Class 257/E27.01 - With semiconductor substrate only (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E27.018. This
No. of patents: 31
Last issue date: 03/18/2008

Number	Title	Issue Date
7345368	Semiconductor device and the manufacturing method for the same A semiconductor device has a semiconductor substrate having first and second surface, a first resin film formed on the first surface of the semiconductor substrate and a second resin film formed on the second surface of the semiconductor substrate. A projection elec...	03/18/2008
7319263	Semiconductor component with switching element configured to reduce parasitic current flow A semiconductor component is described. In one embodiment, the semiconductor component includes a switching element integrated in the semiconductor component between two functional element semiconductor regions, configured to reduce a parasitic current flow through ...	01/15/2008
7196397	Termination design with multiple spiral trench rings A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device. ...	03/27/2007
7180144	Corner compensation method for fabricating MEMS and structure thereof A corner-compensation method for fabricating MEMS (Micro-Electro-Mechanical System) is provided. The method includes steps of: (a) providing a substrate; (b) forming a conductive layer on the substrate; (c) sequentially forming a masking layer having structural open...	02/20/2007
7075150	Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique The present invention provides a thin channel MOSFET having low external resistance. In broad terms, a silicon-on-insulator structure comprising a SOI layer located atop a buried insulating layer, said SOI layer having a channel region which is thinned by the presen...	07/11/2006
6617661	High voltage component and method for making same A high-voltage component and a method for its manufacture. The component functions to switch currents at high voltages. The component is composed of partial components that are connected in series and are laterally supported on a self-supporting semicondu...	09/09/2003
6563159	Substrate of semiconductor integrated circuit Provided is a substrate of a semiconductor integrated circuit which can easily manufacture an integrated circuit having a soft error resistance, a latch up resistance and an ESD resistance increased. A thickness of a semiconductor surface layer having a l...	05/13/2003
6509605	Flash memory cell having a flexible element A memory element for a flash memory including a first element made from electrically conductive material and having a stable position, an electrically conductive floating gate for storing charge, and means for urging the element from the stable position t...	01/21/2003
5754009	Low cost system for effecting high density interconnection between integrated circuit devices An interfacing system adapted for use with integrated circuits and accompanying devices. The inventive system includes an array of field emissive devices (36) which emit an electrons in response to input signals from multiple first circuits (14) on a firs...	05/19/1998
5413942	Monolithic electronic structures The invention relates to a monolithic two- or three-dimensional multi-element electronic structure made of a ternary or multinary chalogenide and pnictide semiconductor. The invention further relates to a method for the production of monolithic electronic...	05/09/1995
4828629	Process of fabricating silicon oxide and gettering films on polycrystalline silicon resistance element Multi-layer film including a silicon oxide film formed by the CVD method and a film having a gettering function is used as a layer insulation film in a semiconductor device having a resistance constituted by polycrystalline silicon, so that an impurity is...	05/09/1989
4826781	Semiconductor device and method of preparation A method for preparing an improved semiconductor device having a transistor and a capacitor or an element isolating region in or on a semiconductor substrate by a self-alignment process is provided. Each of the elements is formed using a previously formed...	05/02/1989
4743953	Random access memory cell with MIS capacitor having insulator of oxide of doped metal A semiconductor device such as a MIS type capacitor which including a semiconductor substrate of one conductive sign (p-type silicon substrate), a region (n-type) of conductive sign opposite to that of the substrate formed in the substrate, an electrode m...	05/10/1988
4737902	Inner potential generating circuit When a prescribed value of inner potential is provided from AC voltage received by an input terminal (1), first input means (30) and second input means (20) control gate voltages of first and second transistors (8) and (7), respectively, so that the inner...	04/12/1988
4714842	Integrated injection logic circuits An "Integrated Injection Logic" integrated circuit in which bias currents are supplied by means of a current injector. The current injector is a multi-layer structure in which current is supplied by means of injection and collection of charge carriers via...	12/22/1987
4443812	High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device wherein a resistor body made of a P-type impurity region is disposed in a surface region of an N-type semiconductor body so as to form a resistor element, a P-type low doped region is disposed around the resis...	04/17/1984
4430623	Monolithic amplifier comprising a power division and recombination system grouping a plurality of transistors A device combining a certain number of elementary amplifiers formed on the same semiconductor wafer having a very high frequency (about 10 GHz), thus obtaining a monolithic amplifier with a high power and a wide pass band. This amplifier comprises at the ...	02/07/1984
4415816	Monolithically integrated circuit for the production of long pulses A time base circuit feeds a frequency divider via a current amplifier. A current supply circuit is connected to supply the current amplifier and the frequency divider. The current supply may also be connected to supply the time base circuit; otherwise the...	11/15/1983
4339672	Delay circuit constituted by MISFETs A delay circuit includes first and second MISFETs and a capacitance element connected to the common juncture of the first and the second MISFETs. The electricity of the capacitance element is charged through the first MISFET and is discharged through the ...	07/13/1982
4286177	Integrated injection logic circuits An "Integrated Injection Logic" integrated circuit in which bias currents are supplied by means of a current injector. The current injector is a multi-layer structure in which current is supplied by means of injection and collection of charge carriers via...	08/25/1981
4266151	Semiconductor circuit with at least two field effect transistors united in a semiconductor crystal A monolithically integrated MOS-circuit with a substrate bias voltage generator is disclosed. A generator, a control loop, a threshold voltage detector, and a pump circuit are provided. An acceleration of the regulation of the substrate bias voltage is ac...	05/05/1981
4260909	Back gate bias voltage generator circuit A back gate bias voltage generator circuit consists of three MOS transistors (Q4, Q5, Q6) with a separate load element (Q1, Q2, Q3) coupled to the drain of each and a voltage clamp (Q7) connected to an output terminal (16). A terminal at the potential of ...	04/07/1981
4115711	Threshold circuit with hysteresis A hysteresis threshold circuit including two complementary transistors and an output transistor with an injector controlled by the collector of the second complementary transistor. The emitters of the second transistor and of the output transistor are int...	09/19/1978
4092552	Bipolar monolithic integrated push-pull power stage for digital signals The push-pull stage contains a special double emitter transistor which prevents current spikes during switch-over transition. One of two emitters is connected to the base of the double emitter transistor. The junction area of this emitter is many times gr...	05/30/1978
4080577	Semiconductor integrated circuit The disclosed linear amplifier comprises a grounded N+ semiconductor substrate on which an N layer is epitaxially grown. The N epitaxial layer includes three separate P diffusion regions. One of the outermost regions is connected to an input te...	03/21/1978
4078208	Linear amplifier circuit with integrated current injector A new integrated circuit in which bias currents are supplied by means of a current injector, a multi-layer structure in which current is supplied, by means of injection and collection of charge carriers via rectifying junctions, to zones to be biased of c...	03/07/1978
4056810	Integrated injection logic memory circuit A new integrated circuit in which bias currents are supplied by means of a current injector, a multi-layer structure in which current is supplied, by means of injection and collection of charge carriers via rectifying junctions, to zones to be biased of c...	11/01/1977
4013979	CMOS oscillator with first and second MOS transistors of opposed type integrated on the same substrate CMOS oscillator in which the oscillator circuit comprises a first MOS transistor connected by its source to a first terminal of a voltage supply and biased by the current provided by a second MOS transistor of opposed type which is a part of the same inte...	03/22/1977
4005342	Integrated circuit overvoltage protection circuit An overvoltage protection circuit in an integrated circuit for increasing the breakdown voltage of the integrated circuit between first and second terminals thereof. Diode-connected transistors are connected in series between the first terminal and a resi...	01/25/1977
3990098	Structure capable of forming a diode and associated conductive path A diode-forming layered structure comprising a semiconductor body having a layered coating thereon, said semiconductor having a surface region of given conductivity type, said coating being a dispersed metal particle-polymer coating which before electrica...	11/02/1976
3974404	Integrated circuit interface stage for high noise environment An interface circuit for integrated circuit devices which prevents deleterious injection of minority carriers into the substrate during overvoltages applied to a terminal of the integrated circuit. A lateral PNP transistor formed in an N-type region has i...	08/10/1976

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Class 257/E27.01 - With semiconductor substrate only (EPO)