is lower than impurity density at base regions of transistors (1, 2) which constitute a Darlington transistor (100). With high voltage impressed on a first output ... | 08/27/1996 |
| 5541439 | Layout for a high voltage darlington pair There is disclosed a layout of a high voltage Darlington pair in which a circular field plate is utilized for both high voltage transistors in order to reduce the layout area. In this layout, both transistors of a Darlington pair are circular transistors ... | 07/30/1996 |
| 5514949 | Current mirror with at least one PNP-transistor A current mirror having at least one pnp-transistor and providing overvoltage protection has three collectors designed as partial collectors. Two of the partial collectors and the base are linked to a reference-current source and the other partial collect... | 05/07/1996 |
| 5502338 | Power transistor device having collector voltage clamped to stable level over wide temperature range A power transistor device is provided which has a function of clamping the collector voltage to a stable level for a wide range of temperature variations. In the power transistor device, a plurality of pn junctions are formed to fabricate Zener diodes in ... | 03/26/1996 |
| 5500551 | Integrated emitter switching configuration using bipolar transistors A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partia... | 03/19/1996 |
| 5449949 | Monolithic integrated semiconductor device A monolithic integrated semiconductor is proposed, in which on the main surface of a monolithically integrated n-p-n transistor or p-n-p transistor, a cover electrode (D1) is mounted for internal voltage limitation, covering only a single junction region ... | 09/12/1995 |
| 5399899 | Bipolar epitaxial cascode with low-level base connection A semiconductor device with a semiconductor body (1) is provided with a first and a second bipolar transistor (T1, T2, respectively) in a cascode configuration, in which the semiconductor body (1) comprises, in that order, a collector region (10) and a ba... | 03/21/1995 |
| 5397914 | Power transistor device including power transistors in darlington connection and zener diode which is coupled between collector and base of power transistors and which is formed in polysilicon film In a transistor where collector is connected to an inductive load and switching current flows, a Zener diode comprising structure of plural pn-junctions constituted in series form to a polysilicon is provided between collector and base. Further MOSFET is ... | 03/14/1995 |
| 5397913 | Biopolar/Darlington transistor having enhanced comprehensive electricity characteristics A Darlington transistor having improved comprehensive electric characteristic and a bipolar transistor having improved high voltage characteristic are obtained. A collector resistivity .rho.N- (F) of a collector high resistivity layer (11) in a... | 03/14/1995 |
| 5376821 | Integrated emitter switching configuration using bipolar transistors A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partia... | 12/27/1994 |
| 5151765 | Semiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristics A semiconductor device having a submicron miniaturization level structure comprises a first high-current bipolar transistor having a first wide emitter width and a second high-speed bipolar transistor having a narrow emitter width relatively to the first ... | 09/29/1992 |
| 5083182 | Darlington device with an ultra-lightweight emitter speed-up transistor The emitter region of a speed-up transistor is created in a base of a final transistor of a Darlington device and has a relatively low dopant concentration and small thickness.... | 01/21/1992 |
| 4945396 | Semiconductor device having Darlington transistors A semiconductor device, CHARACTERIZED in that a Darlington transistor in which in one surface of a semiconductor of a first conductivity type, base regions of a second conductivity type, the number of which is larger that the number of base-emitter juncti... | 07/31/1990 |
| 4916494 | Monolithic integrated planar semiconductor system and process for making the same A monolithic integrated semiconductor device is described, wherein for the adjustment of the breakdown voltage a cover electrode (7) is disposed in the area of the pn-junctions and a corresponding potential is applied through a voltage divider (1) for adj... | 04/10/1990 |
| 4855625 | Operational amplifier having low DC current input circuit An input circuit for an operational amplifier which incorporates a bias control transistor for effectively minimizing the input current to a Darlington-connected transistor pair into the same semiconductor region in which the Darlington-connected transist... | 08/08/1989 |
| 4827322 | Power transistor A power transistor according to the present invention improves breakdown resistance, in a monolithic structure for connecting a first-stage transistor and a second-stage transistor in Darlington connection, by constructing the same such that no parasitic ... | 05/02/1989 |
| 4819049 | Method of fabricating high voltage and low voltage transistors using an epitaxial layer of uniform thickness An integrated circuit structure comprises a body of semiconductor material and first and second transistors formed in a surface region of the body. The body of semiconductor material comprises a substrate of silicon doped with a p-type impurity and an epi... | 04/04/1989 |
| 4755694 | Integrated circuit Darlington transistor power stage incorporating various circuit components integrated on the same substrate An integrated anode power stage using one or more Darlington transistors combinations is constituted for currents exceeding 5 amperes and voltages exceeding 200 volts. On a common semiconductor substrate there are provided, in addition to the Darlington c... | 07/05/1988 |
| 4710794 | Composite semiconductor device Disclosed is a composite semiconductor device, comprising a composite substrate consisting of first and second semiconductor substrates, one surface of each of which is mirror-polished, so that the mirror-polished surfaces are bonded together. The first s... | 12/01/1987 |
| 4695867 | Monolithically integrated planar semiconductor arrangement A semiconductor arrangement is suggested which is provided with a capacity transistor and a drive transistor in form of a Dralington-circuit. Thereby, the two transistors are monolithically integrated with a planar technique in a common substrate (8), whi... | 09/22/1987 |
| 4692784 | Dielectric insulation type semiconductor integrated circuit having low withstand voltage devices and high withstand voltage devices At the bottom of an island region in which a low withstand voltage transistor is formed, is provided a high concentration region of the same conductivity type as the island region having a larger thickness than a high concentration region provided at the ... | 09/08/1987 |
| 4691221 | Monolithically integrated bipolar Darlington circuit A monolithically integrated bipolar Darlington circuit comprising a driver transistor and output transistor whereby a semiconductor body contains a base layer of a first conductivity type and a collector layer of a second conductivity type which is below ... | 09/01/1987 |
| 4689655 | Semiconductor device having a bipolar transistor with emitter series resistances An integrated circuit or other semiconductor device, comprises a semiconductor body with a bipolar transistor consisting of electrically parallel transistor structures at least a number of which have a different value of emitter series resistance. The tra... | 08/25/1987 |
| 4654543 | Thyristor with "on" protective circuit and darlington output stage A thyristor is preferably fabricated as a single thyristor device in an integrated circuit. The thyristor is made conductive by applying an ordinary gating voltage to the gate thereof. However, the thyristor can be kept in a conductive state, even though ... | 03/31/1987 |
| 4652902 | Power semiconductor device The present invention comprises a power semiconductor device in which a bipolar transistor and a diode are formed in antiparallel in a semiconductor chip with an emitter electrode (21) on one surface of the transistor (16) serving also as an anode electro... | 03/24/1987 |
| 4646125 | Semiconductor device including Darlington connections A semiconductor device includes a plurality of transistors formed on a common substrate and connected in a Darlington configuration. A conductor is connected between a metallization layer on the base region of a transistor of the last stage in the Darling... | 02/24/1987 |
| 4641171 | Monolithically integrated semiconductor power device A monolithic semiconductor device including an integrated control circuit and a pair of power transistors in a Darlington configuration integrated in the same chip solves the problem of ON-OFF switching which is prevented by the presence of parasitic tran... | 02/03/1987 |
| 4641172 | Buried PN junction isolation regions for high power semiconductor devices A P type buried layer which is buried in an N type low resistance substrate is formed directly through a diffusion after which an N type buried layer is formed through a diffusion. Thereafter, an N type high resistance layer is epitaxially grown on the en... | 02/03/1987 |
| 4639755 | Thermosensitive semiconductor device using Darlington circuit A thermosensitive semiconductor device has a semiconductor substrate of one conductivity type which is used as the common collector of at least two Darlington-connected transistors. The base of the first stage transistor is connected to the common collect... | 01/27/1987 |
| 4631570 | Integrated circuit having buried oxide isolation and low resistivity substrate for power supply interconnection An integrated circuit power supply interconnection technique is disclosed having a highly doped, low resistivity substrate for distribution of the integrated circuit's most positive supply voltage. The substrate functions as the most positive voltage poin... | 12/23/1986 |
| 4618875 | Darlington transistor circuit A Darlington transistor circuit having a power transistor and a driver transistor is proposed. The two transistors are monolithically integrated in a common substrate (10) by a planar process, the substrate forming the collector zones of the two transisto... | 10/21/1986 |
| 4604640 | Darlington transistors In a darlington transistor having an integrated resistor connected from base to emitter of the output transistor element, the effect of the diode between collector and emitter formed when the resistor consists of an extension to the base region is reduced... | 08/05/1986 |
| 4599638 | Planar semiconductor structure breakdown voltage protection using voltage divider A planar semiconductor structure is proposed which has a monocrystalline semiconductor chip (10) of a specific conductivity type, a first zone (11) of the opposite conductivity type introduced into the semiconductor chip (10) by diffusion from a main surf... | 07/08/1986 |
| 4595943 | Reduced beta vertical transistors and method of fabrication The current gain, beta, of a vertical transistor having an emitter formed in an epitaxial base on a substrate collector is reduced by forming a high impurity region of the conductivity type of the base at the base-collector boundary to increase the base w... | 06/17/1986 |
