Class 257/E27.049 - Varactor diode (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 22
Last issue date: 05/27/2008

Number	Title	Issue Date
7378327	Method for fabricating a junction varactor with high Q factor A junction varactor includes a gate finger lying across an ion well of a semiconductor substrate; a gate dielectric situated between the gate finger and the ion well; a first ion diffusion region with first conductivity type located in the ion well at one side of th...	05/27/2008
7211493	Variable capacitor structure and method of manufacture A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type ion-doped well is formed within the substrate. The first type ion-doped...	05/01/2007
6683341	Voltage-variable capacitor with increased current conducting perimeter A parallel-plate, voltage-variable capacitor is designed to have an increased current conducting perimeter relative to its area. In one approach, the perimeter is increased by changing the shape of the plates. In another approach, the varactor is implemen...	01/27/2004
6661074	Receiver comprising a variable capacitance diode A receiver for radio or television signals provided with a high-frequency circuit having a discrete semiconductor component which includes a planar variable capacitance diode and an integrated series resistor formed on a common semiconductor or substrate....	12/09/2003
6642607	Semiconductor device A variable capacitor includes an N+ layer including a variable capacitance region, a P+ layer epitaxially grown on the N+ layer and formed from a SiGe film and a Si film, and a P-type electrode. An NPN-HBT (Hetero-junction...	11/04/2003
6583495	Variable capacitor and memory device employing the same A variable capacitor and a memory device employing the same. The variable capacitor includes a first electrode formed above a substrate; a second electrode suspended with respect to the first electrode to be moved back and forth with respect to the first ...	06/24/2003
6552887	Voltage dependent capacitor configuration for higher soft error rate tolerance A voltage dependent capacitor to provide soft error rate tolerance in an integrated circuit is disclosed. In one embodiment, a parallel n-p voltage dependent capacitor is used to protect a node from noise. In another embodiment, an nFET-in-nWell voltage d...	04/22/2003
6521939	High performance integrated varactor on silicon A new MOS varactor device is described. A bottom electrode comprises a plurality of diffusion junctions in a semiconductor substrate. The semiconductor substrate may be n-type or p-type. The diffusion junctions are arranged in a two-dimensional array. The...	02/18/2003
6521506	Varactors for CMOS and BiCMOS technologies Varactors are provided which have a high tunability and/or a high quality factor associated therewith as well as methods for fabricating the same. One type of varactor disclosed is a quasi hyper-abrupt base-collector junction varactor which includes a sub...	02/18/2003
6407412	MOS varactor structure with engineered voltage control range The present invention relates to a metal oxide semiconductor (MOS) varactor that takes advantage of the beneficial characteristics of MOS varactors to provide a high maximum to minimum capacitance ratio. By coupling in parallel at least one pair of MOS va...	06/18/2002
6377440	Dielectric varactors with offset two-layer electrodes A varactor comprising a substrate, a first conductor positioned on a surface of the substrate, a second conductor positioned on the surface of the substrate forming a gap between the first and second conductors, a tunable dielectric material positioned on...	04/23/2002
6303957	Semiconductor capacitance device and semiconductor devices using the same A semiconductor capacitance device comprising a first semiconductor capacitive element (30) having a first voltage dependency factor K1 (0) with a gradient ...	10/16/2001
6278158	Voltage variable capacitor with improved C-V linearity A voltage variable capacitor includes a supporting substrate with a doped layer, an insulating layer positioned on the doped layer, and first, second, and third conductive segments positioned on the insulating layer parallel to the doped layer and spaced ...	08/21/2001
6278871	Integrated circuit including a low-dispersion capacitive network The present invention relates to an integrated circuit comprising a series of conducting layers (1) . . . (6), separated in pairs by insulating layers, including a capacitive element CF formed by a stack of conducting layers cut out of the conducting laye...	08/21/2001
6268779	Integrated oscillators and tuning circuits An integrated Voltage controlled oscillator (VCO) includes varactors and fixed capacitors formed in a "stacked" arrangement. Forming the VCO integrated circuit by "stacking" fixed capacitors upon underlying varactors frees up semiconductor surface area fo...	07/31/2001
6228734	Method of manufacturing a capacitance semi-conductor device A variable capacitance semiconductor device (10) such as a varactor diode, is formed to have a plurality of openings (13), such as a plurality of trenches, that cause the depletion regions (16) to overlap. This overlap results in a rapid change of capacit...	05/08/2001
6101102	Fixed frequency regulation circuit employing a voltage variable dielectric capacitor Frequency regulating apparatus comprising a high power, voltage variable dielectric varactor or capacitor (or ferroelectric voltage variable dielectric capacitor) for use as a control element in the regulation circuit that actively tunes a resonant networ...	08/08/2000
5825075	Variable capacitance diode device and method of manufacturing same When a variable capacitance diode device is formed on each of chips obtained by cutting off a wafer, the capacitance values of the diode devices formed on the chips disperse for each wafer due to change in the manufacturing process conditions. To reduced ...	10/20/1998
4191899	Voltage variable integrated circuit capacitor and bootstrap driver circuit An integrated circuit junction capacitor is formed using conventional bipolar transistor technology. Voltage variable capacitance is provided by a reverse biased emitter-base junction and parasitic collector-base capacitance is isolated from the emitter-b...	03/04/1980
4019152	Bias circuit for junction diodes An integratable bias circuit for semiconductor junction diodes of the type exhibiting junction capacitance when reverse biased by suitable applied voltages includes a source of fixed bias reference voltage applied to the diode junction. The reference volt...	04/19/1977
4017885	Large value capacitor Disclosed is a semiconductor capacitor which utilizes the volume of the semiconductor substrate in which it is formed to create increased surface area and thereby to provide increased capacitance. The surface area is increased by forming selectively space...	04/12/1977
4005466	Planar voltage variable tuning capacitors A voltage variable tuning capacitor structure is disclosed. A pair of metal-insulator-semiconductor (MIS) capacitors are fabricated in a body of semiconductor material in back-to-back configuration. The back-to-back configuration reduces the effect of int...	01/25/1977

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Class 257/E27.049 - Varactor diode (EPO)