Class 257/E27.03 - In combination with bipolar transistor and diode, capacitor, or resistor (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E27.038. This
No. of applications: 4
Last issue date: 12/22/2011

Application No.	Application Title	Issue Date
20110309420	Capacitors Integrated with Metal Gate Formation A semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided. The semiconductor structure includes a substrate and a MIM capacitor over the substrate. The MIM capacitor includes a bottom plate, an insulatin...	12/22/2011
20100258904	BOTTLE-SHAPED TRENCH CAPACITOR WITH ENHANCED CAPACITANCE In accordance with an aspect of the invention, a method is provided for fabricating a semiconductor chip including a trench capacitor. In such method, a monocrystalline semiconductor region can be etched in a vertical direction through an opening in a dielectric layer t...	10/14/2010
20090090977	RESISTOR AND FET FORMED FROM THE METAL PORTION OF A MOSFET METAL GATE STACK An integrated semiconductor device includes a resistor and an FET device formed from a stack of layers. The stack of layers includes a dielectric layer formed on a substrate; a metal conductor layer having lower electrical resistance formed on the dielectric layer; and ...	04/09/2009
20080149982	CMOS TRANSISTOR A CMOS transistor comprises a substrate with a gate electrode arranged thereon between source and drain regions. A capacitor is provided on the gate electrode and a voltage applied to the gate electrode is dropped across a stack, including the gate electrode and the cap...	06/26/2008

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