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| Number | Title | Issue Date |
| 6674147 | Semiconductor device having a bipolar transistor structure Formed on the surface of an n-type semiconductor layer (21) taken as a collector region is a base region (22) consisting of a p-type region, and formed in the p-type region is an emitter region (23) consisting of an n+ -type region. Further, pr... | 01/06/2004 |
| 6642605 | Semiconductor device and a process for producing same In a semiconductor device having a junction type diode using a bipolar transistor and a process for producing the same, a ratio of a diode electric current to a leakage electric current is improved, and latch up resistance is improved without increasing t... | 11/04/2003 |
| 6521973 | Semiconductor device with integrated power transistor and suppression diode A semiconductor device comprises a semiconductor body (10) in and on which a power transistor (T; 1, 2, 3) and a suppression diode (D; 100) are integrated. A diode junction (40; 40') is present between the back metallization (22) and the adjacent region (... | 02/18/2003 |
| 6445057 | Semiconductor device having a trimming circuit for suppressing leakage current In a semiconductor device having a junction type diode using a bipolar transistor and a process for producing the same, a ratio of a diode electric current to a leakage electric current is improved, and latch up resistance is improved without increasing t... | 09/03/2002 |
| 6288428 | Semiconductor integrated circuit device for disk drive apparatus A semiconductor integrated circuit device for a magnetic drive apparatus has a driver for supplying an electric current to a motor including an inductance coil, a pad for receiving or outputting a signal from or to outside, and a protection diode connecte... | 09/11/2001 |
| 6208012 | Zener zap diode and method of manufacturing the same The invention provides a zener zap diode having a high reliability and a method of manufacturing the same that can remove the problems accompanied with the zener zap trimming. In order to attain the object, the zener zap diode according to the invention i... | 03/27/2001 |
| 6060763 | Semiconductor device and method for producing same A semiconductor device has formed onto the surface of a collector region 12 of a semiconductor substrate 11 of one conductivity type with a base region 13 of a different conductivity type, an emitter region 16 of the one conductivity type formed on a surf... | 05/09/2000 |
| 5969400 | High withstand voltage semiconductor device A semiconductor device includes a first semiconductor layer of a first conductivity type having first and second main surfaces, a second semiconductor layer of a second conductivity type selectively formed on the first main surface of the first semiconduc... | 10/19/1999 |
| 5838057 | Transistor switches An electronic switch (80) having a transistor (T) and a diode (D) formed on a substrate (82) is provided. The electronic switch (80) includes a common transistor collector and diode cathode region (81) of a first conductivity type formed in the substrate ... | 11/17/1998 |
| 5545914 | Semiconductor device having zener diodes with temperature stability between base and collector regions A plurality of Zener diodes are connected between two electrodes of a transistor as the protector of the transistor to obtain a predetermined breakdown voltage. Each Zener diode has a breakdown of 5 V whose temperature coefficient is substantially zero.... | 08/13/1996 |
| 5468660 | Process for manufacturing an integrated bipolar power device and a fast diode A bipolar power device and a fast diode are formed in a single chip of semiconductor material. The chip contains a first area having high minority carrier lifetimes in which the bipolar power device is formed. The bipolar power device is therefore capable... | 11/21/1995 |
| 5410177 | Planar semiconductor and Zener diode device with channel stopper region A planar semiconductor device having a heavily doped channel stopper region of the first conductivity type and at least the following components: a Zener diode having the following regions, seen from an upper surface of the device, an upper diode region o... | 04/25/1995 |
| 5343068 | Integrated bipolar power device and a fast diode A bipolar power device and a fast diode are formed in a single chip of semiconductor material. The chip contains a first area having high minority carrier lifetimes in which the bipolar power device is formed. The bipolar power device is therefore capable... | 08/30/1994 |
| 4942440 | High voltage semiconductor devices with reduced on-resistance A high voltage P-N diode includes a P- substrate with a thin N- epitaxial layer thereon. An N+ cathode region extends into the N- epitaxial layer from the upper surface thereof. A P+ anode region exte... | 07/17/1990 |
| 4894622 | Integrated current-mirror arrangement comprising vertical transistors An integrated current-mirror arrangement comprises a first and a second transistor whose bases are interconnected and connected to the collector of the first transistor. The transistors are constructed as vertical transistors each having a collector regio... | 01/16/1990 |
| 4689651 | Low voltage clamp A low voltage clamp circuit comprises a transistor and semiconductor junction impedance circuitry for establishing an impedance such that the magnitude of a voltage applied across the emitter and collector of the transistor is clamped at a value that is l... | 08/25/1987 |
| 4652895 | Zener structures with connections to buried layer A buried zener diode of reduced noise, bulk resistance and dynamic resistance, formed in an N- layer having a H+ layer buried, including a P+ surface anode of greater lateral area than an N+ cathode which is connected to a surface contact through the buri... | 03/24/1987 |
| 4530000 | Bipolar transistor with protective diode in collector A semiconductor device, comprising a semiconductor body with a bipolar transistor with a collector zone which is formed by a part of a semiconductor region, a base zone and an emitter zone which is embedded in the base zone. The base zone is connected to ... | 07/16/1985 |
| 4482911 | Monolithic integrated circuit equivalent to a transistor associated with three antisaturation diodes A monolithic integrated circuit equivalent to a transistor associated with three antisaturation diodes and a method of fabrication of the circuit comprising an npn structure which is substantially identical with a Darlington circuit. The upper portion of ... | 11/13/1984 |
| 4312046 | Vertical fuse and method of fabrication In a memory array wherein each cell includes an emitter follower, a diode is formed on the emitter by a thin layer which is capable of being shorted by vertical migration of bit line atoms through the layer and into the emitter region. The thin layer is f... | 01/19/1982 |
| 4287569 | Semiconductor memory device In a semiconductor memory device having a plurality of memory cells located at a cross position of a plurality of bit lines and a plurality of word lines, the memory cell comprising a series circuit of an information storing element such as a diode or a f... | 09/01/1981 |
| 4276556 | Semiconductor device A semiconductor device including a diode and a bipolar transistor which are connected to each other and formed in an isolated area of a semiconductor layer has a diffused region formed between a base region of the bipolar transistor and a formation region... | 06/30/1981 |
| 4249192 | Monolithic integrated semiconductor diode arrangement A semiconductor diode for use in a double plug glass housing is formed in a planar arrangement having two transistor structures, one of which is diode-connected by connecting the base to the collector, and the other of which has no emitter region. Both tr... | 02/03/1981 |
| 4249262 | Tunable microwave oscillator A tunable microwave oscillator including a transistor with a tuning diode which form an oscillating circuit particularly for use in television tuners and which does not require an inductor. A novel combination of an oscillator and mixer is also provided a... | 02/03/1981 |
| 4150344 | Tunable microwave oscillator A tunable microwave oscillator including a transistor with a tuning diode which form an oscillating circuit particularly for use in television tuners and which does not require an inductor. A novel combination of an oscillator and mixer is also provided a... | 04/17/1979 |
| 4119440 | Method of making ion implanted zener diode A method of making a zener diode having an accurately predetermined breakdown voltage. A discrete device and integrated circuit adaptation of this device is disclosed. A specially highly doped opposite conductivity type island is embedded in a high resist... | 10/10/1978 |
| 4096400 | Inductive load driving amplifier An inductive load driving amplifier is disclosed which includes two serially connected transistors, with Zener diodes limiting the collector-emitter voltage of the one and diverting the collector-base current of the other when the first one switches off. ... | 06/20/1978 |
| 4051504 | Ion implanted zener diode A zener diode having an accurately predetermined breakdown voltage, and a method of making such a zener diode. A discrete device and integrated circuit adaptation of this device is disclosed. A specially highly doped opposite conductivity type island is e... | 09/27/1977 |
| 4035670 | Transistor stored charge control using a recombination layer diode The on-to-off switching time of a junction transistor is reduced by forward connecting a recombination layer diode between the base and collector of the transistor. Preferably, the diode comprises a semiconductor abrupt junction of the type having a relat... | 07/12/1977 |
| 4035827 | Thermally ballasted semiconductor device A semiconductor device comprising a plurality of cells is disclosed. Each cell contains at least one bi-polar transistor and a diode serially connected to the base of the transistor therein. Each cell is connected in parallel relation with each other cell... | 07/12/1977 |
| 4032958 | Semiconductor device An NPN-type bipolar transistor is disclosed which has an additional P-type conductivity in its emitter region. The current-amplification factor hFE of the transistor is high when the additional region is electrically floated, while the amplific... | 06/28/1977 |
| 4032957 | Semiconductor device A semiconductor device having a high emitter-grounded current gain which includes an emitter region with the minority carrier diffusion length greater than its width and an additional region adjacent to the emitter region with the minority carrier diffusi... | 06/28/1977 |
| 4032956 | Transistor circuit A transistor circuit is disclosed in which a region with opposite conductivity type to that of an emitter region or a MOS type structure is disposed adjacent to the emitter region within the diffusion length from an emitter-base junction. A gain control c... | 06/28/1977 |
| 4017882 | Transistor having integrated protection An integrated transistor device has reverse bias breakdown protection for both the base-collector PN junction and the base-emitter PN junction. The base-emitter PN junction is protected by means of a diode effectively in parallel relation therewith, and t... | 04/12/1977 |
| 3943554 | Threshold switching integrated circuit and method for forming the same A high speed threshold switching integrated circuit including a transistor and an integrally formed tunnel diode connected in parallel between the base and emitter of the transistor. The heavy doping necessary for the tunnel diode is achieved through the ... | 03/09/1976 |
| 3936862 | MISFET and method of manufacture A novel MISFET and method of manufacture involving a five mask process suitable for making N-channel devices alone, P-channel devices alone or both N and P-channel devices simultaneously. Novel topside contact means, field inversion protection means and g... | 02/03/1976 |
