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...that after Walter Hunt patented the safety pin in 1849, he sold the rights to it for $400?
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| Number | Title | Issue Date |
| 4633291 | High-gain semiconductor device with capacitive coupling An n-type region isolated by a p-type region is formed on a p-type substrate. Within the n-type region, in order to constitute an npn-transistor, an n+ region, a p-type region and an n+ region are formed. Within the n-type region, ... | 12/30/1986 |
| 4612563 | High voltage integrated circuit High voltage integrated circuit field plates that are connected directly to the epitaxial pockets over which they lie, are formed simultaneously with high resistivity polysilicon resistors and are insulated from cross-over metal by a dual insulation of si... | 09/16/1986 |
| 4386327 | Integrated circuit Clapp oscillator using transistor capacitances An integrated circuit oscillator which includes an oscillator with an oscillation transistor being formed in a semiconductor substrate for oscillating and providing an output signal, a first junction capacitor connected between a power supply line and the... | 05/31/1983 |
| 4245231 | Combination capacitor and transistor structure for use in monolithic circuits A combination capacitor and transistor structure is described wherein the capacitor is formed integrally with the emitter electrode of the transistor. The transistor is formed in a monolithic integrated circuit using generally known techniques and constit... | 01/13/1981 |
| 4191899 | Voltage variable integrated circuit capacitor and bootstrap driver circuit An integrated circuit junction capacitor is formed using conventional bipolar transistor technology. Voltage variable capacitance is provided by a reverse biased emitter-base junction and parasitic collector-base capacitance is isolated from the emitter-b... | 03/04/1980 |
| 4190466 | Method for making a bipolar transistor structure utilizing self-passivating diffusion sources A semiconductor structure, formed within a recessed oxide isolation region, includes a semiconductor substrate of a first conductivity type within which a collector of opposite conductivity type is formed below the surface of the substrate and extending i... | 02/26/1980 |
| 4188671 | Switched-capacitor memory A memory cell comprising a single transistor and an associated capacitor constitutes the basic building block of a new and improved random-access-memory array. If, for example, the GIMIC-O technology is used for fabricating the cell, it is possible to ach... | 02/12/1980 |
| 4181981 | Bipolar two device dynamic memory cell This describes a novel bipolar dynamic cell especially useful as a Random Access Memory Cell. In the described cell a PNP transistor drives an NPN transistor so that information is stored at the base node of the PNP transistor. By using the PNP transistor... | 01/01/1980 |
| 4027271 | Capacitor structure and circuit facilitating increased frequency stability of integrated circuits A stabilizing circuit which increases the effective value of a capacitor and the structure of a monolithic capacitor are disclosed. The stabilizing circuit includes a transistor having a base electrode connected to the capacitor and an emitter electrode c... | 05/31/1977 |
| 4003076 | Single bipolar transistor memory cell and method Single bipolar transistor memory cell in which information is stored on the collector to substrate capacitance. This capacitance may be enhanced by an additional diffused region. Storage and retrieval of information is accomplished through only two leads ... | 01/11/1977 |
| 3979734 | Multiple element charge storage memory cell An integrated circuit memory system includes capacitive storage memory cells capable of storing n bits of information on n capacitors associated with multiple emitters of a bilaterally conductive bipolar transistor. Each capacitor is coupled to a separate... | 09/07/1976 |
| 3953875 | Capacitor structure and circuit facilitating increased frequency stability of integrated circuits A stabilizing circuit which increases the effective value of a capacitor and the structure of a monolithic capacitor are disclosed. The stabilizing circuit includes a transistor having a base electrode connected to the capacitor and an emitter electrode c... | 04/27/1976 |
