Class 257/E27.014 - Including a field-effect type component (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 36
Last issue date: 02/26/2008

Number	Title	Issue Date
7335563	Rotated field effect transistors and method of manufacture An apparatus and method for manufacturing rotated field effect transistors. The method comprises providing a substrate including a first gate structure and a second gate structure, which are not parallel to each other. The method further includes performing a first ...	02/26/2008
7279752	Display device using electroluminescence material There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrat...	10/09/2007
7253453	Charge-device model electrostatic discharge protection using active device for CMOS circuits An integrated circuit for providing electrostatic discharge protection that includes a contact pad, a CMOS device including a transistor having a substrate, and a CDM clamp for providing electrostatic discharge protection coupled between the contact pad and the CMOS...	08/07/2007
7189996	Electron injection composition for light emitting element, light emitting element, and light emitting device In the present invention, an electron injection composition for a light-emitting element, comprising a pyridine derivative represented by general formula 1 and at least one of an alkali metal, an alkali earth metal, and a transition metal, is used to form an electro...	03/13/2007
7190022	One transistor flash memory cell An integrated circuit has a high voltage area, a logic area and a memory array for forming a system on a chip that includes linear, logic and memory devices. The memory array has floating gate transistors disposed in a triple well structure with a raised drain bit l...	03/13/2007
6690038	Thyristor-based device over substrate surface A semiconductor device having a thyristor is arranged in a manner that reduces or eliminates manufacturing difficulties commonly experienced in the formation of such devices, as well as facilitates the implementation of the semiconductor device in a varie...	02/10/2004
6680518	Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (CMOS) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (CMOS) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods are described. In one embodiment, a monolithic inductance...	01/20/2004
6653885	On-chip integrated mixer with balun circuit and method of making the same A radio frequency (RF) mixing device wherein RF core circuit elements requiring signal splitting are provided with one or more signal splitting element(s) ("balun(s)") integrated on-chip with the core RF circuit elements. The RF mixing device comprises on...	11/25/2003
6653174	Thyristor-based device over substrate surface A semiconductor device having a thyristor is manufactured in a manner that reduces or eliminates manufacturing difficulties commonly experienced in the formation of such devices. According to an example embodiment of the present invention, a thyristor is ...	11/25/2003
6638844	Method of reducing substrate coupling/noise for radio frequency CMOS (RFCMOS) components in semiconductor technology by backside trench and fill A method of reducing substrate coupling and noise for one or more RFCMOS components comprising the following steps. A substrate having a frontside and a backside is provided. One or more RFCMOS components are formed over the substrate. One or more isolati...	10/28/2003
6613655	Method of fabricating system on chip device A method of fabricating a system on a chip device. On a substrate having a memory cell region and a peripheral circuit region a gate oxide layer and a polysilicon layer are formed. The peripheral circuit region can further be divided into a logic device r...	09/02/2003
6593201	Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (CMOS) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (CMOS) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods are described. In one embodiment, a monolithic inductance...	07/15/2003
6542043	All PMOS fully differential voltage controlled oscillator All PMOS (p channel metal oxide semiconductor) fully differential voltage controlled oscillator (VCO). A fully differential implementation within the present invention provides for a very effective rejection of common mode noises. In addition, the PMOS im...	04/01/2003
6528356	Manufacture of semiconductor capacitively-coupled NDR device for applications such as high-density high-speed memories and power switches A novel capacitively coupled NDR device can be used to implement a variety of semiconductor circuits, including high-density SRAM cells and power thyristor structures. In one example embodiment, the NDR device is used as a thin vertical PNPN structure wit...	03/04/2003
6521487	Method for making a thyristor A semiconductor substrate has at least one active area and a STI surrounding the active area. An N-well and an adjacent P-well are formed in the active area. A dummy gate is formed atop the border between the N-well and the P-well, while simultaneously fo...	02/18/2003
6518141	Method for manufacturing a radio frequency integrated circuit on epitaxial silicon Disclosed are an RF integrated circuit and method for manufacturing the same. The RF integrated circuit comprises an insulating layer including a plurality of windows; epitaxial silicon layers separately formed on the insulating layer; semiconductor eleme...	02/11/2003
6503838	Integrated circuit isolation of functionally distinct RF circuits A method of fabricating an integrated circuit having active components, conductors and isolation regions on a substrate is disclosed, including forming a portion of an isolation region to expose a first area of the substrate, depositing a mask layer over ...	01/07/2003
6472243	Method of forming an integrated CMOS capacitive pressure sensor A capacitive pressure sensor (10) utilizes a diaphragm (38) that is formed along with forming gates (56,57) of active devices on the same semiconductor substrate (11)....	10/29/2002
6448586	Semiconductor current-switching device having operational enhancer and method therefor A novel capacitively coupled NDR device can be used to implement a variety of semiconductor circuits, including high-density SRAM cells and power thyristor structures. In one example embodiment, the NDR device is used as a thin vertical PNPN structure wit...	09/10/2002
6437409	Semiconductor device The first shield pattern is provided between an inductor and the surface of a semiconductor substrate under the inductor. The first shield pattern has plural concave slittings from the side of the edge toward the inside. The second shield pattern provides...	08/20/2002
6355970	Semiconductor device having a high frequency electronic circuit There is provided a semiconductor device including (a) a semiconductor substrate on which an integrated circuit is formed, (b) a ground electrode formed on the semiconductor substrate, (c) a bonding wire through which the ground electrode is grounded, the...	03/12/2002
6346429	Method for fabricating integrated sensors An integrated sensor is fabricated by etching recesses or depressions into the top side of a semiconductor body and by fabricating sensor components in the recesses or depressions. The sensor components are lowered in the recesses or depressions by approx...	02/12/2002
6201287	Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (CMOS) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (CMOS) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods are described. In one embodiment, a monolithic inductance...	03/13/2001
6118305	Semiconductor integrated circuit capable of preventing breakdown of a gate oxide film The present invention provides a semiconductor integrated circuit comprising a plurality of logic circuits, each of which has at least a first field effect transistor with a first gate connected to a high voltage line and at least a second field effect tr...	09/12/2000
6083802	Method for forming an inductor A method for forming an inductor in a semiconductor substrate having a trench therein including the steps of forming a first metal portion in the trench, providing a flowable dielectric material in the trench, depositing a layer of dielectric material ove...	07/04/2000
6074887	Method for fabricating MOSFET-controlled FEA The present invention is directed to fabricating a MOSFET-controlled FEA, in which the emitter array and the cathode electrode are separated and connected to each other by a MOSFET, the cathode electrode and the n-well beneath the emitter array thereby be...	06/13/2000
5793096	MOS transistor embedded inductor device using multi-layer metallization technology An inductor device with a MOS transistor internally installed is disclosed, in which an inductor can be arbitrarily connected in series or in parallel to the respective terminals of MOS transistors by applying a multi-layer wiring technique, thereby reduc...	08/11/1998
5629553	Variable inductance element using an inductor conductor A variable inductance element comprising an inductor conductor 10 having a predetermined shape formed on an insulation layer 40 on the surface of a semiconductor substrate 42, switches 16 and 24 for shorting portions of the inductor conductor 10, and inpu...	05/13/1997
5622876	Method for making monolithic integrated bridge transistor circuit A monolithically integrated, transistor bridge circuit of a type suiting power applications, comprises at least one pair of IGBT transistors (M1 , M2) together with vertically-conducting bipolar junction transistors transistors (T1, T2). These IGBT transi...	04/22/1997
5605851	Method of forming semiconductor device with a buried junction A method is disclosed for forming a first region with conductivity of a first type and second, buried region with conductivity of a second type which forms a junction with the first region. By first and second doping steps, impurities of a first and a sec...	02/25/1997
5578860	Monolithic high frequency integrated circuit structure having a grounded source configuration A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated...	11/26/1996
5464993	Monolithic integrated bridge transistor circuit and corresponding manufacturing process A monolithically integrated, transistor bridge circuit of a type suiting power applications, comprises at least one pair of IGBT transistors (M1,M2) together with vertically-conducting bipolar junction transistors transistors (T1,T2). These IGBT transisto...	11/07/1995
5463231	Method of operating thyristor with insulated gates A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type emitter. The turn-off MOSFET has n-type drain and source lay...	10/31/1995
5360984	IGBT with freewheeling diode A semiconductor device comprises a semiconductor substrate of a first conductive type with a low impurity density; a first region of a second conductive type; a second region of the first conductive type with a high impurity density formed in a surface of...	11/01/1994
4618872	Integrated power switching semiconductor devices including IGT and MOSFET structures Hybrid power switching semiconductor devices advantageously integrate IGT and MOSFET structures. The IGT and MOSFET portions of the overall device include respective gate structures each having an associated gate electrode capacitance, and the hybrid devi...	10/21/1986
4612562	PNPN switch device with capacitor formed outside active device areas A PNPN switch device with a circuit for preventing an error due to a surge voltage. The circuit comprises two capacitors. The first capacitor is formed in a P-type gate region. The second capacitor of a capacitance of an insulation layer sandwiched betwee...	09/16/1986

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Class 257/E27.014 - Including a field-effect type component (EPO)