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| Number | Title | Issue Date |
| 6667491 | Semiconductor device A semiconductor device includes a silicon semiconductor substrate, having a main surface including a first region and a second region side-by-side, an epitaxially grown layer of high resistivity as a first layer on the main surface, and an epitaxially gro... | 12/23/2003 |
| 6323718 | Normally-on bidirectional switch The present invention relates to a normally-on bidirectional switch, including, in parallel between two power terminals of the switch, a first cathode-gate thyristor, the anode of which is connected to a first power terminal, a second anode-gate thyristor... | 11/27/2001 |
| 6218729 | Apparatus and method for an integrated circuit having high Q reactive components In an IC packaging scheme, a multilayer substrate is composed of electrically conductive layers of interconnects, separated by insulative layers of epoxy resin or ceramic and connected by vias. Passive elements are integrated within the substrate at the d... | 04/17/2001 |
| 5982016 | Monolithic component associating a high-voltage component and logic components A monolithic component including, in an N-type lightly-doped substrate of a semiconductor wafer, two portions separated by a P-type insulating wall. A first portion of the two portions includes a high voltage lateral component, a layer of which substantia... | 11/09/1999 |
| 4833587 | Semiconductor switching circuit A fraction of current passing through the P-emitter region and N-base region of a thyristor is by-passed to the base-emitter junction of a PNP transistor. The amount of the base current is dependent on the thyristor current. Thus, as the anode current of ... | 05/23/1989 |
| 4528461 | Integrated circuit switch using stacked SCRs An integrated circuit switch having a pair of serially connected SCRs with diodes connecting the gates of the SCRs to an independent bias source such that the second SCR is gated on first to enable the gating of the first SCR in the series connection.... | 07/09/1985 |
| 4528462 | Integrated circuit switch using stacked SCRs An integrated circuit switch having a pair of serially connected SCRs with diodes connecting the gates of the SCRs to independent biasing and switching sources such that the second SCR is gated on first to enable the gating of the first SCR in the series ... | 07/09/1985 |
| 4309715 | Integral turn-on high voltage switch A high voltage solid-state switch uses a dielectrically isolated lightly doped p- type semiconductor body with a heavily doped p+ type anode region, a heavily doped n+ type gate region, a moderately doped p type shield region, and a heavily doped n+ type ... | 01/05/1982 |
| 4286280 | Semiconductor integrated circuit device A semiconductor integrated circuit device including a power element and circuit elements for controlling the power element each provided on the same dielectric isolated substrate is disclosed in which the dielectric isolated substrate comprises a semicond... | 08/25/1981 |
| 4176372 | Semiconductor device having oxygen doped polycrystalline passivation layer A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said subst... | 11/27/1979 |
| 4146905 | Semiconductor device having complementary transistor structures and method of manufacturing same A semiconductor device includes a body comprising two planar complementary transistor structures preferably but not exclusively with dielectric insulation. Both complementary transistor structures comprise parts of two epitaxial layers of opposite conduct... | 03/27/1979 |
| 3988772 | Current isolation means for integrated power devices The minority carrier lifetime is drastically reduced in an integrated semiconductor power device by introducing deep level impurities such, for example, as gold, silver, platinum, nickel and copper into selected regions of the device by Thermal Gradient Z... | 10/26/1976 |
| 3982269 | Semiconductor devices and method, including TGZM, of making same A homogeneous integrated power structure embodies solid state control or signal devices and power devices integrated monolithically to achieve optimum physical characteristics of each device embodied therein at economical cost of manufacturing the same. T... | 09/21/1976 |
| 3959812 | High-voltage semiconductor integrated circuit A high-voltage semiconductor integrated circuit consists of an N- -type substrate, a P+-type diffusion layer formed on the surface region of the substrate, an N+-type diffusion layer formed on the P+-type diffus... | 05/25/1976 |
