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Patent No. 6368227

Method of swinging on a swing

A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.

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Class 257/E27.044 - Including combination of diode, capacitor, or resistor (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 13
Last issue date: 05/29/2007


NumberTitleIssue Date
7224012Thin film capacitor and fabrication method thereof
A metal/insulator/metal capacitor and a fabrication method thereof are presented. The method includes forming a first electrode on an insulation film; forming a side wall made of insulating material on a side surface of the first electrode; forming an interlayer ins...
05/29/2007
6486524Ultra low Irr fast recovery diode
A FRED device having an ultralow Irr employs a contact layer which contacts spaced P diffusions in an N type silicon substrate and also contacts the silicon surface spanning between the P diffusions. The contact layer is formed of a contact hav...
11/26/2002
6215170Structure for single conductor acting as ground and capacitor plate electrode using reduced area
The device described permits selection between two design options of an integrated circuit by causing a corresponding circuit unit of the integrated circuit to adopt one of two possible different operative states. It comprises an inverter, of which the ou...
04/10/2001
6100747Device for selecting design options in an integrated circuit
The device permits selection between two design options of an integrated circuit by causing a corresponding circuit unit of the integrated circuit to adopt one of two possible different operative states. More specifically, the device provides an inverter,...
08/08/2000
5241195Merged P-I-N/Schottky power rectifier having extended P-I-N junction
A merged P-I-N/Schottky power rectifier includes trenches, and P-N junctions along the walls of the trenches and along the bottoms of the trenches. By forming the P-N junctions along the trench walls, the total area of the P-N junctions relative to the su...
08/31/1993
4636833Semiconductor device
A semiconductor device comprising a first electrode, a dielectric film and a second electrode which are stacked and formed on a semiconductor layer with the second electrode in contact with the semiconductor layer. A diode is formed of the second electrod...
01/13/1987
4170017Highly integrated semiconductor structure providing a diode-resistor circuit configuration
In an integrated circuit an improved highly integrated semiconductor structure for providing a Schottky diode-resistor circuit configuration is disclosed. Although not limited thereto, the improved highly integrated semiconductor structure has particular ...
10/02/1979
4143383Controllable impedance attenuator having all connection contacts on one side
A semiconductor device having two PIN-diodes arranged in series and in opposition, in which the semiconductor body comprises two surface zones of a first conductivity type which extend in a high-ohmic surface layer, said surface layer separating the surfa...
03/06/1979
4058887Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
A method of manufacturing an insulated gate field effect transistor comprising providing a semiconductor body portion of one type conductivity, providing on a surface of said body portion an impurity masking layer having two adjacent apertures with the po...
11/22/1977
4037243Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data
Charge is stored on the gate of a gate controlled diode in a memory element to provide a junction breakdown memory cell. A quantity of charge representative of a logical 1 or a logical 0 may be dynamically stored in one embodiment. In another embodiment a...
07/19/1977
3999205Rectifier structure for a semiconductor integrated circuit device
A rectifier structure which can be compatibly fabricated in a zone of one type conductivity in a monolithic semiconductor device includes side-by-side surface adjacent regions of mutually opposite type conductivity within and surrounded by a region of con...
12/21/1976
3946278Fail-safe four leaded zener diode arrangement
This disclosure relates to a fail-safe voltage regulating arrangement including a current limiting resistor and a four leaded zener diode having two separate conductive leads electrically connected to the cathode electrode and two other separate conductiv...
03/23/1976
3940785Semiconductor I.C. with protection against reversed power supply
A semiconductor integrated circuit includes an integrated resistor body of one conductivity type being contained in a lightly doped pocket of the opposite conductivity type. A metal contact is made to a surface portion of the lightly doped pocked forming ...
02/24/1976
 
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