A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.
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| Number | Title | Issue Date |
| 7224012 | Thin film capacitor and fabrication method thereof A metal/insulator/metal capacitor and a fabrication method thereof are presented. The method includes forming a first electrode on an insulation film; forming a side wall made of insulating material on a side surface of the first electrode; forming an interlayer ins... | 05/29/2007 |
| 6486524 | Ultra low Irr fast recovery diode A FRED device having an ultralow Irr employs a contact layer which contacts spaced P diffusions in an N type silicon substrate and also contacts the silicon surface spanning between the P diffusions. The contact layer is formed of a contact hav... | 11/26/2002 |
| 6215170 | Structure for single conductor acting as ground and capacitor plate electrode using reduced area The device described permits selection between two design options of an integrated circuit by causing a corresponding circuit unit of the integrated circuit to adopt one of two possible different operative states. It comprises an inverter, of which the ou... | 04/10/2001 |
| 6100747 | Device for selecting design options in an integrated circuit The device permits selection between two design options of an integrated circuit by causing a corresponding circuit unit of the integrated circuit to adopt one of two possible different operative states. More specifically, the device provides an inverter,... | 08/08/2000 |
| 5241195 | Merged P-I-N/Schottky power rectifier having extended P-I-N junction A merged P-I-N/Schottky power rectifier includes trenches, and P-N junctions along the walls of the trenches and along the bottoms of the trenches. By forming the P-N junctions along the trench walls, the total area of the P-N junctions relative to the su... | 08/31/1993 |
| 4636833 | Semiconductor device A semiconductor device comprising a first electrode, a dielectric film and a second electrode which are stacked and formed on a semiconductor layer with the second electrode in contact with the semiconductor layer. A diode is formed of the second electrod... | 01/13/1987 |
| 4170017 | Highly integrated semiconductor structure providing a diode-resistor circuit configuration In an integrated circuit an improved highly integrated semiconductor structure for providing a Schottky diode-resistor circuit configuration is disclosed. Although not limited thereto, the improved highly integrated semiconductor structure has particular ... | 10/02/1979 |
| 4143383 | Controllable impedance attenuator having all connection contacts on one side A semiconductor device having two PIN-diodes arranged in series and in opposition, in which the semiconductor body comprises two surface zones of a first conductivity type which extend in a high-ohmic surface layer, said surface layer separating the surfa... | 03/06/1979 |
| 4058887 | Method for forming a transistor comprising layers of silicon dioxide and silicon nitride A method of manufacturing an insulated gate field effect transistor comprising providing a semiconductor body portion of one type conductivity, providing on a surface of said body portion an impurity masking layer having two adjacent apertures with the po... | 11/22/1977 |
| 4037243 | Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data Charge is stored on the gate of a gate controlled diode in a memory element to provide a junction breakdown memory cell. A quantity of charge representative of a logical 1 or a logical 0 may be dynamically stored in one embodiment. In another embodiment a... | 07/19/1977 |
| 3999205 | Rectifier structure for a semiconductor integrated circuit device A rectifier structure which can be compatibly fabricated in a zone of one type conductivity in a monolithic semiconductor device includes side-by-side surface adjacent regions of mutually opposite type conductivity within and surrounded by a region of con... | 12/21/1976 |
| 3946278 | Fail-safe four leaded zener diode arrangement This disclosure relates to a fail-safe voltage regulating arrangement including a current limiting resistor and a four leaded zener diode having two separate conductive leads electrically connected to the cathode electrode and two other separate conductiv... | 03/23/1976 |
| 3940785 | Semiconductor I.C. with protection against reversed power supply A semiconductor integrated circuit includes an integrated resistor body of one conductivity type being contained in a lightly doped pocket of the opposite conductivity type. A metal contact is made to a surface portion of the lightly doped pocked forming ... | 02/24/1976 |