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| Application No. | Application Title | Issue Date |
| 20110227127 | ELECTRO-STATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE An electro-static discharge protection circuit includes: a PNPN junction, a P-type side of the PNPN junction being coupled to a terminal, an N-type side of the PNPN junction being coupled to ground; and a P-type metal oxide semiconductor transistor, a source and a gate ... | 09/22/2011 |
| 20110108882 | SEMICONDUCTOR DEVICE INTERNALLY HAVING INSULATED GATE BIPOLAR TRANSISTOR The semiconductor device includes a P-type semiconductor region and an MOS transistor. MOS transistor includes a gate electrode, a collector electrode, a drain electrode, an N-type impurity region and a P-type impurity region. N-type impurity region is electrically conn... | 05/12/2011 |
