Did You Know...
...that Thomas Edison's patent application on his phonograph was approved by the Patent Office in just seven weeks? In contrast, it took Gordon Gould, the inventor of the laser, 30 years to obtain his patent -- finally awarded in 1988!
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| Application No. | Application Title | Issue Date |
| 20120080769 | ESD DEVICE AND METHOD A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconduc... | 04/05/2012 |
| 20120049187 | SEMICONDUCTOR DEVICE Accompanying the miniaturization of a gate electrode of a trench gate power MOSFET, the curvature of the bottom part of the trench increases, and thereby, electric fields concentrate on the part and deterioration of a gate oxide film (insulating film) occurs. The deteri... | 03/01/2012 |
| 20110227135 | SCHOTTKY DIODES Improved Schottky diodes with reduced leakage current and improved breakdown voltage are provided by building a JFET with its current path of a first conductivity type serially located between a first terminal comprising a Schottky contact and a second terminal. The cur... | 09/22/2011 |
| 20110227554 | SEMICONDUCTOR DEVICE AND DC-DC CONVERTER According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a base region of a second conductivity type, a diffusion region of the first conductivity type, a control electrode, at least one first semiconductor region ... | 09/22/2011 |
| 20110215400 | SEMICONDUCTOR DEVICE To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for d... | 09/08/2011 |
| 20110163372 | SEMICONDUCTOR DEVICE A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region ... | 07/07/2011 |
| 20110156682 | VOLTAGE CONVERTER WITH INTEGRATED SCHOTTKY DEVICE AND SYSTEMS INCLUDING SAME A semiconductor device such as a voltage converter includes a circuit stage such as an output stage having a high side device and a low side device which can be formed on a single die (i.e., a “PowerDie”) and connected to each other through a semiconductor substrate... | 06/30/2011 |
| 20090179270 | Electrostatic Discharge Protection Pattern for High Voltage Applications Electrostatic discharge (ESD) protection in high voltage semiconductor devices is disclosed that provides enhanced current isolation between transistor drains or sources by creating an isolation island surrounding the drains or sources. This isolation island can be a hi... | 07/16/2009 |
| 20090101938 | Electrostatic Discharge Protection Circuit The present invention provides an electrostatic discharge (ESD) protection circuit with a silicon controlled rectifier (SCR) having a plurality of SCR fingers (SCRs) with the advantages to couple the different fingers or SCRs to decrease the multi-triggering problem and... | 04/23/2009 |
