Class 257/E27.019 - Bipolar transistor in combination with diode, capacitor, or resistor (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 22
Last issue date: 04/08/2008

Number	Title	Issue Date
7355265	Semiconductor integrated circuit A semiconductor integrated circuit comprising a power supply wiring and a ground wiring and a decoupling capacitor formed between the power supply wiring and the ground wiring, wherein at least one electrode of the decoupling capacitor consists of a shield layer for...	04/08/2008
6680513	Semiconductor device A semiconductor device has a first IGBT (1) for controlling a principal current and a second IGBT (2) for preventing an over-current of the first IGBT (1). A diode portion (11) is disposed between the emitter (5) of the first IGBT (1) and the emitter (6) ...	01/20/2004
6610578	Methods of manufacturing bipolar transistors for use at radio frequencies A bipolar transistor of type NPN has an active region at the surface of the component, which is surrounded, as seen along the surface of the component, in the conventional way by thick field oxide areas. The active region is partly covered by an electrica...	08/26/2003
6580147	Semiconductor device having built-in capacitors P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a sem...	06/17/2003
6573146	Methods of manufacturing complementary bipolar transistors A complementary bipolar transistor having a lateral npn bipolar transistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral...	06/03/2003
6495866	Semiconductor device for preventing an increased clamp voltage in an ignition circuit Providing a semiconductor device for use in a ignition circuit, which prevents an increase in clamp voltage and allows application of a constant voltage across an ignition plug. In a semiconductor device which comprises a transistor and a zener diode conn...	12/17/2002
6445561	Circuit arrangement, in particular for triggering an ignition end stage A circuit arrangement, in particular for triggering an ignition output stage, having a power switching transistor and a switchable freewheeling circuit or an auxiliary channel. The freewheeling circuit or the auxiliary channel may be constituted by a trig...	09/03/2002
6326674	Integrated injection logic devices including injection regions and tub or sink regions A complementary bipolar transistor having a lateral npn bipolar transistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral...	12/04/2001
6261932	Method of fabricating Schottky diode and related structure A method of forming an improved Schottky diode structure as part of an integrated circuit fabrication process that includes the introduction of a selectable concentration of dopant into the surface of an epitaxial layer so as to form a barrier-modifying s...	07/17/2001
6259307	Temperature compensated voltage gain stage A temperature compensated voltage gain stage (50) has a first current path, including a first bipolar transistor (12), a first load resistor (16), and a first PTAT current source (20) connected in series, and a second current path including a second bipol...	07/10/2001
6014064	Heterolithic voltage controlled oscillator A voltage controlled oscillator includes a varactor (201) and a transistor (202) and a ground via (203), of epitaxially grown silicon that is etched to provide respective pedestals embodying the varactor (201) and the transistor (202) and the ground via (...	01/11/2000
6005283	Complementary bipolar transistors A complementary bipolar transistor having a lateral npn bipolar trasistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral ...	12/21/1999
6005284	Semiconductor device and its manufacturing method A bipolar semiconductor device includes an npn transistor using a base outlet electrode in the form of a polycrystalline Si film and one or more other devices using an electrode in the form of a polycrystalline Si film supported on a common p-type Si subs...	12/21/1999
5952864	Integratable circuit configuration for stabilizing the operating current of a transistor by negative feedback, being suitable in particular for battery-operated devices An integratable circuit configuration for stabilizing an operating point of a transistor by negative feedback includes first, second, third and fourth terminals. The fourth terminal is connected to a fixed ground potential, and the first and fourth termin...	09/14/1999
5661066	Semiconductor integrated circuit In an integrated circuit comprising an IIL and a high frequency npn bipolar transistor which has a deep p- -type base region 45 for its inverted npn output transistors, circuit elements such as a resistor part R, a capacitor part C, a diode par...	08/26/1997
5018000	Semiconductor device using MIS capacitor A MIS capacitor to be implemented in a semiconductor device employing various or predetermined circuits, has a dielectric side electrode which is in contact with a buried layer provided on a semiconductor substrate through a dielectric film and a buried l...	05/21/1991
4536784	Semiconductor device having a junction capacitance, an integrated injection logic circuit and a transistor in a semiconductor body A semiconductor device has a diffused layer of a first conductivity type which extends to a buried layer of a second conductivity type, formed in a manner to extend from a part of a surface of a semiconductor layer of the second conductivity type which is...	08/20/1985
4505766	Method of fabricating a semiconductor device utilizing simultaneous outdiffusion and epitaxial deposition A semiconductor device has a diffused layer of a first conductivity type which extends to a buried layer of a second conductivity type, formed in a manner to extend from a part of a surface of a semiconductor layer of the second conductivity type which is...	03/19/1985
4247343	Method of making semiconductor integrated circuits The proposed method of making semiconductor integrated circuits comprises sequential formation on a p-substrate of a first layer of n-regions, an epitaxial p-layer, a second layer of n-regions with an oxide layer, a third layer of p- and n-regions formed ...	01/27/1981
4127864	Semiconductor device A semiconductor device having a bipolar transistor of the lateral type, preferably a pnp-transistor which is provided in a homogeneously doped semiconductor layer and which may be provided both in an n-type and in a p-type semiconductor layer and of which...	11/28/1978
4028564	Compensated monolithic integrated current source A main semiconductor element is placed on a circuit chip; additionally, a compensating semiconductor element is placed thereon, the compensating semiconductor element being a diode, a substrate diode, a Schottky diode, a transistor with shortcircuited bas...	06/07/1977
4017885	Large value capacitor Disclosed is a semiconductor capacitor which utilizes the volume of the semiconductor substrate in which it is formed to create increased surface area and thereby to provide increased capacitance. The surface area is increased by forming selectively space...	04/12/1977

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Class 257/E27.019 - Bipolar transistor in combination with diode, capacitor, or resistor (EPO)