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| Number | Title | Issue Date |
| 7443008 | Lateral programmable polysilicon structure incorporating polysilicon blocking diode A programmable element includes a diode and a programmable structure formed in a polysilicon layer isolated from a semiconductor substrate by a dielectric layer. The diode includes a first region and a second region of opposite conductivity types. The programmable s... | 10/28/2008 |
| 7417265 | Schottky diode structure with enhanced breakdown voltage and method of manufacture In one embodiment, a Schottky diode structure comprises a Schottky barrier layer in contact with a semiconductor material through a Schottky contact opening. A conductive ring is formed adjacent the Schottky contact opening and is separated from the semiconductor ma... | 08/26/2008 |
| 7410860 | Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions Apparatus and Methods for the self-alignment of separated regions in a lateral MOSFET of an integrate circuit. In one embodiment, a method comprising, forming a relatively thin dielectric layer on a surface of a substrate. Forming a first region of relatively thick ... | 08/12/2008 |
| 7405445 | Semiconductor structure and method for ESD protection A semiconductor integrated circuit structure includes a plurality of diodes disposed in the substrate. These diodes are electrically coupled in series. At least one insertion region is disposed in the substrate between two of the diodes and a supply voltage node ele... | 07/29/2008 |
| 7381997 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 06/03/2008 |
| 7339186 | IC chip with nanowires Arrangement of nanowires with PN junctions between bit lines and word lines are arranged as a ROM memory cell array. A number of the nanowires have dielectric regions and are present only as a dummy. The connections between word and bit lines may also exist as trans... | 03/04/2008 |
| 7335927 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 02/26/2008 |
| 7279725 | Vertical diode structures A method of making a vertical diode structure is provided, the vertical diode structure having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interio... | 10/09/2007 |
| 7170103 | Wafer with vertical diode structures A method of making a vertical diode is provided, the vertical diode having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the dio... | 01/30/2007 |
| 7145255 | Lateral programmable polysilicon structure incorporating polysilicon blocking diode A programmable element includes a diode and a programmable structure formed in a polysilicon layer isolated from a semiconductor substrate by a dielectric layer. The diode includes a first region and a second region of opposite conductivity types. The programmable s... | 12/05/2006 |
| 6967363 | Lateral diode with multiple spacers Various circuit devices, including diodes, and methods manufacturing therefor are provided. In one aspect, a method manufacturing is provided that includes forming a gate structure on a semiconductor portion of a substrate. The semiconductor portion has a first cond... | 11/22/2005 |
| 6693305 | Semiconductor device formed by cascade-connecting a plurality of diodes A semiconductor device includes a plurality of diodes including a substrate of a first conductivity type biased to a reference potential, a well region of a second conductivity type formed in a surface region of the substrate, and a first diffusion region... | 02/17/2004 |
| 6683363 | Trench structure for semiconductor devices A MOS trench structure integrated with a semiconductor device for enhancing the breakdown characteristics of the semiconductor device, comprises a semiconductor substrate, a plurality of parallel trenches formed in the semiconductor substrate, a periphera... | 01/27/2004 |
| 6677207 | Vanishingly small integrated circuit diode An embodiment of the instant invention is a method of implementing a vanishingly small integrated circuit diode comprising the steps of: forming an area of a thin dielectric film (201 of FIG. 2) over a conductive silicon surface ( 10 of FIG. 2) of one con... | 01/13/2004 |
| 6674148 | Lateral components in power semiconductor devices A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping, according to the first conductivity type, the back surface... | 01/06/2004 |
| 6610999 | Multiple stage high power diode A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface of the semiconductor layer, and an ohmic contact formed on ... | 08/26/2003 |
| 6580142 | Electrical control methods involving semiconductor components A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these ... | 06/17/2003 |
| 6559515 | Insulating wall between power components An insulating wall of a second conductivity type intended for separating elementary components formed in different wells of a semiconductive layer of a first conductivity type, a component located in one at least one of the wells being capable of operatin... | 05/06/2003 |
| 6537921 | Vertical metal oxide silicon field effect semiconductor diodes The present invention includes methods and apparatus as described in the claims. Briefly, semiconductor diodes having a low forward conduction voltage drop, a low reverse leakage current, a high voltage capability and avalanche energy capability, suitable... | 03/25/2003 |
| 6537868 | Method for forming novel low leakage current cascaded diode structure A cascaded diode acting as an ESD protection device with reduced substrate leakage current is disclosed. The cascaded diode is composed of a chain of coupled similar elemental diodes, each composed of an n-well in a p-substrate, the n-well having p region... | 03/25/2003 |
| 6524900 | Method concerning a junction barrier Schottky diode, such a diode and use thereof A method for controlling the temperature dependence of a junction barrier Schottky diode of a semiconductor material having an energy gap between the valence band and the conduction band exceeding 2 eV provides for doing this when producing the diode by a... | 02/25/2003 |
| 6518101 | Multi-layer diodes and method of producing same It is proposed to implement the emitter short-circuit structure of a multilayer diode by providing grooves which cut through topmost layer 2 of the multilayer diode. A metal layer 20 applied thereon electrically shorts the topmost layer to subjacent layer... | 02/11/2003 |
| 6515345 | Transient voltage suppressor with diode overlaying another diode for conserving space A semiconductor component includes a semiconductor layer (210) and at least one diode (220) in the semiconductor layer. The semiconductor component also includes an electrically insulative layer (230) over the semiconductor layer and the diode. The semico... | 02/04/2003 |
| 6498367 | Discrete integrated circuit rectifier device A power rectifier having low on resistance, fast recovery time and low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the majo... | 12/24/2002 |
| 6486524 | Ultra low Irr fast recovery diode A FRED device having an ultralow Irr employs a contact layer which contacts spaced P diffusions in an N type silicon substrate and also contacts the silicon surface spanning between the P diffusions. The contact layer is formed of a contact hav... | 11/26/2002 |
| 6465864 | Diode structure on MOS wafer Three diode structures on a metal-oxide-semiconductor (MOS) wafer. Each diode structure is capable of reducing parasitic current through the wafer and hence increasing the power conversion efficiency of a voltage step-up circuit.... | 10/15/2002 |
| 6448160 | Method of fabricating power rectifier device to vary operating parameters and resulting device A semiconductor rectifying device which emulates the characteristics of a low forward voltage drop Schottky diode and which is capable of a variety of electrical characteristics from less than 1 A to greater than 1000 A current with adjustable breakdown v... | 09/10/2002 |
| 6433370 | Method and apparatus for cylindrical semiconductor diodes Semiconductor diodes are diode connected cylindrical junction field effect devices having one diode terminal as the common connection between a top gate, a back gate and a first channel terminal of the cylindrical junction field effect devices. The second... | 08/13/2002 |
| 6426542 | Schottky diode with dielectric trench An improved diode or rectifier structure and method of fabrication is disclosed involving the incorporation in a Schottky rectifier, or the like, of a dielectric filled isolation trench structure formed in the epitaxial layer adjacent the field oxide laye... | 07/30/2002 |
| 6420225 | Method of fabricating power rectifier device A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type for... | 07/16/2002 |
| 6411155 | Power integrated circuit A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these ... | 06/25/2002 |
| 6399996 | Schottky diode having increased active surface area and method of fabrication A Schottky diode comprises a semiconductor body of one conductivity type, the semiconductor body having a grooved surface, and a metal layer on the grooved surface and forming a Schottky junction with the semiconductor body. The semiconductor body prefera... | 06/04/2002 |
| 6392266 | Transient suppressing device and method A method is provided for suppressing a transient signal (VTR) using a single semiconductor die (130). The method comprises the step of loading the transient signal with first and second junctions (110, 112) formed adjacent to a first doped regi... | 05/21/2002 |
| 6351023 | Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same A semiconductor device such as a P-N or P-I-N junction diode, includes a first semiconductor layer having a first conductivity-type and being mounted over a metal address line, and a second semiconductor layer having a second conductivity-type and being m... | 02/26/2002 |
| 6344679 | Diode with alterable conductivity and method of making same A semiconductor device (102) having a plurality of diodes (100) with alterable electrical conductivity by a source of energy (30), e.g., a laser, external to the semiconductor device. The diodes are formed and energy is applied to alter the electrical con... | 02/05/2002 |
| 6331455 | Power rectifier device and method of fabricating power rectifier devices A power rectifier having low on resistance, mass recovery times and low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the maj... | 12/18/2001 |
| 6303969 | Schottky diode with dielectric trench An improved diode or rectifier structure and method of fabrication is disclosed involving the incorporation in a Schottky rectifier, or the like, of a dielectric filled isolation trench structure formed in the epitaxial layer adjacent the field oxide laye... | 10/16/2001 |
| 6297536 | Diode structure compatible with silicide processes for ESD protection A diode structure compatible with silicide processes for electrostatic discharge protection is disclosed. The diode structure comprises a semiconductor layer of a first conductivity type, a diffusion region of a second conductivity type formed in the semi... | 10/02/2001 |
| 6277708 | Semiconductor structures for suppressing gate oxide plasma charging damage and methods for making the same Disclosed is a semiconductor diode structure, and method for making semiconductor diode structures for suppressing transistor gate oxide plasma charging damage. The semiconductor diode structure includes a shallow trench isolation region that is configure... | 08/21/2001 |
| 6262443 | Monolithic protected rectifying bridge The present invention relates to a semiconducting structure constituting a protected rectifying bridge implemented in an N-type semiconductor substrate divided into first, second, and third wells by vertical P-type isolating walls, in which the rear surfa... | 07/17/2001 |
