Class 257/E27.011 - Including a plurality of components in a non-repetitive configuration (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
No. of patents: 27
Last issue date: 01/08/2008

Number	Title	Issue Date
7317241	Semiconductor apparatus having a large-size bus connection In a semiconductor apparatus of the present invention, a plurality of circuit components are provided. A first bus interconnects the circuit components. A second bus interconnects the circuit components. A switching unit outputs a select signal that causes each circ...	01/08/2008
7309908	Standard cell, semiconductor integrated circuit device of standard cell scheme and layout design method for semiconductor integrated circuit device To prevent the potential inversion of a dynamic node attributed to the fact that any wiring line among standard cells as is made of a wiring layer at the same level as that of the dynamic node within a standard cell is laid in adjacency to the dynamic node. I...	12/18/2007
7279726	ESD protection device An ESD protection device for protecting a circuit against electrostatic discharges. The ESD protection device having a series circuit of N diodes, each diode comprising an anode and a cathode. The series circuit being connected between two supply potentials. The dio...	10/09/2007
7238992	Semiconductor circuit for DC-DC converter In a semiconductor integrated circuit for a DC—DC converter, an nMOS-type transistor Qn of a CMOS inverter 1c constituting a driver 1 is electrically floated from a substrate 12 through an n-type well region 11. Thus, the nMOS-ty...	07/03/2007
7238984	Semiconductor memory device, semiconductor device, and portable electronic apparatus A semiconductor memory device includes a nonvolatile memory section; and a volatile memory section, wherein the nonvolatile memory section includes a nonvolatile memory cell having a gate electrode formed on a semiconductor layer via a gate insulating film, a channe...	07/03/2007
7183159	Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices An integrated circuit is formed by identifying multiple regions, each having transistors that have a gate oxide thickness that differs between the multiple regions. One of the regions includes transistors having a nanocluster layer and another of the regions include...	02/27/2007
6696702	Silicon carbide semiconductor switching device An object of the present invention is to improve the relationship between the switching loss and the conduction loss in a semiconductor device comprising a diode and a switching device made of silicon carbide, while suppressing occurrence of voltage oscil...	02/24/2004
6362523	Semiconductor device In a semiconductor device, a semiconductor circuit is located on one surface (front surface) of a semiconductor chip and circuit elements, such as capacitors, resistors, or coils and pads connected to these circuit elements are located on the other surfac...	03/26/2002
6194961	Microstructure including a circuit integrated in a substrate on one surface of which is arranged a flat coil The microstructure includes an electronic circuit formed by a plurality of transistors (6) and a flat coil formed by a conductive wire or a conductive path (14). The coil (10) is arranged on an upper face (8) of the semiconductor substrate (4). The coil (...	02/27/2001
5872384	Component arrangement having magnetic field controlled transistor A controllable magnetic field generator applies a magnetic field to a transistor device at a particular orientation for producing a corresponding Lorentz force on the flow of carriers in the device to advantageously deflect the carriers to facilitate perf...	02/16/1999
5694059	Buffer of fine connection structure for connecting an atom level circuit and a general semiconductor circuit A buffer circuit ID provided for connecting an atom level device (for example, an Atom Relay Transistor circuit), formed by arranging atoms in a predetermined pattern, to a device such as a semiconductor device and a quantum device. The buffer circuit can...	12/02/1997
5561300	Atomic switching devices and logical circuits In an atomic switch, opposite ends of an atom wire are connected to an input and output, and a switching gate is connected to a switching power supply. An input signal is outputted when a switching atom is connected to the atom wire, whereas an input sign...	10/01/1996
5019523	Process for making polysilicon contacts to IC mesas Disclosed is a process for making a bipolar transistor which comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline S...	05/28/1991
4933737	Polysilon contacts to IC mesas A bipolar transistor comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A...	06/12/1990
4714842	Integrated injection logic circuits An "Integrated Injection Logic" integrated circuit in which bias currents are supplied by means of a current injector. The current injector is a multi-layer structure in which current is supplied by means of injection and collection of charge carriers via...	12/22/1987
4654958	Process for forming isolated silicon regions and field-effect devices on a silicon substrate Improved processing for MOS and CMOS transistors formed in an epitaxial-like layer. Field oxide regions are formed followed by the deposition of a polycrystalline or amorphous silicon layer which contacts the substrate at "seed windows" formed between the...	04/07/1987
4616405	Semiconductor device and manufacturing method thereof A semiconductor device which comprises a semiconductor area having one principal surface, an emitter area and a collector area formed selectively and apart each other on the principal surface of said semiconductor area, a base area formed on said one prin...	10/14/1986
4543499	I² L circuitry having operating current supplied by higher-voltage circuitry fabricated on same chip A semiconductor integrated circuit includes low voltage operation circuitries such as I2 L and high voltage operation circuitries operating at a higher voltage than the low voltage operation circuitries. Both of the low and high voltage operati...	09/24/1985
4529456	Method of forming bifets by forming isolation regions connected by diffusion in semiconductor substrate and epitaxial layer The present invention relates to a method of manufacturing a semiconductor integrated circuit device, especially a Bi-MOS IC. It comprises: 1. introducing an impurity of a first conductivity type into a plurality of parts of one major surface of a substrate co...	07/16/1985
4451844	Polysilicon emitter and base contacts separated by lightly doped poly separator A semiconductor device comprising a semiconductor substrate of an N conductivity type; an insulation layer of a predetermined pattern for selectively covering the substrate; a first region of a P conductivity type formed in that area of the substrate whic...	05/29/1984
4430623	Monolithic amplifier comprising a power division and recombination system grouping a plurality of transistors A device combining a certain number of elementary amplifiers formed on the same semiconductor wafer having a very high frequency (about 10 GHz), thus obtaining a monolithic amplifier with a high power and a wide pass band. This amplifier comprises at the ...	02/07/1984
4286177	Integrated injection logic circuits An "Integrated Injection Logic" integrated circuit in which bias currents are supplied by means of a current injector. The current injector is a multi-layer structure in which current is supplied by means of injection and collection of charge carriers via...	08/25/1981
4253034	Integratable semi-conductor memory cell An integratable semi-conductor memory cell has two bipolar transistors which are identical to one another and which have their collectors connected in series with respective circuit parts having a non-linear current characteristic, the respective circuit ...	02/24/1981
4199695	Avoidance of hot electron operation of voltage stressed bootstrap drivers An improved field effect transistor circuit adapted to operate at high switching speeds and to avoid hot electron operation of voltage stressed FET bootstrap drivers. The circuit comprises a voltage control means adapted to maintain a simultaneous gate an...	04/22/1980
4160918	Integrated logic circuit An integrated injection logic circuit comprises a switching element using a unipolar FET whose gates are connected to the collectors of a load transistor. The emitter of the load transistor is connected to a power supply and the base area is combined with...	07/10/1979
4078208	Linear amplifier circuit with integrated current injector A new integrated circuit in which bias currents are supplied by means of a current injector, a multi-layer structure in which current is supplied, by means of injection and collection of charge carriers via rectifying junctions, to zones to be biased of c...	03/07/1978
4056810	Integrated injection logic memory circuit A new integrated circuit in which bias currents are supplied by means of a current injector, a multi-layer structure in which current is supplied, by means of injection and collection of charge carriers via rectifying junctions, to zones to be biased of c...	11/01/1977

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Class 257/E27.011 - Including a plurality of components in a non-repetitive configuration (EPO)