Class 257/E27.052 - Thyristor only (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 40
Last issue date: 06/10/2008

Number	Title	Issue Date
7385230	Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate (149) with an epitaxial layer structure comprised of two modulation doped transistor structures inverted with respect to each other. The transis...	06/10/2008
7332752	Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal An optoelectronic circuit includes a resonant cavity formed on a substrate and into which is injected an input digital optical signal that encodes bits of information (each bit representing an OFF logic level or an ON logic level). A heterojunction thyristor device,...	02/19/2008
7279367	Method of manufacturing a thyristor semiconductor device In a method of processing a semiconductor device, a silicide-blocking layer may be formed over a semiconductor material. After defining the silicide-blocking layer, impurities may be implanted into portions of the semiconductor material as defined by the silicide-bl...	10/09/2007
7262442	Triac operating in quadrants Q1 and Q4 A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into a first and a second well portion, the first portion being connected t...	08/28/2007
7205583	Thyristor and method of manufacture A thyristor and a method for manufacturing the thyristor that includes providing a semiconductor substrate that has first and second major surfaces. A first doped region is formed in the semiconductor substrate, wherein the first doped extends from the first major s...	04/17/2007
7154152	Semiconductor device A semiconductor device has a p-type substrate, a low-concentration n-type region formed in the p-type substrate, a first high-concentration p-type region formed in the low-concentration n-type region and connected to a first electrode, a first high-concentration n-t...	12/26/2006
7145201	Semiconductor component A semiconductor component (10) is proposed in which a control resistance element (NTC) is provided in electrical contact between a control region (G) for setting operating properties and a first input/output region (S), the control resistance element (NTC) ha...	12/05/2006
6690039	Thyristor-based device that inhibits undesirable conductive channel formation A semiconductor device is adapted to inhibit the formation of a parasitic MOS-inversion channel between an emitter region and a gated base in a capacitively-coupled thyristor device. According to an example embodiment of the present invention, a thyristor...	02/10/2004
6686612	Thyristor-based device adapted to inhibit parasitic current Parasitic current leakage from a thyristor-based semiconductor device is inhibited. According to an example embodiment of the present invention, a thyristor-based semiconductor device includes a thyristor body portion and a control port located in a subst...	02/03/2004
6683330	Recessed thyristor control port A semiconductor device is formed including a substrate having an upper surface, a thyristor region in the substrate and a control port adapted for capacitively coupling to at least a portion of the thyristor region via a dielectric material. According to ...	01/27/2004
6583496	Single-control monolithic component for a composite bridge A monolithic component including two thyristors of a composite bridge connected to an A.C. voltage terminal by a common terminal corresponding to a common rear surface metallization forming an electrode of opposite biasing of each thyristor. An isolating ...	06/24/2003
6583452	Thyristor-based device having extended capacitive coupling A thyristor-based semiconductor device has a thyristor that exhibits increased capacitive coupling between a conductive structure and a portion of a thyristor. According to an example embodiment of the present invention, the thyristor-based semiconductor ...	06/24/2003
6580141	Trench schottky rectifier A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift...	06/17/2003
6521487	Method for making a thyristor A semiconductor substrate has at least one active area and a STI surrounding the active area. An N-well and an adjacent P-well are formed in the active area. A dummy gate is formed atop the border between the N-well and the P-well, while simultaneously fo...	02/18/2003
6518101	Multi-layer diodes and method of producing same It is proposed to implement the emitter short-circuit structure of a multilayer diode by providing grooves which cut through topmost layer 2 of the multilayer diode. A metal layer 20 applied thereon electrically shorts the topmost layer to subjacent layer...	02/11/2003
6438059	Fuse programming circuit for programming fuses A fuse is programmed by being supplied with a current. The fuse is connected to a thyristor. A control circuit is connected to the gate of the thyristor. The control circuit turns the thyristor ON to allow the fuse to be programmed....	08/20/2002
6403988	Semiconductor device with reverse conducting faculty A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section 114 formed by an n- silicon substrate 101, p+ gate regions 102, 104 formed in one surface of the substrate, a p+...	06/11/2002
6323718	Normally-on bidirectional switch The present invention relates to a normally-on bidirectional switch, including, in parallel between two power terminals of the switch, a first cathode-gate thyristor, the anode of which is connected to a first power terminal, a second anode-gate thyristor...	11/27/2001
6252257	Isolating wall between power components The present invention relates to an isolating wall for separating elementary components formed in different wells, a component located in at least one of the wells being capable of operating with a high current density. The isolating wall exhibits in its ...	06/26/2001
6069371	Semiconductor rectifier and a method for driving the same A semiconductor rectifier in which the sum of loss during reverse recovery and loss in a conducting state can be suppressed even if the ratio between the periods of the conducting and blocking states varies and a method of driving the same are disclosed. ...	05/30/2000
5914502	Assembly of thyristors having a common cathode A monolithic assembly of thyristors having a common cathode and a single gate includes a lightly-doped substrate, several anode regions, on the front surface side, a cathode gate layer on the rear surface side of the substrate, a cathode layer on the rear...	06/22/1999
5831289	Silicon carbide gate turn-off thyristor arrangement A silicon carbide gate turn off thyristor (GTO) has a silicon carbide junction field effect transistor (JFET) connected between the gate of the GTO and one of its anode or cathode electrodes thereby minimizing cooling requirements while providing for rapi...	11/03/1998
5614771	Extended high voltage SCR switch A high voltage switch in which an extended SCR is built in an insulated polysilicon layer for providing a single structure high voltage switch. The high voltage SCR is built by building unit SCRs comprising a cathode, a gate, an anode and a voltage sustai...	03/25/1997
5468976	Semi conductor rectifying module A semiconductor rectifying module has a metal base, a dielectric heat conducting spacer arranged on the metal base and rectifying elements of anode and cathode groups arranged with their cathodes and anodes on the spacer, the rectifying elements being com...	11/21/1995
5401984	Semiconductor component for transient voltage limiting A semiconductor component for limiting transient voltages on the signal or other supply lines of a system, includes, in a common semiconductor body, a plurality of multi-junction diodes connected in the same sense between a common terminal and respective ...	03/28/1995
5323029	Static induction device A static induction device (SI device) at least shares a structure in which an SI thyristor, an IGT and a capacitor are merged onto the single monolithic chip. The SI thyristor has a cathode, an anode and a gate regions, and a channel. The IGT has a well o...	06/21/1994
4942444	Thyristor The invention herein disclosed relates to a thyristor of the MOS control type. The thyristor has a series of semiconductor layers of varying conductibility types lying above one another in which the semiconductor layers lying at the ends of the series are...	07/17/1990
4712124	Complementary lateral insulated gate rectifiers with matched "on" resistances A complementary Lateral Insulated Gate Rectifier (LIGR) includes two complementary LIGR structures fabricated in adjacent surface-adjoining semiconductor wells of the same conductivity type in a semiconductor substrate. The two LIGR structures are of gene...	12/08/1987
4631567	PNPN integrated circuit protective device with integral resistor A semiconductor device comprises an internal circuit and an electrostatic destruction preventing circuit connected between a predetermined electrical potential point and a signal input terminal with respect to the internal circuit. The electrostatic destr...	12/23/1986
4586073	High voltage junction solid-state switch A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body on an n type semiconductor substrate. A p+ type anode region and an n+ type cathode region exist in portions of the semiconductor body...	04/29/1986
4393573	Method of manufacturing semiconductor device provided with complementary semiconductor elements The semiconductor device is provided with semiconductor elements having the complementary characteristics and high breakdown strength. These semiconductor elements are formed in N and P islands respectively each having an inverted frustum shape. Surfaces ...	07/19/1983
4370567	Semiconductor switch device suitable for A.C. power control A semiconductor switch device suitable for a.c. power control includes three 4-layer switch components in parallel in a single body of semiconductor material. First and second components are of the same polarity and of opposite polarity to the third compo...	01/25/1983
4354121	Field controlled thyristor control circuit with additional FCT in reverse bias circuit A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thy...	10/12/1982
4320411	Integrated circuit with double dielectric isolation walls A semiconductor integrated circuit comprising a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, which is of a conductivity type opposite to that of the substrate, a buried layer of a conductivity type opposite to that of...	03/16/1982
4250409	Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches To switch a first gated diode switch (GDS) to the "OFF" state requires a voltage applied to the gate which is more positive than that of the anode or cathode and the sourcing of current into the gate which is of the same order of magnitude as flows betwee...	02/10/1981
4242697	Dielectrically isolated high voltage semiconductor devices A structure for achieving closely spaced high voltage devices in integrated circuits. The devices are formed in single crystalline tubs (11) in a polycrystalline substrate (10). In order to prevent the potential of the substrate from causing breakdown of ...	12/30/1980
4050083	Integrated thermally sensitive power switching semiconductor device, including a thermally self-protected version A monolithic semiconductor device is disclosed comprising a power switching thyristor and a temperature sensitive thyristor integrated on a common substrate. In preferred form, the temperature sensitive thyristor is electrically connected between the gate...	09/20/1977
4031607	Minority carrier isolation barriers for semiconductor devices A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produc...	06/28/1977
3988762	Minority carrier isolation barriers for semiconductor devices A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produc...	10/26/1976
3961356	Integrated circuit with oxidation-junction isolation and channel stop An oxide-isolated, vertical bipolar transistor integrated circuit provided with a channel stop preventing inversion of the base region of the transistors and serving as a channel stop between buried isolation junctions, the channel stop bordering the whol...	06/01/1976

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Class 257/E27.052 - Thyristor only (EPO)