Did You Know...
...that Charles Goodyear performed some of his experiments on rubber while in debtor's prison? He was there so often he referred to it as his "hotel". Chronically in debt because of poor business sense and ill health, Goodyear depended on the generosity of friends and family. Even after he unlocked the secret to vulcanizing rubber, he was unable to improve his financial situation. When he died, his estate was $200,000 in debt.
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| Number | Title | Issue Date |
| 6667491 | Semiconductor device A semiconductor device includes a silicon semiconductor substrate, having a main surface including a first region and a second region side-by-side, an epitaxially grown layer of high resistivity as a first layer on the main surface, and an epitaxially gro... | 12/23/2003 |
| 6639300 | Semiconductor integrated circuit having an integrated resistance region A semiconductor integrated circuit device comprises an active device and a resistance element formed monolithically on a common substrate wherein the resistance element includes a dummy pattern having a layered structure identical with a layered structure... | 10/28/2003 |
| 6563194 | BJT with surface resistor connection A semiconductor device having: a base area of the first conduction type formed on a semiconductor substrate; an emitter area of the second conduction type formed in the base area; and a collector area of the second conduction type formed as joined to the ... | 05/13/2003 |
| 6551890 | Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor A method of manufacturing a semiconductor device comprising a poly-emitter transistor (1) and a capacitor (2). A base electrode (14), a first electrode (16, 37) and an emitter window (18) are formed at the same time in a first polysilicon layer (13) cover... | 04/22/2003 |
| 6511889 | Reference voltage supply circuit having reduced dispersion of an output voltage A reference voltage supply circuit is provided with a PNP transistor. The PNP transistor has an N-type well for a base formed at a surface of a P-type semiconductor substrate. The reference voltage supply circuit is further provided with a resistor elemen... | 01/28/2003 |
| 6483168 | Integrated circuit having resistor formed over emitter of vertical bipolar transistor An integrated circuit including a resistor that at least partially overlies a first tub of semiconductor material of a first polarity, where the first tub is formed in a second tub of semiconductor material having the opposite polarity, and the second tub... | 11/19/2002 |
| 6479360 | Semiconductor device and manufacturing method In a semiconductor device comprising a resistance element electrically connected to a bipolar transistor, the bipolar transistor is formed on a silicon substrate and a predetermined resistance element is formed on an insulation film formed on the bipolar ... | 11/12/2002 |
| 6465870 | ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region A ESD (electrostatic discharge) robust SiGe bipolar transistor is provided which comprises a substrate of a first conductivity type; a doped subcollector region of a second conductivity type formed on the substrate, the doped subcollector region including... | 10/15/2002 |
| 6410370 | Capacitor for a semiconductor device A semiconductor device comprises a substrate such as a semiconductor wafer having a major surface, a first conductive layer formed over the major surface, and a second conductive layer formed over the first conductive layer with the first and second condu... | 06/25/2002 |
| 6403436 | Semiconductor device and method of manufacturing the same Subcollector layers or emitter layers constituting a bipolar transistor having different thicknesses form a two-layered structure. A resistor layer is formed at the same as one of the subcollector layers or one of the emitter layers, from the same materia... | 06/11/2002 |
| 6329262 | Method for producing semiconductor integrated circuit A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate directly or via an insulating film. The semiconductor inte... | 12/11/2001 |
| 6313515 | Reference voltage supply circuit A reference voltage supply circuit is provided with a PNP transistor. The PNP transistor has an N-type well for a base formed at a surface of a P-type semiconductor substrate. The reference voltage supply circuit is further provided with a resistor elemen... | 11/06/2001 |
| 6291873 | Semiconductor device having a resistive element connected to a transistor and substrate In a semiconductor device comprising a resistance element electrically connected to a bipolar transistor, the bipolar transistor is formed on a silicon substrate and a predetermined resistance element is formed on an insulation film formed on the bipolar ... | 09/18/2001 |
| 6177701 | Semiconductor device with resistor and fabrication method therof A semiconductor device capable of the area reduction of a resistor. A semiconductor substrate having a first conductive region is prepared. A dielectric layer is formed to cover the first conductive region. The dielectric layer has a contact hole formed t... | 01/23/2001 |
| 6090647 | Capacitor for a semiconductor device A semiconductor device comprises a substrate such as a semiconductor wafer having a major surface, a first conductive layer formed over the major surface, and a second conductive layer formed over the first conductive layer with the first and second condu... | 07/18/2000 |
| 6040225 | Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices A method that enables the fabrication of ballast resistors in polysilicon which can be fabricated in a manner so as to not relax the strained layers in the lattice of the silicon germanium transistor wherein the high temperature steps, associated with act... | 03/21/2000 |
| 6025632 | Semiconductor integrated circuit with tungston silicide nitride thermal resistor A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate directly or via an insulating film. The semiconductor inte... | 02/15/2000 |
| 5889309 | Electrostatic discharge protection circuit An electrostatic discharge protection circuit formed in a semiconductor substrate includes a vertical bipolar junction transistor having a base which is grounded, an emitter connected to an output/input bonding pad of an integrated circuit, and a collecto... | 03/30/1999 |
| 5874771 | Punch-through resistor The continuing miniaturization of integrated circuits leads to a demand for ever higher resistance values. In conventional diffused resistors or poly resistors, an increase in the resistance value also means an increase in the surface area. Such resistors... | 02/23/1999 |
| 5858850 | Process of fabricating integrated heterojunction bipolar device and MIS capacitor A process of fabricating a semiconductor device includes the steps of: forming a base layer of a bipolar transistor (NPN bipolar transistor) on a semiconductor base body by selective epitaxial growth; and forming a dielectric film of a MIS capacitor on th... | 01/12/1999 |
| 5805410 | MOS capacitor for improving electrostatic durability by using of a transistor The present invention relates to a MOS capacitor. According to this invention, the MOS capacitor has a transistor structure. One electrode of the capacitor is connected to an emitter of the transistor and the other electrode of the capacitor is connected ... | 09/08/1998 |
| 5691214 | Method of manufacturing semiconductor devices A method of manufacturing a semiconductor device furnished on a silicon substrate with a bipolar element part and a resistance element part formed of an impurity diffusion layer, having (a) a step of forming a first oxide film on said silicon substrate an... | 11/25/1997 |
| 5684326 | Emitter ballast bypass for radio frequency power transistors An apparatus and method are provided for bypassing the emitter ballast resistors of a power transistor, thereby increasing transistor gain. In a power transistor of the interdigitated type, bypassing the emitter ballast resistors requires bypassing each i... | 11/04/1997 |
| 5489796 | Integrated circuit resistor comprising amorphous silicon The device hereof provides an integrated circuit resistor (34) comprising amorphous or noncrystalline semiconducting material. Further advantages can be gained in area by forming the noncrystalline semiconductor resistor in a non-planar fashion (i. e. wit... | 02/06/1996 |
| 5336632 | Method for manufacturing capacitor and bipolar transistor A lower electrode of a capacitor is manufactured simultaneously with an electrode such as a collector electrode and a base electrode of a bipolar transistor, and an upper electrode of the capacitor is manufactured simultaneously with another electrode suc... | 08/09/1994 |
| 5296734 | Semiconductor integrated circuit having silicon nitride provided as insulator of capacitor An integrated circuit comprises a semiconductor substrate, a plurality of islands formed at a principal surface of the substrate and isolated from one another by a PN junction, an interlayer insulating film formed to substantially cover the principal surf... | 03/22/1994 |
| 5221857 | Bipolar transistor structure with polycrystalline resistor layer A polycrystalline silicon layer 9 for a base leading electrode is formed on an element forming region divided by an element isolating layer which is formed by burying a BPSG film 8 in a groove. A depression generated on the element isolating layer is fill... | 06/22/1993 |
| 4947231 | Integrated structure with active and passive components enclosed in insulating pockets and operating at higher than the breakdown voltage between each component and the pocket containing it The integrated structure consists of circuit components made by diffusion of dopes in a semiconductor substrate. Each of said components is situated inside a respective insulating pocket to which is applied a voltage falling between the minimum and the ma... | 08/07/1990 |
| 4903109 | Semiconductor devices having local oxide isolation A semiconductor monolithic integrated circuit comprising circuit elements built into isolated epitaxial layer islands is described. The isolation is accomplished by part by a p-n junction between the epitaxial layer and its substrate, in part by an insula... | 02/20/1990 |
| 4898839 | Semiconductor integrated circuit and manufacturing method therefor A method of manufacturing a semiconductor integrated circuit comprises the steps of: forming an epitaxial layer covering a semiconductor substrate and buried layers; forming isolation regions dividing the epitaxial layer into a plurality of islands; formi... | 02/06/1990 |
| 4898837 | Method of fabricating a semiconductor integrated circuit A method of fabricating a semiconductor integrated circuit comprises the steps of: forming buried layers in predetermined regions of a semiconductor substrate; forming an epitaxial layer covering the substrate and the buried layers; forming isolation regi... | 02/06/1990 |
| 4871977 | Monolithic integrated wideband power amplifier A monolithic integrated wideband power amplifier circuit has a push-pull output stage, a driver stage, a difference stage which receives an input voltage signal and provides a difference signal, and the improvement of an operating point setter which recei... | 10/03/1989 |
| 4812894 | Semiconductor device A semiconductor device includes a first insulation film formed on a monocrystalline substrate and having an opening, a monocrystalline semiconductor layer formed so as to protrude into the first insulation film, and a conductive layer formed in contact wi... | 03/14/1989 |
| 4758873 | Balanced MOS capacitor with low stray capacitance and high ESD survival A peaking capacitor for use with a differential input stage in an integrated circuit. The stage includes emitter degeneration resistors and a peaking capacitor coupled between the emitters. The capacitor is formed of MOS capacitors located over thinned ox... | 07/19/1988 |
| 4732872 | Method for making a bipolar transistor and capacitors using doped polycrystalline silicon or metal silicide The invention provides a method for making a semiconductor device including a bipolar transistor and a capacitor. An oxide film and a silicon nitride film are formed and patterned on a semiconductor substrate. A layer of polycrystalline silicon or of meta... | 03/22/1988 |
| 4509250 | Process for manufacturing a monolithic integrated circuit comprising at least one bipolar planar transistor In the process according to the invention, in addition to the conventional two photoresist processes for opening the contact holes and for manufacturing the interconnecting pattern, two photoresist processes are used with one photoresist mask each for man... | 04/09/1985 |
| 4418469 | Method of simultaneously forming buried resistors and bipolar transistors by ion implantation A method of making at a relatively low temperature, a resistor region of a high sheet resistance, solely or together with other circuit devices such as bipolar transistors in an IC chip, with the step of forming a buried resistor layer inside a semiconduc... | 12/06/1983 |
| 4416055 | Method of fabricating a monolithic integrated circuit structure Method of fabricating monolithic integrated circuit structure incorporating a bipolar transistor and a high value resistor. First and second N-type sectors are formed in an N-type epitaxial layer by junction isolation. A silicon oxide layer is formed on t... | 11/22/1983 |
| 4377029 | Process for fabricating a bipolar integrated circuit having capacitors A process for fabricating a bipolar integrated circuit comprises the steps of: forming isolation regions in an epitaxial layer of a second conductivity type formed on a semiconductor substrate of a first conductivity type; forming a thermal oxidation layer on ... | 03/22/1983 |
| 4349797 | Phase-compensated integrated circuit Compensation for an effect produced by variations in the base-widths of integrated circuit transistors occurring from batch to batch is obtained by including in each integrated circuit a resistor the resistance of which has an inverse relationship to the ... | 09/14/1982 |
