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| Number | Title | Issue Date |
| 7352042 | Radiation-emitting semiconductor device and method of manufacturing such a device The invention relates to a radiation-emitting semiconductor device (10) with a semiconductor body (1) and a substrate (2), wherein the semiconductor body (1) comprises a vertical bipolar transistor with an emitter region (3), a bas... | 04/01/2008 |
| 6649458 | Method for manufacturing semiconductor device with hetero junction bipolar transistor The present invention achieves the enhancement of a manufacturing yield factor and the reduction of manufacturing cost in a manufacturing method of a semiconductor device having a hetero junction bipolar transistor (HBT), a Schottky diode and a resistance... | 11/18/2003 |
| 6610569 | Semiconductor device and process of producing the same The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of produci... | 08/26/2003 |
| 6524924 | Semiconductor device and process of producing the same The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of produci... | 02/25/2003 |
| 6133094 | Semiconductor device and process of producing the same The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of produci... | 10/17/2000 |
| 5949122 | Integrated circuit with a device having a predetermined reverse conduction threshold and a thermal compensation device with Vbe multipliers A monolithic, integrated semiconductor circuit comprising a high-voltage ice (210) with a predetermined reverse-conduction threshold comprising a chain of zener diodes (220-240). Device 210 is connected in series with a thermal compensation device (250) ... | 09/07/1999 |
| 5793097 | Semiconductor device having conducting structure The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of produci... | 08/11/1998 |
| 5694071 | Electronic device comprising means for compensating an undesired capacitance A device compensated for an undesired capacitance includes a first and a second node between which nodes the undesired capacitance is present. A diode driven in breakthrough is coupled between the first and the second node. As a diode driven in breakthrou... | 12/02/1997 |
| 5500541 | Semiconductor device having voltage sensing element A semiconductor device having a voltage sensing element is disclosed which allows reduction of power consumption in comparison with a conventional device and enables to obtain a sufficient output voltage to secure sensing accuracy even when an input volta... | 03/19/1996 |
| 5391905 | Integrated logic circuit A logic circuit comprising an active-pull-down circuit in which electrodes of an active capacitor are formed of a conductive layer in common with one of contact electrodes of neighboring transistors is disclosed. The area for the capacitor is reduced, so ... | 02/21/1995 |
| 5240867 | Semiconductor integrated circuit having interconnection with improved design flexibility, and method of production A semiconductor integrated circuit comprises a substrate of a first semiconductor type doped by a first impurity element with a first impurity density, the first semiconductor type being one of p-type and n-type semiconductors, a conductive layer formed o... | 08/31/1993 |
| 5065216 | Semiconductor integrated circuit having interconnection with improved design flexibility, and method of production A semiconductor integrated circuit comprises a substrate of a first semiconductor type doped by a first impurity element with a first impurity density, the first semiconductor type being one of p-type and n-type semiconductors, a conductive layer formed o... | 11/12/1991 |
| 4969030 | Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors The integrated structure is formed of various circuital components accomplished by diffusion of dopants in a semiconductor substrate. Each component is located inside a respective insulation recess electrically floating in relation to the substrate and th... | 11/06/1990 |
| 4689579 | Analog integrated circuit A high-density analog integrated circuit having built-in resistor elements formed simultaneously with the formation of the base of transistor is disclosed in which a high-resistance element is formed of an ion-implanted resistor, a low-resistance element ... | 08/25/1987 |
| 4295088 | Temperature-sensitive voltage divider A temperature-sensitive voltage divider for monolithic i.c.'s using singly and doubly diffused resistors avoids the problems with tracking their resistance characteristics owing to diffusion process variations. This is done by using the pinch resistor in ... | 10/13/1981 |
| 4268348 | Method for making semiconductor structure 1. In a method for forming a semiconductor structure utilizing a semiconductor body, forming a grid structure in the semiconductor body, forming a support structure upon the grid structure, removing only a portion of the semiconductor body to provide a se... | 05/19/1981 |
| 4260436 | Fabrication of moat resistor ram cell utilizing polycrystalline deposition and etching A RAM cell having a pair of transistors formed in two adjacent wells laterally separated from each other and surrounded laterally by a common doped polycrystalline semiconductor moat. Dielectrical insulation separate the wells from the moat. The moat is d... | 04/07/1981 |
| 4258311 | Constant voltage generator for generating a constant voltage having a predetermined temperature coefficient A constant voltage generator capable of generating a constant voltage having a fixed temperature coefficient regardless of manufacturing errors is disclosed. The constant voltage generator comprises a transistor construction having a forwardly biased PN-j... | 03/24/1981 |
| 4193836 | Method for making semiconductor structure Method for making a semiconductor structure having isolated islands of semiconductor material from a semiconductor body by forming a first layer of insulating material on a surface of the body having a first support structure upon the layer of insulating ... | 03/18/1980 |
| 4134124 | Semiconductor devices and circuit arrangements including such devices A circuit arrangement is at least partially embodied in a collector-diffusion-isolation (CDI) type device, in a semiconductor body comprising a thin layer initially wholly of one conductivity type on a substrate of the same conductivity type, and the devi... | 01/09/1979 |
| 4053336 | Method of manufacturing a semiconductor integrated circuit device having a conductive plane and a diffused network of conductive tracks A semiconductor device having a plurality of constituent components within a semiconductor body such that the device in combination with one of a plurality of different possible metallization patterns of conductors forms a desired circuit arrangement, is ... | 10/11/1977 |
| 4024417 | Integrated semiconductor structure with means to prevent unlimited current flow This describes an integrated semiconductor structure having an epitaxial semiconductor layer, divided into regions by isolation zones and containing active and passive semiconductor devices, of a first conductivity type on a substrate of the opposite seco... | 05/17/1977 |
| 4009484 | Integrated circuit isolation using gold-doped polysilicon A semiconductor device comprising monocrystalline semiconductor regions and a polycrystalline semiconductor region doped with gold and disposed between and adjacent to the monocrystalline regions. The high impedance appearing between the regions is utiliz... | 02/22/1977 |
| 4009057 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device, in which on a basic mask of a first material there is provided a layer of a second material, after which the first material with the second material present thereon is removed, and an island of the second ... | 02/22/1977 |
| 3990092 | Resistance element for semiconductor integrated circuit A semiconductor integrated circuit contains a resistance element, wherein a low resistance region of a first conductivity type, employed for a circuit resistance, is formed within a high resistance region of a second conductivity type, opposite to the fir... | 11/02/1976 |
| 3967310 | Semiconductor device having controlled surface charges by passivation films formed thereon After desired impurities are diffused into a semiconductor substrate through a masking layer of SiO2 formed thereupon so as to form a semiconductor device, the masking layer is completely removed therefrom and thereafter more than two thin laye... | 06/29/1976 |
| 3946425 | Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors In a semiconductor integrated circuit device in which a plurality of regions each having a semiconductor element such as a PN junction diode and a transistor are isolated electrically from one another by PN junctions formed between the respective regions ... | 03/23/1976 |
| 3945032 | Semiconductor integrated circuit device having a conductive plane and a diffused network of conductive tracks A semiconductor device having a plurality of constituent components within a semiconductor body such that the device in combination with one of a plurality of different possible metallisation patterns of conductors forms a desired circuit arrangement, is ... | 03/16/1976 |
