Celebrity Inventors
Comic actor Danny Kaye received patent D166,807 for the co-design of "Blowout Toy or the Like". It's similar to one of those toys that unravels when you blow into at a birthday party except Kaye's has three blowouts going in different directions, not just one.
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| Number | Title | Issue Date |
| 6320232 | Integrated semiconductor circuit with protective structure for protection against electrostatic discharge An integrated semiconductor circuit has a protective structure for protection against electrostatic discharge. The protective element has at least one integrated vertical protective transistor whose load path is connected between the terminal pad of the d... | 11/20/2001 |
| 6194764 | Integrated semiconductor circuit with protection structure for protecting against electrostatic discharge An integrated semiconductor circuit has a protection structure for protecting against electrostatic discharge. The protection element has at least one integrated vertical protection transistor, whose load path is connected between the terminal pad and a p... | 02/27/2001 |
| 5986290 | Silicon controlled rectifier with reduced substrate current The invention provides a silicon controlled rectifier having an anode and a cathode and including an NPN transistor and a PNP transistor. The NPN transistor has an emitter coupled to the cathode, a base and a collector. The PNP transistor has a base coupl... | 11/16/1999 |
| 5834823 | Transistor with constant voltage diode A power transistor incorporating a constant-voltage diode maintains the breakdown voltage of the constant-voltage diode at a specified level and prevents local breakdown of an insulating film located between an A1 field plate electrode and a base region o... | 11/10/1998 |
| 5469103 | Diode circuit for high speed switching transistor A semiconductor device, comprising a transistor, a constant voltage diode having a first end of a first conductivity type connected to an emitter of the transistor and a second end of a second conductivity type, a reverse current preventive diode having a... | 11/21/1995 |
| 5349230 | Diode circuit for high speed switching transistor A semiconductor device, comprising a transistor, a constant voltage diode having a first end of a first conductivity type connected to an emitter of the transistor and a second end of a second conductivity type, a reverse current preventive diode having a... | 09/20/1994 |
| 5289043 | Switching system for selectively enabling electrical power to be applied to plural loads There is described a semiconductor switch device having two semiconductor components, the first component receiving drive signals from the second. The first component contains either a single power bipolar switch element for single ended control of the en... | 02/22/1994 |
| 5017503 | Process for making a bipolar transistor including selective oxidation An integrated circuit device of large scale integration and a method of manufacturing the same makes possible high density packing of circuit elements by eliminating a great number of very minute contact holes. Instead, a circuit-element connector compris... | 05/21/1991 |
| 4977476 | Semiconductor switch There is described a semiconductor switch device having two semiconductor components, the first component receiving drive signals from the second. The first component contains either a single power bipolar switch element for single ended control of the en... | 12/11/1990 |
| 4943742 | Schottky barrier diode clamp transistor A semiconductor device used for, particularly, an output stage of a logic circuit is formed by a Schottky.barrier.diode clamping transistor. A clamping circuit is provided between a collector and a base for clamping a collector potential. The clamping cir... | 07/24/1990 |
| 4924286 | Semiconductor device A Darlington power transistor comprising two transistors (Q1, Q2) has a clip diode (Di) for clipping high surge voltage. A field plate (9a) is formed in a surface of a channel cut region (8) existing in peripheral portion ... | 05/08/1990 |
| 4815037 | Bipolar type static memory cell A bipolar type static memory cell comprising two cross connected circuits, each of the circuits including a transistor and a load element is disclosed. An N-type epitaxial layer, grown on an N+ -type buried layer, is used as a collector region ... | 03/21/1989 |
| 4800416 | Bipolar power transistor having bypassable incorporated-base ballast resistance The ballast resistance of the base of a bipolar power transistor is realized by a localized pinching of the base region by means of a special diffused region. A surface metallization brings the diffused region into contact with the adjacent base region so... | 01/24/1989 |
| 4617524 | Integrated amplifier circuit having RC network to suppress oscillation An integrated amplifier circuit which includes a semiconductor substrate, an amplifier transistor fabricated on the substrate, and an RC network fabricated on the substrate to suppress undesired, self-excited oscillations, the RC network being connected b... | 10/14/1986 |
| 4599631 | Semiconductor apparatus having a zener diode integral with a resistor-transistor combination A semiconductor apparatus includes a p+ -type region formed in the surface area of an n- -type semiconductor layer formed on a p-type semiconductor substrate, and an n+ -type region which is formed in a contact relationshi... | 07/08/1986 |
| 4577123 | Integrated logic circuit having collector node with pull-up and clamp A logic circuit of the I2 L, the ISL or the STL type having a signal input formed by the control electrode of an inverter transistor and plural signal outputs each coupled through a diode to a main electrode of the inverter transistor, this mai... | 03/18/1986 |
| 4550390 | Semiconductor memory device A semiconductor memory having a construction making it less susceptible to -rays. The memory includes a pair of transistors connected in a flip-flop arrangement. In each memory transistor there is a buried region of high concentration which contact... | 10/29/1985 |
| 4538244 | Semiconductor memory device A semiconductor memory device in which a bipolar memory cell includes two cross-coupled transistors. The collector load is a Schottky barrier diode. A capacitor is formed to be connected to the Schottky barrier diode. The capacitor is formed by a junction... | 08/27/1985 |
| 4456920 | Semiconductor device A semiconductor device including at least first and second transistors having their respective emitter regions of a first conductivity type formed in a common base layer of a second conductivity type, the semiconductor device comprising a first electrode ... | 06/26/1984 |
| 4450470 | Semiconductor integrated circuit device An integrated circuit device of large scale integration and a method of manufacturing the same makes possible high density packing of circuit elements by eliminating a great number of very minute contact holes. Instead, a circuit-element connector compris... | 05/22/1984 |
| 4398206 | Transistor with integrated diode and resistor A semiconductor device including a transistor, diode and resistor comprises a body of semiconductor material formed with conventional emitter, base and collector regions. The collector region forms one electrode of the diode with the other electrode being... | 08/09/1983 |
| 4388636 | Static memory cell and memory constructed from such cells A static cross-coupled bipolar memory cell has a large read current/stand-by current ratio and short write time. The nonlinear load element includes a resistor with a parallel-connected pnp transistor serving as a diode and an inversely-operating npn tran... | 06/14/1983 |
| 4314359 | Semiconductor memory device The invention relates to an improvement in a semiconductor memory device including flip-flop type memory cells, each memory cell consisting of a pair of cross-coupled multi-emitter transistors. The semiconductor memory device of the invention is character... | 02/02/1982 |
| 4293868 | Semiconductor device, method of manufacturing the same and application thereof This invention relates to a power transistor which includes a driving transistor and an output transistor in the Darlington connection. This invention has for its object to prevent the power transistor from being destroyed by a surge in such a way that a ... | 10/06/1981 |
| 4288807 | Darlington circuit having an improved diode drain In a Darlington circuit with integrated speed-up diode the parasitic four-layer effect (p-n-p-n), which is detrimental to the circuit, is removed by giving the diode a divided configuration. The width of the sub-regions is chosen to be so small that the s... | 09/08/1981 |
| 4285001 | Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material A distributed resistor-capacitor device which is highly reproducible with near ideal electrical characteristics including a substrate, an insulating layer on a major surface of the substrate, and a polycrystalline semiconductor material on the insulating ... | 08/18/1981 |
| 4260910 | Integrated circuits with built-in power supply protection To provide an integrated circuit with protection against overvoltage and overcurrent conditions, the channel of a field effect transistor is connected between the d.c. supply conductor for the integrated circuit and a further conductor for connection to o... | 04/07/1981 |
| 4187516 | Semiconductor integrated circuits A semiconductor integrated circuit which is reduced in size by having active and/or passive elements in an epitaxial layer having a [100] crystallographic surface, and having anisotropically etched regions with sloped [111] crystallographic surface walls ... | 02/05/1980 |
| 4159915 | Method for fabrication vertical NPN and PNP structures utilizing ion-implantation A method is given for fabricating vertical NPN and PNP structures on the same semiconductor body. The method involves providing a monocrystalline semiconductor substrate having regions of monocrystalline silicon isolated from one another by isolation regi... | 07/03/1979 |
| 4100561 | Protective circuit for MOS devices The circuit protects the oxide of MOS devices from destructive breakdown by limiting the potential difference which can exist between two circuit nodes. By forming a protective circuit between each pair of nodes in the circuit, the range of voltages which... | 07/11/1978 |
| 4048517 | Logic element A logic element, particularly a bipolar gate circuit for an LSI-circuit, employing a pair of Schottky-diodes, a pair of resistances and a transistor, with the diodes, connected in high resistance direction, to respective inputs, the other sides of the dio... | 09/13/1977 |
| 4039857 | Dynamic biasing of isolation boat including diffused resistors A diode current steering network is fabricated in minimum area in a monolithic integrated circuit by dynamically biasing an isolation boat wherein are contained diffused resistors connected to the various circuit points to which current is to be steered.... | 08/02/1977 |
| 4025802 | Capacitance circuit In a capacitance circuit having a capacitance element which exhibits a breakdown characteristic and which generates noises at breakdown, the improvement comprising a constant-voltage element, which has a lower breakdown voltage than the capacitance elemen... | 05/24/1977 |
| 3999080 | Transistor coupled logic circuit A TTL logic circuit employing single emitter PNP input transistors instead of a multi-emitter input stage, in order to reduce loading on input drive devices. The circuit features a logic swing of 1.6 volts centered on a circuit threshold of 1.6 volts with... | 12/21/1976 |
| 3962590 | TTL compatible logic gate circuit A logic gate circuit includes a resistance divider input to the base of an input transistor and a multiple emitter output transistor in an emitter follower configuration. The circuit has favorable switching speed and power dissipation characteristics and ... | 06/08/1976 |
| 3962718 | Capacitance circuit In a capacitance circuit having a capacitance element which exhibits a breakdown characteristic and which generates noises at breakdown, the improvement comprising a constant-voltage element, which has a lower breakdown voltage than the capacitance elemen... | 06/08/1976 |
| 3936863 | Integrated power transistor with ballasting resistance and breakdown protection An integrated power transistor has at least one emitter region, having a ballasting resistance to reduce the possibility of second breakdown. Also integrated within the device is a voltage control diode, located between the collector terminal and the emit... | 02/03/1976 |
