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Class 257/E27.037 - Bipolar transistor in combination with diode, capacitor, or resistor (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 16
Last issue date: 06/03/2008


NumberTitleIssue Date
7382025ESD protection structure with lower maximum voltage
A semiconductor structure for protecting integrated circuits from ESD pulses includes a semiconductor substrate of a first conductivity type and with a first dopant concentration. A well of a second conductivity type and with a second dopant concentration lies withi...
06/03/2008
6642605Semiconductor device and a process for producing same
In a semiconductor device having a junction type diode using a bipolar transistor and a process for producing the same, a ratio of a diode electric current to a leakage electric current is improved, and latch up resistance is improved without increasing t...
11/04/2003
5514901Epitaxial island with adjacent asymmetrical structure to reduce collection of injected current from the island into other islands
In an integrated circuit in which a first PN-junction-isolated island may momentarily become forward biased with respect to the surrounding substrate and inject unwanted charge that is collected by second islands adjacent one side of a first island, the i...
05/07/1996
5023482ISL to TTL translator
An ISL clamped NPN transistor and a PNP interface transistor are merged together in a single semiconductive isolation island. The two transistors are laterally separated from each other along a semiconductive surface of the island, which also includes one...
06/11/1991
4716314Integrated circuit
A high speed I2 L circuit having a topology which is based on a layout of parallel arranged gate circuits in which the inverter transistors of each gate circuit are arranged in a row and below the signal lines to which they are connected, said ...
12/29/1987
4595942Integrated circuit
A compact integrated logic circuit having an inverter transistor and several coupling diodes adjoining the collector region of said transistor. Current is applied to the base of the transistor which forms the signal input. The inverter transistor has addi...
06/17/1986
4567501Resistor structure in integrated injection logic
An I2 L semiconductor device in which a p-type buried layer is formed on an n+ type silicon substrate by diffusion of boron, an epitaxial n-type layer is grown on the p-type buried layer, a p+ type region is formed in a ...
01/28/1986
4380021Semiconductor integrated circuit
A semiconductor integrated circuit with a short turn-off time in which a high breakdown voltage semiconductor element and a Schottky barrier diode are fabricated into a semiconductor substrate, is disclosed. In the integrated circuit, within a semiconduct...
04/12/1983
4288805Integrated logic gate with NPN inverter, PNP clamp, coupling, Shottky diodes and diffused crossunder
A logic element structure suitable for high density integration including a vertical NPN transistor, a lateral PNP anti-saturation transistor, and a Schottky diode coupled to the collector of the NPN transistor and providing a logic element output. The lo...
09/08/1981
4199775Integrated circuit and method for fabrication thereof
An integrated transistor circuit arrangement provides a multicollector transistor with Schottky diodes and ohmic connections selectively formed at the collector terminals. In the illustrative example, a vertical transistor is formed in an N-type epitaxial...
04/22/1980
4131806I.I.L. with injector base resistor and schottky clamp
This invention relates to an inverter with a lateral bipolar pnp (npn) transistor and a vertical, bipolar npn (pnp) transistor which vertical transistor has at least one collector. The collector of the lateral transistor is connected integrally with the b...
12/26/1978
4100564Power transistor device
A power transistor device having a circuit provided with first, second, third and fourth transistors, wherein the first and the second transistors are connected in the Darlington configuration while the third and the fourth transistors are connected respe...
07/11/1978
4076556Method for fabrication of improved bipolar injection logic circuit
An integrated transistor circuit arrangement provides a multicollector transistor with Schottky diodes and ohmic connections selectively formed at the collector terminals. In the illustrative example, a vertical transistor is formed in an N-type epitaxial...
02/28/1978
4053923Integrated logic elements with improved speed-power characteristics
Transistor logic elements with improved switching speed at a given power. The improvement arises from shunting the current-source transistor in a two-transistor gate by a resistor. The integrated embodiment requires no more area than the conventional stru...
10/11/1977
3988569Thermal printhead with memory
A latching circuit is used in a thermal printhead matrix. The heater circuit in each mesa or element of the matrix, once energized by input logic signals, is thereafter independent of changes in the input logic signal levels and remains energized until th...
10/26/1976
3979734Multiple element charge storage memory cell
An integrated circuit memory system includes capacitive storage memory cells capable of storing n bits of information on n capacitors associated with multiple emitters of a bilaterally conductive bipolar transistor. Each capacitor is coupled to a separate...
09/07/1976
 
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