Did You Know...
...that the video game, Pong, was invented by a guy who graduated at the bottom of his engineering class? Nolan Bushnell spent more time running the games at a local amusement park than he did on his studies at the University of Utah. His dreams of working for Disney's amusement empire were dashed when the company wouldn't hire him. Taking a boring job, Nolan daydreamed about electronic versions of popular games. He invented Pong, the first video game, and went on to found Atari Co.
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| Number | Title | Issue Date |
| 7339238 | Semiconductor device including a capacitance It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film 167 (1... | 03/04/2008 |
| 7208364 | Methods of fabricating high voltage devices Methods of fabrication and devices include field plates formed during capacitor formation. Isolation structures are formed in a semiconductor substrate. Well regions are formed in the semiconductor substrate. Drain extension regions are formed in the well regions. A... | 04/24/2007 |
| 7176125 | Method of forming a static random access memory with a buried local interconnect An SRAM cell includes six transistors. The storage nodes are implemented using local interconnects. A first level of metal overlies the interconnects but is electrically isolated therefrom. Contact plugs are formed to couple the cell to the first level of metal. The... | 02/13/2007 |
| 6649958 | Semiconductor device with MIS capacitors sharing dielectric film A semiconductor device having an MIS capacitor having a low capacitance value and an MIS capacitor having a high capacitance value, and to a manufacturing method thereof. One MIS capacitor consists of a lower conductive material region formed on the subst... | 11/18/2003 |
| 6649985 | Insulated-gate semiconductor device for a rectifier An insulated-gate semiconductor device comprises a source region (S) formed on a predetermined semiconductor substrate such as a ball semiconductor, a drain region (D) formed on the semiconductor substrate at a distance from the source region; and a gate ... | 11/18/2003 |
| 6608365 | Low leakage PMOS on-chip decoupling capacitor cells compatible with standard CMOS cells An on-chip decoupling capacitor cell is disclosed that is compatible with standard CMOS cells. A cell boundary defining the area of the cell includes a first transistor area and a second transistor area. A PMOS transistor having an n-well is formed within... | 08/19/2003 |
| 6608747 | Variable-capacitance device and voltage-controlled oscillator A variable-capacitance device includes first and second variable-capacitance elements which are connected in parallel to each other. Each of the first and variable-capacitance elements include gate, source and drain regions and operates in response to a c... | 08/19/2003 |
| 6420757 | Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability Semiconductor diodes are diode connected cylindrical field effect transistors having one diode terminal as the common connection between the gate and the drain of the cylindrical field effect transistors. The method of processing the field effect transist... | 07/16/2002 |
| 6380054 | Schottky diode with reduced size The silicon real estate consumed by a conventional Schottky diode is reduced in the present invention by forming the Schottky diode through a field oxide isolation region. Etching through the field oxide isolation region requires extra etch time which is ... | 04/30/2002 |
| 6285052 | Integrated capacitor An integrated capacitor includes a device region of first conductivity type in a semiconductor substrate, a source/drain region of the first conductivity type in the device region with a higher doping concentration than the device region, a gate insulator... | 09/04/2001 |
| 6262469 | Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor A capacitor divider includes two capacitors coupled in series between two voltage sources. A first capacitor is a floating gate capacitor having one plate being the control gate of a floating gate transistor structure and the other plate being a source, d... | 07/17/2001 |
| 6232163 | Method of forming a semiconductor diode with depleted polysilicon gate structure A high voltage tolerant diode structure for mixed-voltage, and mixed signal and analog/digital applications. The preferred silicon diode includes a polysilicon gate structure on at least one dielectric film layer on a semiconductor (silicon) layer or body... | 05/15/2001 |
| 6218688 | Schottky diode with reduced size The silicon real estate consumed by a conventional Schottky diode is reduced in the present invention by forming the Schottky diode through a field oxide isolation region. Etching through the field oxide isolation region requires extra etch time which is ... | 04/17/2001 |
| 6066884 | Schottky diode guard ring structures The specification describes Schottky barrier devices with distributed guard rings. In one embodiment the guard ring only partially overlaps the barrier. In another embodiment the guard ring is spaced from the barrier throughout, but separated by an MOS ga... | 05/23/2000 |
| 6015993 | Semiconductor diode with depleted polysilicon gate structure and method A high voltage tolerant diode structure for mixed-voltage, and mixed signal and analog/digital applications. The preferred silicon diode includes a polysilicon gate structure on at least one dielectric film layer on a semiconductor (silicon) layer or body... | 01/18/2000 |
| 4477736 | Semiconductor integrated circuit device including means for reducing the amount of potential variation on a reference voltage line In an MOS memory, a reference voltage is generated to determine an input threshold voltage of the input circuit. Noise fed from various signal wirings to the reference voltage wiring via stray capacitances is reduced by a decoupling capacitance formed bet... | 10/16/1984 |
| 4031490 | Analog signal processor An analog signal processor in which the voltage is sensed across a plurality of charge storage elements to derive an output signal. With this arrangement, the effects of signal interaction encountered in charge sensing are eliminated. The processor can be... | 06/21/1977 |
| 4017885 | Large value capacitor Disclosed is a semiconductor capacitor which utilizes the volume of the semiconductor substrate in which it is formed to create increased surface area and thereby to provide increased capacitance. The surface area is increased by forming selectively space... | 04/12/1977 |
