Class 257/E27.055 - Vertical bipolar transistor only (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 34
Last issue date: 09/16/2008

Number	Title	Issue Date
7425754	Structure and method of self-aligned bipolar transistor having tapered collector A bipolar transistor is provided which includes a tapered, i.e. frustum-shaped, collector pedestal having an upper substantially planar surface, a lower surface, and a slanted sidewall extending between the upper surface and the lower surface, the upper surface havi...	09/16/2008
RE40222	Electronic semiconductor power device with integrated diode A device including an IGBT a formed on a chip of silicon consisting of a P type substrate with an N type epitaxial layer that contains a first P type region and a termination structure, and having a first P type termination region that surrounds the first region, a ...	04/08/2008
7161230	Insulated gate bipolar transistor having a high switching speed and method for fabricating the same An insulated gate bipolar transistor has a P-type collector region containing a P-type impurity such as boron. A relatively thin N-type buffer region containing arsenic in a relatively high concentration is formed on the collector region via an anti-diffusion region...	01/09/2007
7075156	Collector structure for electrostatic discharge protection circuits Electrostatic discharge (ESD) devices for protection of integrated circuits are described. ESD devices may be configured to provide uniform breakdown of finger regions extending through a first region of a substrate having a first conductivity type and into a second...	07/11/2006
7067900	Insulated gate bipolar transistor having a reduced tail current and method of fabricating the same An IGBT has an N-type buffer region between a P-type collector region and a P-type base region. The buffer region includes arsenic as a N-type impurity. The buffer region is formed to have a relatively high impurity concentration of equal to or greater than 5×1017 ...	06/27/2006
6664609	High frequency differential amplification circuit with reduced parasitic capacitance Disclosed is a circuit layout of a differential amplification circuit that constitutes a Gilbert cell, in which two multiple finger bipolar transistors forming a differential amplifier are positioned substantially axially symmetrical to each other. The lo...	12/16/2003
6611043	Bipolar transistor and semiconductor device having the same A bipolar transistor is provided with a collector layer of a first conductive type, a base layer of a second conductive type formed at a surface of the collector layer, and an emitter layer of the first conductive type formed at a surface of the base laye...	08/26/2003
6472288	Method of fabricating bipolar transistors with independent impurity profile on the same chip Bipolar transistors of different designs, particularly designs optimized for different high frequency applications are formed on the same substrate by separate base layer formation processes for epitaxial growth including different material concentration ...	10/29/2002
6437421	Self-aligned dual-base semiconductor process and structure incorporating multiple bipolar device types A semiconductor process is disclosed which forms openings in a dielectric layer through which the base region of both high-voltage and high-gain bipolar transistors are formed. In one embodiment of the invention, the openings for the high-gain transistors...	08/20/2002
6423603	Method of forming a microwave array transistor for low-noise and high-power applications A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the...	07/23/2002
6414371	Process and structure for 50+ gigahertz transistor High frequency performance of transistor designs is enhanced and manufacturing yield improved by removing and reducing sources of parasitic capacitance through combinations of processes from different technologies. After formation of collector, base and e...	07/02/2002
6329699	Bipolar transistor with trenched-groove isolation regions The invention relates to semiconductor devices having a bipolar transistor to form an isolation area within a base electrode contact area to ensure stable contact of the base electrode. The bipolar transistor formed in the transistor area is in the form o...	12/11/2001
6300669	Semiconductor integrated circuit device and method of designing same A semiconductor integrated circuit device comprises a multiple-stage amplifier including a plurality of transistors. The multiple-stage amplifier has a first stage comprising a plurality of bipolar transistors each having a single emitter structure. The b...	10/09/2001
6198154	PNP lateral bipolar electronic device A lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other NPN bipolar devices capable of being operated at high frequencies. The PNP device is incorporated to an electrically insulated multilayer st...	03/06/2001
6087224	Manufacture of trench-gate semiconductor devices The manufacture of a trench-gate semiconductor device, for example a MOSFET or IGBT, includes the steps of forming at a surface (10a) of a semiconductor body (10) a first mask (51) having a first window (51a), and later forming a second mask (52) having a...	07/11/2000
5866461	Method for forming an integrated emitter switching configuration using bipolar transistors A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partia...	02/02/1999
5831324	Electromagnetic wave suppression method in a semiconductor manufacturing process A method for suppressing an electromagnetic wave in a semiconductor manufacturing process contemplates diffusion of a material into a region where active elements for processing a high speed digital signal are massed. During a wafer manufacturing process,...	11/03/1998
5597742	Semiconductor device and method The base region of the power stage and the horizontal isolation region of the integrated control circuit or collector region of a transistor of an integrated circuit consist of portions of an epitaxial layer with a first conductivity type grown in sequenc...	01/28/1997
5500551	Integrated emitter switching configuration using bipolar transistors A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partia...	03/19/1996
5481132	Transistor with a predetermined current gain in a bipolar integrated circuit A bipolar integrated circuit with N-type wells (2) formed in a P-type substrate (1) includes in first wells, first transistors (EBC), the well of which constitutes the collector. P-type base region (7a) is formed in the first well with an N+ emitter regio...	01/02/1996
5444291	Integrated bridge device for optimizing conduction power losses An integrated bridge device includes at least two arms, each of which is formed of a first and second diode connected transistor in series. The device is formed in an N+ substrate, which forms a positive output terminal. N- and N type epitaxial layers are...	08/22/1995
5432376	Semiconductor devices containing power and control transistors The base region of the power stage and the horizontal isolation region of the integrated control circuit or collector region of a transistor of an integrated circuit consist of portions of an epitaxial layer with a first conductivity type grown in sequenc...	07/11/1995
5424510	Circuit and method of providing thermal compensation for a transistor to minimize offset voltage due to self-heating of associated devices A circuit for varying the temperature of a first bipolar transistor in order to thermally compensate for self-heating effects of an associated device in a common signal path with the first transistor, the first transistor being configured within an isolat...	06/13/1995
5219768	Method for fabricating a semiconductor device Selective ion implantation on the respective polysilicon is performed by utilizing a low temperature accelerated oxidation phenomenon in polysilicon with a high impurity concentration and the dependence of an accelerated energy of the impurity projection ...	06/15/1993
5027183	Isolated semiconductor macro circuit Individual stages of a multistage electronic receiver include a pair of conductive isolation regions around each stage to isolate each stage from the other stages and thereby prevent feedback and external noise problems. Each pair of isolation regions inc...	06/25/1991
4949151	Bipolar transistor having side wall base and collector contacts A high integration bipolar transistor operable at very high operating speed is disclosed. A semiconductor device of this invention has a semiconductor substrate of a first conductivity type, a buried impurity region formed on the substrate, and a bipolar ...	08/14/1990
4866001	Very large scale bipolar integrated circuit process A bipolar VLSI process includes masking and patterning, implanting a P+ channel stop and locally oxidizing a lightly P-doped, monolithic silicon substrate to define a long, narrow collector region. An N-type collector is implanted in the collector region....	09/12/1989
4783693	Driver element for inductive loads This driver element for inductive loads, specifically DC motors, step motors, solenoids, and the like comprises a transistor bridge, each transistor of the bridge being parallel connected to a respective flyback diode ensuring recirculation of the current...	11/08/1988
4110782	Monolithic integrated circuit transistor having very low collector resistance A monolithic integrated circuit incudes a vertical transistor having a low collector resistance with high current handling ability. The integrated circuit comprises a P type epitaxial layer grown on an N type substrate with both deep and shallow N type di...	08/29/1978
4089021	Semiconductor device capable of withstanding high voltage and method of manufacturing same A semiconductor device capable of withstanding a high voltage and a method of manufacturing same in which the device comprises a semiconductor substrate having its major surface provided with one or more recessed or dish-shaped portions, a buried region f...	05/09/1978
4072979	Integrated power amplifier An integrated power amplifier, composed of a multiplicity of elemental transistors epitaxially grown on a semiconductor chip, has base, emitter and collector terminals each connected in parallel to corresponding electrodes of the several elemental transis...	02/07/1978
4046605	Method of electrically isolating individual semiconductor circuits in a wafer A monolithic integrated circuit includes a vertical transistor having a low collector resistance with high current handling ability. The integrated circuit comprises a P type epitaxial layer grown on an N type substrate with both deep and shallow N type d...	09/06/1977
3999215	Integrated semiconductor device comprising multi-layer circuit element and short-circuit means An integrated circuit having multi-layer transistors which are separated from each other by means of tub-shaped or dish-shaped isolation zones. The isolation zones are of a conductivity type opposite to that of the zone of the circuit element which adjoin...	12/21/1976
3995304	D/A bit switch A monolithic integrated circuit having a plurality of transistors arranged in groups to comprise sources of binary weighted currents, each group being disposed about a common center of distribution, so as to minimize thermal perturbations of transistor fu...	11/30/1976

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Class 257/E27.055 - Vertical bipolar transistor only (EPO)