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"That the automobile has practically reached the limit of its development is suggested by the fact that during the past year no improvements of a radical nature have been introduced."
Scientific American ; Jan. 2 edition, 1909
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| Application No. | Application Title | Issue Date |
| 20080067599 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME The semiconductor device includes a first MIS transistor including a gate insulating film 92, a gate electrode 108 formed on the gate insulating film 92 and source/drain regions 154, a second MIS transistor including a gate insulating film 03/20/2008 | |
| 20070178636 | Method of manufacturing semiconductor device The invention provides a method of manufacturing a semiconductor device having a semiconductor resistor layer, which reduces a difference between a theoretical resistance value and a measured resistance value. An interlayer insulation film is formed on the whole surface... | 08/02/2007 |
| 20070108533 | Integrated Circuit Having a Multipurpose Resistor for Suppression of a Parasitic Transistor or Other Purposes A composite integrated circuit incorporating two LDMOSFETs of unlike designs, with the consequent creation of a parasitic transistor. A multipurpose resistor is integrally built into the composite integrated circuit in order to prevent the parasitic transistor from acci... | 05/17/2007 |
| 20070069299 | THIN FILM RESISTORS INTEGRATED AT A SINGLE METAL INTERCONNECT LEVEL OF DIE An integrated circuit structure includes a first dielectric layer disposed on a semiconductor layer, a first thin film resistor disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the first thin film resistor, and... | 03/29/2007 |
