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| Number | Title | Issue Date |
| 7439147 | Resistor of semiconductor device and method for fabricating the same A resistor for a semiconductor device is provided. The resistor can include a first polysilicon layer formed on a semiconductor substrate; an insulating layer formed on regions of the first polysilicon layer; a second polysilicon layer formed on the insulating layer... | 10/21/2008 |
| 7400026 | Thin film resistor structure The present invention relates to a thin film resistor formed over a semiconductor substrate. A gate structure is formed and a dielectric layer is formed over the gate structure. A via is then etched that extends through the dielectric layer so as to expose a conduct... | 07/15/2008 |
| 7394145 | Methods of fabricating passive element without planarizing and related semiconductor device Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarizati... | 07/01/2008 |
| 7375000 | Discrete on-chip SOI resistors A semiconductor resistor, method of making the resistor and method of making an IC including resistors. Buried wells are formed in the silicon substrate of a silicon on insulator (SOI) wafer. At least one trench is formed in the buried wells. Resistors are formed al... | 05/20/2008 |
| 7358592 | Semiconductor device A semiconductor integrated circuit device having a metal thin-film resistance includes a lower insulation film formed over a semiconductor substrate via another lawyer, a metal interconnection pattern formed on the lower insulation film, an underlying insulation fil... | 04/15/2008 |
| 7351639 | Increasing an electrical resistance of a resistor by oxidation or nitridization A method and structure for increasing an electrical resistance of a resistor that is within a semiconductor structure, by oxidizing or nitridizing a fraction of a surface layer of the resistor with oxygen/nitrogen (i.e., oxygen or nitrogen) particles, respectively. ... | 04/01/2008 |
| 7348653 | Resistive memory cell, method for forming the same and resistive memory array using the same A resistive memory cell employs a photoimageable switchable material, which is patternable by actinic irradiation and is reversibly switchable between distinguishable resistance states, as a memory element. Thus, the photoimageable switchable material is directly pa... | 03/25/2008 |
| 7332403 | System and method for providing a buried thin film resistor having end caps defined by a dielectric mask A buried thin film resistor having end caps defined by a dielectric mask is disclosed. A thin film resistor is formed on an integrated circuit substrate. A resistor protect layer is formed over the thin film resistor. A layer of dielectric material is formed over th... | 02/19/2008 |
| 7202533 | Thin film resistors integrated at a single metal interconnect level of die An integrated circuit structure includes a first dielectric layer disposed on a semiconductor layer, a first thin film resistor disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the first thin film resistor,... | 04/10/2007 |
| 7164185 | Semiconductor component and method of manufacture A semiconductor component having a tuned variable resistance resistor and a method for manufacturing the tuned variable resistance resistor. A semiconductor process for manufacturing a semiconductor component is selected. For the selected process, the tuned variable... | 01/16/2007 |
| 7122436 | Techniques for forming passive devices during semiconductor back-end processing Fabrication of electronic devices in the “metal layers” of semiconductor devices. Each metal layer includes a dielectric layer that supports a conductive layer, which includes electrically conductive pathways and electronic devices. The metal layers are stacked ... | 10/17/2006 |
| 7087978 | Semiconductor resistor with improved width accuracy The accuracy of the width measurement of a semiconductor resistor is improved by modifying the gate mask of a standard MOS transistor fabrication process to form an opening between regions of polysilicon that are used as a mask when the substrate or well material is... | 08/08/2006 |
| 6979637 | Method and structure for controlling surface properties of dielectric layers in a thin film component for improved trimming A method and structure for controlling the surface properties in the dielectric layers in a thin film component can be provided for improving the trimming process of thin film element. A metal fill is configured with a uniform fill pattern beneath an array of thin f... | 12/27/2005 |
| 6818966 | Method and structure for controlling surface properties of dielectric layers in a thin film component for improved trimming A method and structure for controlling the surface properties in the dielectric layers in a thin film component can be provided for improving the trimming process of thin film element. A metal fill is configured with a uniform fill pattern beneath an array of thin f... | 11/16/2004 |
| 6703682 | High sheet MOS resistor method and apparatus A method and apparatus is disclosed for providing highly linear resistance with high sheet values, and for implementing resistors in a conventional CMOS process when either drain or source must operate near the rail of a circuit. Accordingly, a five termi... | 03/09/2004 |
| 6703666 | Thin film resistor device and a method of manufacture therefor The present invention provides a thin film resistor and method of manufacture therefor. The thin film resistor comprises a resistive layer located on a first dielectric layer, first and second contact pads located on the resistive layer, and a second diel... | 03/09/2004 |
| 6700474 | High value polysilicon resistor A resistor structure is disclosed that is constructed out of two layers of polysilicon. The intrinsic device is made using the top layer which is either a dedicated deposition, or formed as part of an existing process step such as a base epi growth in a B... | 03/02/2004 |
| 6701492 | Method for the determination of resistances and capacitances of a circuit diagram, which represents an electrical circuit From a circuit diagram, an electrically connected circuit diagram network is selected. From a layout representing the circuit diagram, an electrically connected layout network is selected that represents the circuit diagram network. A first electrical ter... | 03/02/2004 |
| 6696916 | Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof The high-voltage resistor is of the vertical type, and is formed in a chip which includes a high-voltage region and a low-voltage region superimposed on the high-voltage region, both having a first conductivity type. An isolation region, at least partiall... | 02/24/2004 |
| 6686750 | Semiconductor integrated circuit device and IC card A semiconductor integrated circuit device is provided with an IC chip so as to prevent its circuits from malfunction when the IC chip is cracked. To detect chip cracks, a resistor R01 is disposed at the outer periphery of the area in which one wants to de... | 02/03/2004 |
| 6683345 | Semiconductor device and method for making the device having an electrically modulated conduction channel A semiconductor device having a conduction channel which is electrically modulated. A trench structure is formed within a substrate enclosing a diffusion region. The trench structure isolates the devices formed within the diffusion region from the remaini... | 01/27/2004 |
| 6667538 | Semiconductor device having semiconductor resistance element and fabrication method thereof A semiconductor device having a semiconductor resistance element is capable of suppressing a variation in characteristics of the semiconductor resistance element due to an acceptor concentration which is difficult to control, thereby stably improving the ... | 12/23/2003 |
| 6661074 | Receiver comprising a variable capacitance diode A receiver for radio or television signals provided with a high-frequency circuit having a discrete semiconductor component which includes a planar variable capacitance diode and an integrated series resistor formed on a common semiconductor or substrate.... | 12/09/2003 |
| 6661095 | Semiconductor device The structure around a high-resistance element is formed in mirror symmetry to a plane perpendicular to a semiconductor substrate and the surface of the sheet. Specifically, high-resistance element, contact plugs and extending portion of interconnection l... | 12/09/2003 |
| 6653155 | Integrated circuit devices including a resistor pattern and methods for manufacturing the same Methods are provided for forming an integrated circuit device including a resistor pattern having a desired resistance value. A low resistive layer is formed on an integrated circuit substrate. An insulating layer is formed on the low resistive layer oppo... | 11/25/2003 |
| 6653713 | Thin film resistor with stress compensation A thin film resistor maintains its resistance value when stress is applied so that it may be used in a high precision bleeder resistor circuit to maintain an accurate voltage dividing ratio. The thin film resistor has a P-type thin film resistor formed of... | 11/25/2003 |
| 6649499 | Method of varying the resistance along a conductive layer A method for varying the resistance along a conductive layer. The method including the step of removing at least a portion of a resistance-altering constituent diffused within the conductive layer.... | 11/18/2003 |
| 6649463 | Regulating resistor network, semiconductor device including the resistor network, and method for fabricating the device A regulating resistor network includes a plurality of resistors connected in parallel to each other. Each of these resistors is cuttable by being irradiated with light, and a resistance value of the regulating resistor network is adjustable by cutting at ... | 11/18/2003 |
| 6646539 | Temperature-compensated semiconductor resistor and semiconductor integrated circuit having the semiconductor resistor A temperature-compensated semiconductor resistor includes two series-connected semiconductor resistance elements having mutually inverse resistive temperature-dependent responses in a temperature range of interest. The semiconductor resistance elements ar... | 11/11/2003 |
| 6642604 | Semiconductor device with resistor layer having heat radiation path to semiconductor substrate A resistor layer (5) is formed on an isolation insulating film (4) selectively formed in a major surface (1S) of a semiconductor substrate (1). An interlayer insulation film (7) covering the resistor layer (5) has first and second plugs (9, 19) buried the... | 11/04/2003 |
| 6642076 | Asymmetrical reset transistor with double-diffused source for CMOS image sensor A new method to form CMOS image sensors in the manufacture of an integrated circuit device is achieved. The method comprises providing a semiconductor substrate. Sensor diodes are formed in the semiconductor substrate each comprising a first terminal and ... | 11/04/2003 |
| 6627971 | Polysilicon structures with different resistance values for gate electrodes, resistors, and capacitor plates A device with a plurality of structures with different resistance values is formed on a substrate. A polysilicon layer is formed upon the substrate. A silicon oxide layer is formed over the substrate. A hard masking layer is formed over the silicon oxide ... | 09/30/2003 |
| 6624737 | Voltage regulated circuit with well resistor divider This invention relates to a voltage regulated circuit, more particularly, to a voltage regulated circuit with a well resistor divider. The present invention applies two well resistors act as the voltage regulated circuit and uses the characteristic of the... | 09/23/2003 |
| 6624079 | Method for forming high resistance resistor with integrated high voltage device process The method for forming high voltage device combined with a mixed mode process use an un-doped polysilicon layer instead of the conventional polysilicon layer. In the high resistance area, the ion implant is not used until the source region and the drain r... | 09/23/2003 |
| 6621404 | Low temperature coefficient resistor A resistor having a desired temperature coefficient of resistance and a total electrical resistance. A first resistor segment has a first temperature coefficient of resistance and a first electrical resistance. A second resistor segment has a second tempe... | 09/16/2003 |
| 6590272 | Structure for a semiconductor resistive element, particularly for high voltage applications A structure for a semiconductor resistive element, applicable in particular to power components, having a high concentration substrate of the n type, a first epitaxial layer of the n type, a region of the p type arranged on said first epitaxial layer so t... | 07/08/2003 |
| 6576978 | Use of non-ion-implanted resistive silicon oxynitride films as resistors The present disclosure is directed to the use of non-ion-implanted silicon oxynitride films as resistive elements. Such films have been traditionally used in semiconductor processing as antireflective coatings, but their utility as highly resistive circui... | 06/10/2003 |
| 6566721 | Semiconductor device It is intended to provide a semiconductor device in which a fuse required conventionally is omitted and an initial resistance value can be maintained even under stress imposed due to packaging or the like, a high-accuracy bleeder resistance circuit that c... | 05/20/2003 |
| 6566732 | High voltage resistive structure integrated on a semiconductor substrate A resistive structure integrated on a semiconductive substrate is described. The resistive structure has a first type of conductivity formed into a serpentine region of conductivity which is opposite to that of the semiconductive substrate. In at least tw... | 05/20/2003 |
| 6562689 | Non-ion-implanted resistive silicon oxynitride films as resistors The present disclosure is directed to the use of non-ion-implanted silicon oxynitride films as resistive elements. Such films have been traditionally used in semiconductor processing as antireflective coatings, but their utility as highly resistive circui... | 05/13/2003 |
