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Patent No. 6650315

Mouse device with a built-in printer

A mouse device for use as an input device of a computer is provided that includes a housing in which recording paper is loadable, and a printer unit provided within the housing for printing on the recording paper print information received from the computer.

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Class 257/E27.034 - In combination with capacitor only (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of applications: 8
Last issue date: 01/19/2012


Application No.Application TitleIssue Date
20120012970CAPACITOR DEVICE USING AN ISOLATED WELL AND METHOD THEREFOR
A semiconductor device includes an isolated p-type well, wherein the isolated p-type well is a first electrode of a capacitor device; a capacitor dielectric on the isolated p-type well; a p-type polysilicon electrode over the capacitor dielectric, wherein the p-type pol...
01/19/2012
20100207178SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in acco...
08/19/2010
20100135937METAL OXIDE NANOCRYSTALS: PREPARATION AND USES
Nanocrystalline forms of metal oxides, including binary metal oxide, perovskite type metal oxides, and complex metal oxides, including doped metal oxides, are provided. Methods of preparation of the nanocrystals are also provided. The nanocrystals, including uncapped an...
06/03/2010
20080105945METHOD OF FORMING A NANOCLUSTER CHARGE STORAGE DEVICE
An integrated circuit and method of forming an integrated circuit having a memory portion minimizes an amount of oxidation of nanocluster storage elements in the memory portion. A first region of the integrated circuit has non-memory devices, each having a control elect...
05/08/2008
20070278619Semiconductor integrated circuit devices having high-Q wafer back-side capacitors
Methods are provided for fabricating semiconductor IC (integrated circuit) chips having high-Q on-chip capacitors formed on the chip back-side and connected to integrated circuits on the chip front-side using through-wafer interconnects. In one aspect, a semiconductor d...
12/06/2007
20070241424VERTICAL PARALLEL PLATE CAPACITOR USING SPACER SHAPED ELECTRODES AND METHOD FOR FABRICATION THEREOF
A capacitor structure uses an aperture located within a dielectric layer in turn located over a substrate. A pair of conductor interconnection layers embedded within the dielectric layer terminates at a pair of opposite sidewalks of the aperture. A pair of capacitor pla...
10/18/2007
20070170519Driver for Driving a Load Using a Charge Pump Circuit
A charge pump circuit includes MOSFETs and MOS capacitors formed on the same substrate. Each of the MOS capacitors has a multiplicity of first electrodes formed in one region of the substrate, insulating layers formed on/above respective substrate regions between neighb...
07/26/2007
20070108553Thin-film device and method of manufacturing same
A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer; a dielectric film a portion of which is disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectri...
05/17/2007
 
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