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...Daniel Webster invented a "bull plow" to pull out tree stumps. It didn't catch on because it was huge and required four oxen to pull it!
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| Number | Title | Issue Date |
| 7408193 | Semiconductor device and manufacturing method thereof A semiconductor device packaged in three dimensions comprises a first thin film device, a second thin film device, and a third thin film device, each of the first, second, and third thin film devices comprising a first insulating film, a first electrode formed over ... | 08/05/2008 |
| 7388275 | Electronic package with integrated capacitor Generally provided is a circuit assembly construction for controlling impedance in an electronic package. A large scale, parallel-plate capacitor includes two electrodes separated by a dielectric material. The electrodes serve as reference voltage planes for the ele... | 06/17/2008 |
| 7365428 | Array capacitor with resistive structure An apparatus comprises a first plurality of contacts disposed on a first side of the apparatus, adapted to engage with a first corresponding plurality of contacts on an external integrated circuit package. The apparatus further comprises a plurality of capacitive st... | 04/29/2008 |
| 7348656 | Power semiconductor device with integrated passive component A power semiconductor device that includes a passive component, e.g., a capacitor, mechanically and electrically coupled to at least one pole thereof. ... | 03/25/2008 |
| 7348653 | Resistive memory cell, method for forming the same and resistive memory array using the same A resistive memory cell employs a photoimageable switchable material, which is patternable by actinic irradiation and is reversibly switchable between distinguishable resistance states, as a memory element. Thus, the photoimageable switchable material is directly pa... | 03/25/2008 |
| 7227214 | Semiconductor device and method of manufacturing the same A lower electrode of a capacitor element and a wiring are formed in a wiring layer that is one layer below an uppermost wiring layer. Subsequently, after the formation of a capacitance insulating film, a TiN film is formed on the entire surface thereof, and then the... | 06/05/2007 |
| 7154158 | Semiconductor device having MIM structure resistor As for the resistor on the semiconductor substrate, it is required to achieve obtaining a metal resistor, which can be formed in the latter half of a preliminary process for manufacturing a semiconductor, in addition to forming a polysilicon resistor, which is forme... | 12/26/2006 |
| 6661074 | Receiver comprising a variable capacitance diode A receiver for radio or television signals provided with a high-frequency circuit having a discrete semiconductor component which includes a planar variable capacitance diode and an integrated series resistor formed on a common semiconductor or substrate.... | 12/09/2003 |
| 6638808 | Method of manufacturing gate driver with level shift circuit A method for forming a gate driver configured to drive a power semiconductor device includes providing a substrate having an upper surface; forming a conductive region on a portion of the upper surface of the substrate; forming a dielectric layer overlyin... | 10/28/2003 |
| 6486829 | Integrated electronic circuit comprising an oscillator with passive circuit elements An electronic circuit with at least one active electronic component (10) and a delay element connected to the component. The delay element comprises an electric conductor (13, 18) which is composed of a conductive material on an insulating layer (14) such... | 11/26/2002 |
| 6445027 | Method of manufacturing electronic component having capacitor element and resistor element, method of manufacturing semiconductor device, and semiconductor device A method of manufacturing an electronic component having a capacitor element and a resistor element, in which such capacitor element and such resistor element are individually formed in the material layer (for example, a tantalum oxide film formed by the ... | 09/03/2002 |
| 6417061 | Zener diode and RC network combination semiconductor device for use in integrated circuits and method therefor An improved semiconductor device and method which includes a zener diode and RC network combination that share common semiconductor mask steps during the fabrication process. A common N+ layer serves to provide both the separate N+ cathode regions of the ... | 07/09/2002 |
| 6399456 | Method of fabricating a resistor and a capacitor electrode in an integrated circuit A semiconductor fabrication method is provided for fabricating a resistor and a capacitor electrode in an integrated circuit, which can help enhance the quality of the resultant integrated circuit. In this method, the first step is to form a polysilicon l... | 06/04/2002 |
| 6365480 | IC resistor and capacitor fabrication method An IC resistor and capacitor fabrication method comprises depositing a dielectric layer over existing active devices and metal interconnections on an IC substrate. In a preferred embodiment, a layer of thin film material suitable for the formation of thin... | 04/02/2002 |
| 6318267 | Integrated circuit configuration and ignition unit An integrated circuit configuration, in particular for igniting a restraint device of a motor vehicle, has a capacitor and an ignition element. In this case, a porous region of a semiconductor layer forms a capacitor electrode, which is isolated from a fu... | 11/20/2001 |
| 6208009 | RC-networks in semiconductor devices and method therefor An improved RC network integrated circuit semiconductor device is disclosed which incorporates an improved method for fabrication. The new device and method includes the use of a tantalum nitride layer as the resistive material for the resistor and a prot... | 03/27/2001 |
| 5801065 | Structure and fabrication of semiconductor device having merged resistive/capacitive plate and/or surface layer that provides ESD protection A compact RC semiconductor structure suitable for integrated RC and RCD networks contains a semiconductor body (10), an overlying dielectric layer (14), and a resistive plate (16A) situated over the dielectric layer. The resistive plate constitutes both a... | 09/01/1998 |
| 5196723 | Integrated circuit screen arrangement and a method for its manufacture An integrated semiconductor circuit includes a substrate, an epitaxial layer having transistor base regions, a first and a second (11) insulating oxide layer, and a protective layer. The first oxide layer carries heavily doped polycrystalline layers, incl... | 03/23/1993 |
