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Class 257/E27.045 - Combination of capacitor and resistor (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 11
Last issue date: 06/17/2008


NumberTitleIssue Date
7388275Electronic package with integrated capacitor
Generally provided is a circuit assembly construction for controlling impedance in an electronic package. A large scale, parallel-plate capacitor includes two electrodes separated by a dielectric material. The electrodes serve as reference voltage planes for the ele...
06/17/2008
7365428Array capacitor with resistive structure
An apparatus comprises a first plurality of contacts disposed on a first side of the apparatus, adapted to engage with a first corresponding plurality of contacts on an external integrated circuit package. The apparatus further comprises a plurality of capacitive st...
04/29/2008
7217613Low cost fabrication of high resistivity resistors
In one disclosed embodiment a layer is formed over a transistor gate and a field oxide region. For example, a polycrystalline silicon layer can be deposited over a PFET gate oxide and a silicon dioxide isolation region on the same chip. The layer is then doped over ...
05/15/2007
7098523Controlled leakage CMOS decoupling capacitor for application specific integrated circuit libraries
A decoupling capacitor includes a fixed resistance in series with the capacitor, the resistance formed by contacts connecting a polysilicon layer to metal and a diffusion layer to metal; the contacts being of location and quantity sufficient for limiting defect curr...
08/29/2006
6524897Semiconductor-on-insulator resistor-capacitor circuit
A semiconductor device may be formed with a floating body positioned over an insulator in a semiconductor structure. A gate may be formed over the floating body but spaced therefrom. The semiconductor structure may include doped regions surrounding the fl...
02/25/2003
6472942Parasitically compensated resistor for integrated circuits
A parasitically compensated resistor (50) for integrated circuits includes a substrate (52). A polysilicon resistor (54) is formed in the substrate (52). The polysilicon resistor (54) has a first end connected to a first lead (56) and a second end connect...
10/29/2002
4853759Integrated circuit filter with reduced die area
An electronic filter which has particular application for use as an antialiasing filter in sampled data systems fabricated so as to utilize high resistivity diffused regions (36, 37) within the semiconductor body (31), as opposed to low resistivity polycr...
08/01/1989
4689579Analog integrated circuit
A high-density analog integrated circuit having built-in resistor elements formed simultaneously with the formation of the base of transistor is disclosed in which a high-resistance element is formed of an ion-implanted resistor, a low-resistance element ...
08/25/1987
4553050Transmission line terminator-decoupling capacitor chip for off-chip driver
A signal transmission line terminator for an off-chip driver circuit is disclosed in which each capacitor and resistor comprising each terminator are formed on the same chip separate from the driver circuit chip. The close proximity of the elements of the...
11/12/1985
4399417Integrated CRC filter circuit
A capacitor-resistor-capacitor (CRC) element for active filter realization, which is fully integrable and compatible with MOS technology, is described. The incorporation of the CRC element in a semiconductor integrated circuit active filter also is descri...
08/16/1983
4285001Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material
A distributed resistor-capacitor device which is highly reproducible with near ideal electrical characteristics including a substrate, an insulating layer on a major surface of the substrate, and a polycrystalline semiconductor material on the insulating ...
08/18/1981
 
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