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| Number | Title | Issue Date |
| 5111269 | Bipolar transistor structure containing a resistor which assures reduction in layout area A N+ -type buried layer is formed at the surface of a P-type semiconductor substrate so as to correspond to the region in which a bipolar transistor is to be formed. Formed on the semiconductor substrate surface containing the buried layer port... | 05/05/1992 |
| 5010383 | Power transistor device and method for making the same A power transistor device includes a substrate arrangement defined by a collector region, a base region provided within the collector region, an elongated resistor region provided within the base region and located at about center thereof, and first and s... | 04/23/1991 |
| 4887141 | Saturation limiting system for a vertical, isolated collector PNP transistor and monolithically integrated structure thereof The structure of a vertical PNP transistor with isolated collector is modified by forming a P-type diffusion outside the perimeter of a sinker collector diffusion to form an auxiliary collector capable of detecting the injection of current toward the subs... | 12/12/1989 |
| 4829360 | Monolithic integrated semiconductor means to reduce power dissipation of a parasitic transistor A semiconductor means is integrated monolithically on a substrate and comprises at least one power diode (3), its cathode being at a higher potential (6) than the potential (5) of the substrate. Its anode forms the emitter and its cathode forms the base o... | 05/09/1989 |
| 4814852 | Controlled voltage drop diode A diode having an increased diode voltage drop is provided through the use of an extra collector-base contact which is left electrically floating. By leaving the extra collector-base contact electrically floating, a voltage divider effect results which pr... | 03/21/1989 |
| 4782378 | Transistor having integrated stabilizing resistor and method of making thereof A resistively stabilized transistor in which secondary breakdown is prevented by the insertion of a floating emitter protection region around only one end of a stabilizing resistive region. The transistor includes an ordinary emitter region located within... | 11/01/1988 |
| 4689655 | Semiconductor device having a bipolar transistor with emitter series resistances An integrated circuit or other semiconductor device, comprises a semiconductor body with a bipolar transistor consisting of electrically parallel transistor structures at least a number of which have a different value of emitter series resistance. The tra... | 08/25/1987 |
| 4613887 | Semiconductor device with a means for discharging carriers In an output transistor of transistor-transistor logic (TTL) circuits, an output transistor of TTL is provided with, in a region between a p-type base region and the p-type semiconductor substrate on which a TTL circuit is fabricated, a p- diff... | 09/23/1986 |
| 4547743 | Variable resistance gain control integrated circuit A variable resistance gain control integrated circuit has a resistor inserted between the emitters of two transistors serving as a differential pair, and two transistors which serve as an active load and have their emitters connected to the emitters of th... | 10/15/1985 |
| 4510517 | Electronically controlled variable semiconductor resistor An electronically controlled variable semiconductor resistor having a three layer construction of either an NPN-type or a PNP-type which is similar to that of a bipolar transistor and basically using the base region and collector region of the transistor ... | 04/09/1985 |
| 4486770 | Isolated integrated circuit transistor with transient protection An integrated circuit having a bipolar transistor with an integral base region resistor. The resistor coacts with an isolation wall extension in the integrated circuit to provide compact integral protection against transient polarity reversal between cont... | 12/04/1984 |
| 4463370 | Semiconductor device for use in memory cells An integrated circuit element which is laterally insulated by oxide includes a transistor and a resistor. The resistor is formed by an elongation of the base and includes an emitter of the transistor. A pinching zone is present beneath the emitter and is ... | 07/31/1984 |
| 4446611 | Method of making a saturation-limited bipolar transistor device A saturation-limited bipolar transistor device or circuit and a method of making same are provided which includes a merged NPN transistor and a PNP transistor structure formed so as to produce denser cells or circuits. A simple process is used to form the... | 05/08/1984 |
| 4390890 | Saturation-limited bipolar transistor device A saturation-limited bipolar transistor device or circuit and a method of making same are provided which includes a merged NPN transistor and a PNP transistor structure formed so as to produce denser cells or circuits. A simple process is used to form the... | 06/28/1983 |
| 4376985 | Semiconductor memory device A semiconductor memory device including memory cells, formed by a pair of multi-emitter transistors each having a collector and a base which are cross connected to each other and arranged in row and column directions, and read-out transistors, each having... | 03/15/1983 |
| 4360822 | Semiconductor device having an improved semiconductor resistor A semiconductor device such as an integrated Darlington circuit includes a mesa which is bounded by two parallel grooves which extend into the device substrate. A semiconductor resistor is formed in the mesa and extends from the mesa surface down to a bur... | 11/23/1982 |
| 4346458 | I2 L Monolithically integrated storage arrangement Monolithically integrated storage arrangement with storage cells arranged in a matrix and consisting of two cross-coupled I2 L structures (T1, T2 and T1', T2') each in the manner of a flip-flop, wherein the read signal is derived from the charg... | 08/24/1982 |
| 4329703 | Lateral PNP transistor Shallow, boron implanted regions are formed by ion implanting. Disclosed is a PNP transistor device (lateral type) having a P type emitter region preferably made with a boron implant.... | 05/11/1982 |
| 4309762 | Semiconductor memory apparatus A semiconductor memory apparatus is formed of a plurality of memory cells, each of which is connected to a first word line and a second word line. According to the present invention, emitters of the transistors by which the hold current of the memory cell... | 01/05/1982 |
| 4283641 | Feedback biasing circuit arrangement for transistor amplifier A circuit suitable for providing constant current bias for I.C's includes two transistors arranged to pass current in parallel in which base emitter voltage applied to one transistor is derived from the base emitter voltage applied to the other transistor... | 08/11/1981 |
| 4255674 | Semiconductor device having a multiple-emitter transistor A semiconductor device includes a bipolar transistor having at least two emitter zones. One of the emitter zones is divided into two separate sub-zones, which are separated by a conductive channel which connects the base zone to an adjoining resistive zon... | 03/10/1981 |
| 4231056 | Moat resistor ram cell A RAM cell having a pair of transistors formed in two adjacent wells laterally separated from each other and surrounded laterally by a common doped polycrystalline semiconductor moat. Dielectrical insulation separate the wells from the moat. The moat is d... | 10/28/1980 |
| 4228451 | High resistivity semiconductor resistor device This disclosure relates to a low power write-once, read-only semiconductor memory (PROM or programmable read only memory) array wherein the semiconductor resistors located in the word line decoder and driver and also in the bit line decoder and sense ampl... | 10/14/1980 |
| 4202005 | Distributed collector ballast resistor structure A distributed collector ballast resistor structure for use in a distributed collector contacted transistor comprises a diffusion geometry which is designed to employ a number of distributed collector ballast resistors in parallel as opposed to a single bu... | 05/06/1980 |
| 4196228 | Fabrication of high resistivity semiconductor resistors by ion implanatation This disclosure relates to a low power write-once, read-only semiconductor memory (PROM or programmable read only memory) array wherein the semiconductor resistors located in the word line decoder and driver and also in the bit line decoder and sense ampl... | 04/01/1980 |
| 4181878 | Integrated-circuit chip with voltage divider A voltage divider with at least two intermediate taps of almost the same potential is formed in an integrated-circuit chip by diffusing P-type impurities into an N-type substrate along a narrow strip zone ending in enlarged terminal areas. The strip zone ... | 01/01/1980 |
| 4167748 | High voltage monolithic transistor circuit Disclosed is a monolithic transistor circuit for high voltage applications. A high impedance bleed resistor is effectively provided across the emitter-base junction of one of the transistors. This is accomplished by placing the base regions of this and an... | 09/11/1979 |
| 4160990 | Semiconductor devices and circuit arrangements including such devices A circuit arrangement at least partially embodied in a collector-diffusion-isolation (CDI) type device, in a semiconductor body comprising a thin layer initially wholly of one conductivity type on a substrate of the same conductivity type, has at least on... | 07/10/1979 |
| 4136355 | Darlington transistor In a device of Darlington connection of transistors formed on one monolithic substrate, wherein the substrate has a collector region of a first conductivity and a base region of a second conductivity, the collector region and the base region forming a P-N... | 01/23/1979 |
| 4123672 | Circuit arrangement for frequency division of high-frequency pulses A circuit arrangement for the frequency division of high frequency pulses in which a cyclic sequence of transistors are connected together via tapped resistances. In integrated circuit technology the tapped resistances may be the parasitic resistance of a... | 10/31/1978 |
| 4054898 | Switching system to short-circuit a load with minimum residual voltage A controlled main switch, typically a semiconductor switch, is connected in parallel to the load. In accordance with the invention, an auxiliary switch, typically also a semiconductor switch such as a switching transistor is directly connected across the ... | 10/18/1977 |
| 4028563 | Integrated zener diode This invention relates to an integrated zener diode having a breakdown voltage of less than about 5 volts. In order to achieve predetermined breakdown voltages within a small gap in the mass production independent of the bulk resistivity fluctuations, the... | 06/07/1977 |
| 4016596 | High performance integrated bipolar and complementary field effect transistors A method for fabricating both bipolar as well as complementary MOS field effect transistors, i.e., BI-CMOS transistors in the same semiconductor substrate. The preferred embodiment of the method provides bipolar and CMOS transistors having breakdown volta... | 04/05/1977 |
| 4005470 | Triple diffused logic elements In a semiconductor structure, a semiconductor body of one conductivity type having a planar surface and a first region of opposite conductivity formed in said body and extending to said surface. Spaced second, third and fourth regions of one conductivity ... | 01/25/1977 |
| 4004160 | Switching system to short-circuit a load with minimum residual voltage A controlled main switch, typically a semiconductor switch, is connected in parallel to the load. In accordance with the invention, an auxiliary switch, typically also a semiconductor switch such as a switching transistor is directly connected across the ... | 01/18/1977 |
| 3988759 | Thermally balanced PN junction Regions of high resistivity, with respect to the surrounding material, are designed into a semiconductor device at points where hot-spots have been observed. A device made in this manner has very good second breakdown characteristics. One application is i... | 10/26/1976 |
| 3979612 | V-groove isolated integrated circuit memory with integral pinched resistors A semiconductor integrated circuit having microminiature active and/or passive elements in which a crystallographic surface of a semiconductor body lies in the [100] crystallographic plane and anisotropically etched regions with sloped [111] crystallograp... | 09/07/1976 |
| 3971060 | TTL coupling transistor An improved TTL coupling transistor structure wherein a pair of lateral extensions of the base region and overlying opposite type conductivity low resistivity regions provide a pair of resistance-distributed diode elements interconnecting the base and col... | 07/20/1976 |
| 3971058 | Dual emitter programmable memory element and matrix A plurality of dual emitter integrated circuit transistor elements in a single substrate having emitters interconnected to form a matrix is programmed by passing current between emitters of selected elements to short one base-emitter junction or to short ... | 07/20/1976 |
| 3955269 | Fabricating high performance integrated bipolar and complementary field effect transistors A method for fabricating both bipolar as well as complementary MOS field effect transistors, i.e., BI-CMOS transistors in the same semiconductor substrate. The preferred embodiment of the method provides bipolar and CMOS transistors having breakdown volta... | 05/11/1976 |
