Class 257/E27.022 - Vertical bipolar transistor in combination with diode only (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 33
Last issue date: 02/17/2004

Number	Title	Issue Date
6692982	Optical semiconductor integrated circuit device and manufacturing method for the same In an optical semiconductor integrated circuit device in which a vertical pnp transistor and a photodiode are formed, the preferred embodiments of the present invention eliminates difficulty in performance improvement of the two elements. In an illustrati...	02/17/2004
6670255	Method of fabricating lateral diodes and bipolar transistors Disclosed is a method of fabricating a lateral semiconductor device, comprising: providing a substrate, having at least an upper silicon portion forming at least one first dopant type region and at least one second dopant type region in the upper port...	12/30/2003
6642607	Semiconductor device A variable capacitor includes an N+ layer including a variable capacitance region, a P+ layer epitaxially grown on the N+ layer and formed from a SiGe film and a Si film, and a P-type electrode. An NPN-HBT (Hetero-junction...	11/04/2003
6605830	Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein A power semiconductor device including first and second assembly units. The first assembly of units includes a first semiconductor region of a second conductivity type selectively formed in a first main surface of the first semiconductor layer, a second s...	08/12/2003
6590273	Semiconductor integrated circuit device and manufacturing method thereof In the semiconductor integrated circuit device, a first P+ type buried layer formed as an anode region and an N+ type diffused region formed in a cathode region are spaced from each other in the direction of the depth. This makes it ...	07/08/2003
6586317	Method of forming a zener diode in a npn and pnp bipolar process flow that requires no additional steps to set the breakdown voltage A zener diode is formed in a bipolar or BiCMOS fabrication process by modifying the existing masks that are used in the bipolar or BiCMOS fabrication process, thereby eliminating the need for a separate doping step. In addition, the reverse breakdown volt...	07/01/2003
6441463	IGBT, control circuit, and protection circuit on same substrate Latch-up of each of parasitic thyristors (T1-T4), which occurs when a circuit element (B1) is formed on a semiconductor substrate in which an IGBT (Z1) has been formed, is prevented by a circuit for preventing the latch-up using Schottky barrier diodes (D...	08/27/2002
6406965	Method of fabricating HBT devices A method of fabricating an HBT transistor with extremely high speed and low operating current. The transistor has a small base area and a small emitter area with most of the emitter area contacted with metal, most of the base area, outside of the emitter,...	06/18/2002
6387769	Method of producing a schottky varicap A method of producing a Schottky varicap (25) including: (a) providing an epitaxial layer (12) on a semiconductor substrate (1); (b) providing an insulating layer including an oxide layer and a nitride layer on a predetermined area of the surface of the epitaxial l...	05/14/2002
6323509	Power semiconductor device including a free wheeling diode and method of manufacturing for same An emitter-side structure (2) is formed at an upper main surface of a silicon substrate (1), and an n-type buffer layer (3) is formed at a lower main surface thereof. A p-type collector layer (4) is formed in a main surface of the n-type buffer layer (3),...	11/27/2001
6146957	Method of manufacturing a semiconductor device having a buried region with higher impurity concentration Since the PN junction of a photodiode is formed of a silicon substrate having a low impurity concentration and an epitaxial layer, the width of the depletion layer in the PN junction is formed wider, the parasitic capacitance by the junction capacitance i...	11/14/2000
5942783	Semiconductor device having improved latch-up protection A semiconductor circuit includes a semiconductor layer having a surface and a monolithic output stage formed in the semiconductor layer. The monolithic output stage extends to the surface of the semiconductor layer and has a periphery within the semicondu...	08/24/1999
5798560	Semiconductor integrated circuit having a spark killer diode Buried N+ layers are formed in the surface of a substrate, on which first and second epitaxial layers are successively deposited. A vertical PNP transistor formed in the surface of the first epitaxial layer has a buried collector layer, a coll...	08/25/1998
5719066	Method of manufacturing a semiconductor integrated circuit apparatus having a mis-type condenser A lower layer diffusion layer of a metal-insulator-semiconductor-type (MIS-type) condenser is formed by implanting and diffusing phosphorus into an upper portion of an epitaxial layer formed on a semiconductor substrate. Thereafter, a silicon nitride film...	02/17/1998
5583348	Method for making a schottky diode that is compatible with high performance transistor structures A method for making a schottky diode structure (10) simultaneously with a polysilicon contact structure (31,33) to a transistor is provided. In a single process step, a polysilicon layer is patterned to expose a single crystal semiconductor region (22a) o...	12/10/1996
5539301	Monolithically integrated power output stage A monolithically integrated power output stage detects the load current through an output-stage transistor. Switch logic coupled to an output transistor is for switching the output transistor when a predetermined load-current threshold is reached. In this...	07/23/1996
5521414	Monolithic integrated structure to protect a power transistor against overvoltage A structure of an electronic device having a predetermined unidirectional conduction threshold is formed on a chip of an N-type semiconductor material and includes a plurality of isolated N-type regions. Each isolated N-type region is bounded laterally by...	05/28/1996
5432360	Semiconductor device including an anode layer having low density regions by selective diffusion A semiconductor diode characterized by an anode electrode structure connected to a double diffusion of P-type impurities in a major surface of an N- semiconductor. The first diffusion forming a first plurality of P- well regions and ...	07/11/1995
5323021	Semiconductor integrated circuit device having diode and bipolar transistor held in contact through oxygen-leakage film with emitter electrode A bipolar transistor and a diode are incorporated in a semiconductor integrated circuit device, and an emitter electrode is constituted by lower and upper doped polysilicon films sandwiching an oxygen-leakage film which tunnels minority carriers of the ba...	06/21/1994
5320971	Process for obtaining high barrier Schottky diode and local interconnect This invention is a silicon bipolar integrated circuit comprising: a high barrier Schottky diode clamp on a bipolar transistor, the diode clamp comprising a self-aligned PtSi layer on a silicon surface; and a TiN local interconnect partially overlying the...	06/14/1994
5306937	Semiconductor device having a built-in current-sensing diode The present invention to a semiconductor switching device for use in semiconductor converter devices, which switching device has a built-in current sensor to detect the current flowing into parasitic diodes integrally formed as part of the semiconductor s...	04/26/1994
5285100	Semiconductor switching device A semiconductor switching device that is suitable for use as a remote isolation device (RID) in telephone networks. The semiconductor switching device is a two-terminal voltage sensitive device that switches from an open-circuit condition to a short-circu...	02/08/1994
5268316	Fabrication process for Schottky diode with localized diode well An improved Schottky diode structure (4) is formed by retrograde diffusing an N+ concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell (6) as the diode substrate for the diode. A buried ...	12/07/1993
5179030	Method of fabricating a buried zener diode simultaneously with other semiconductor devices A method for fabricating a buried zener diode concurrently with other semiconductor devices on a large scale semiconductor wafer includes utilizing a composite mask to define one or more stable buried zener diodes, one or more additional semiconductor dev...	01/12/1993
5150177	Schottky diode structure with localized diode well An improved Schottky diode structure (4) is formed by retrograde diffusing an N+ concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell (6) as the diode substrate for the diode. A buried d...	09/22/1992
4965643	Schottky diode for integrated circuits An improved Schottky diode may be placed above an insulating layer such as the field oxide instead of within an epitaxial layer. The forward voltage, dynamic resistance and breakdown voltage may all be tailored....	10/23/1990
4523215	Semiconductor device A semiconductor device including a power transistor and a power semiconductor diode disposed on a common semiconductor substrate is arranged such that the power diode has a withstanding voltage and a dielectric strength which are greater than that of the ...	06/11/1985
4398142	Kelvin-connected buried zener voltage reference circuit An improved voltage reference circuit is provided comprising a series combination of a Kelvin-connected buried zener diode and a transistor. The collector of the transistor is connected to the first anode of the diode while the base of the transistor is c...	08/09/1983
4243435	Bipolar transistor fabrication process with an ion implanted emitter A very high current ion implanted emitter is formed in a diffused base. Windows are made through the silicon nitride and silicon dioxide layes to both the base contact and the emitter regions using a resist mask. These regions are then protected by resist...	01/06/1981
4106048	Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor A protection device for integrated circuits used on television sets is described which protects the devices against damage of the type caused by kinescope arcing. The protection device described comprises a diode having a first region of the same conducti...	08/08/1978
4017882	Transistor having integrated protection An integrated transistor device has reverse bias breakdown protection for both the base-collector PN junction and the base-emitter PN junction. The base-emitter PN junction is protected by means of a diode effectively in parallel relation therewith, and t...	04/12/1977
3995301	Novel integratable Schottky Barrier structure and a method for the fabrication thereof A novel Schottky Barrier structure which is integratable with standard integrated circuits comprising a metal layer of Al2 Pt in contact with a high resistivity semiconductor region. The structure is fabricated by first forming a platinum silic...	11/30/1976
3946425	Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors In a semiconductor integrated circuit device in which a plurality of regions each having a semiconductor element such as a PN junction diode and a transistor are isolated electrically from one another by PN junctions formed between the respective regions ...	03/23/1976

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Class 257/E27.022 - Vertical bipolar transistor in combination with diode only (EPO)