Did You Know...
...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 5866461 | Method for forming an integrated emitter switching configuration using bipolar transistors A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partia... | 02/02/1999 |
| 5475243 | Semiconductor device including an IGBT and a current-regenerative diode An insulated-gate bipolar transistor (IGBT) is connected in reverse-parallel with a current-regenerative diode which, for economy of manufacture, is integrated with the IGBT. Such a diode may extend laterally on an IGBT chip, with two conductivity regions... | 12/12/1995 |
| 5181083 | PIN diode with a low peak-on effect A PIN diode with a low voltage peak at the switching on comprises a P-type anode region (4) formed on a first surface of a low doped N-type substrate (1) and a cathode region (2) formed on the second surface of the substrate. The PIN diode comprises on a ... | 01/19/1993 |
| 4825272 | Semiconductor power switch with thyristor A power switch device comprises an asymmetrically blocking thyristor (ASCR), with which a diode is connected in series. The ASCR as well as the diode require only about one half the central zone thickness as compared with a symmetrically blocking thyristo... | 04/25/1989 |
| 4631567 | PNPN integrated circuit protective device with integral resistor A semiconductor device comprises an internal circuit and an electrostatic destruction preventing circuit connected between a predetermined electrical potential point and a signal input terminal with respect to the internal circuit. The electrostatic destr... | 12/23/1986 |
| 4567500 | Semiconductor structure for protecting integrated circuit devices Disclosed is a protection circuit which may be used, for example, in a television receiver to protect circuitry inside an integrated circuit from damage due to high voltage transients. The protection circuit comprises a PNPN structure forming a silicon co... | 01/28/1986 |
| 4520277 | High gain thyristor switching circuit A three terminal power switch utilizing a lateral thyristor switching circuit is disclosed which exhibits very high gain for both turn-on and turn-off. The gate turn-off capability of the lateral thyristor is accomplished utilizing a secondary shunting th... | 05/28/1985 |
| 3979766 | Semiconductor device A semiconductor device is disclosed which comprises a first region of a first conductivity type, a second region of a second conductivity type and adjacent to said first region, a third region of the first conductivity type and adjacent to fifth regions o... | 09/07/1976 |
