Class 257/E27.009 - Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or Including integrated passive circuit elements (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E27.001. This
No. of patents: 59
Last issue date: 07/29/2008

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Number	Title	Issue Date
7405448	Semiconductor device having a resistance for equalizing the current distribution A first insulating substrate is formed on a heat sink, and a semiconductor element is formed thereon. An insulating resin casing is formed so as to cover the first insulating substrate and the semiconductor element. A second insulating substrate is mounted inside th...	07/29/2008
7323763	Semiconductor device having an improved voltage controlled oscillator A semiconductor device having an improved voltage control oscillator circuit is provided. The voltage control oscillator circuit includes, in combination, a variable-capacitance element and at least one bipolar transistor on a single semiconductor substrate. The var...	01/29/2008
7307331	Integrated radio front-end module with embedded circuit elements A highly integrated radio front-end module. In one embodiment a semiconductor substrate is processed with various circuit components in the substrate, as well as interconnections for the various circuit components, embedding the circuit components into the substrate...	12/11/2007
7268410	Integrated switching voltage regulator using copper process technology Improvements in the level of integration of a core buck and/or boost DC-DC voltage regulator sub-circuit lead to a lower manufacturing cost structure, an improved performance from lessened intrinsic parasitic resistance, a smaller die size and, thus, higher wafer yi...	09/11/2007
7196397	Termination design with multiple spiral trench rings A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device. ...	03/27/2007
7190020	Non-planar flash memory having shielding between floating gates A first plurality of memory cells is formed on pillars in a first column of the array. A second plurality of memory cells is formed in a first set of trenches in the same column. The second plurality of memory cells is coupled to the first plurality of memory cells ...	03/13/2007
7176550	Method and device for forming a winding on a non-planar substrate The electronic device (10) comprises a capacitor (12) and an inductor (11) and is present on a substrate (1) with an unplanarized surface (2). This is realized in winding (21) of the inductor (11) has a thickness of a...	02/13/2007
7170121	Computer system architecture using a proximity I/O switch One embodiment of the present invention provides a proximity I/O switch, which is configured to transfer data between the components in a computer system. This proximity I/O switch is comprised of multiple switch chips, which are coupled together through capacitive ...	01/30/2007
7166904	Structure and method for local resistor element in integrated circuit technology A method and system for forming a semiconductor device having superior ESD protection characteristics. A resistive material layer is disposed within a contact hole on at least one of the contact stud upper and lower surface. In preferred embodiments, the integral re...	01/23/2007
7148554	Discrete electronic component arrangement including anchoring, thermally conductive pad An electronic component arrangement includes a discrete electronic component having first and second terminals and a centre-exposed pad. A substrate has a first electrical conductor electrically connected to the first terminal, a second electrical conductor electric...	12/12/2006
7091577	Voltage-dividing resistor and semiconductor device having the same A voltage-dividing resistor enables a multi-step voltage division. The voltage-dividing resistor includes a polysilicon layer formed on a semiconductor substrate; a metal layer formed on a partial area of the polysilicon layer; an insulating interlayer covering the ...	08/15/2006
6613661	Process for fabricating secure integrated circuit An integrated circuit is protected from reverse engineering by connecting doped circuit elements of like conductivity with a doped implant in the substrate, rather than with a metallized interconnect. The doped circuit elements and their corresponding imp...	09/02/2003
6613978	Radiation shielding of three dimensional multi-chip modules A method for making two sided Multi-Chip Modules (MCMs) that will allow most commercially available integrated circuits to meet the thermal and radiation hazards of the spacecraft environment using integrated package shielding technology. The invention de...	09/02/2003
6614080	Mask programmed ROM inviolable by reverse engineering inspections and method of fabrication A read only memory (ROM) device includes a semiconductor substrate having a first type of conductivity, and a plurality of memory cells on the semiconductor substrate. Each memory cell includes first and second regions of a second conductivity type opposi...	09/02/2003
6608386	Sub-nanoscale electronic devices and processes A new class of electronic systems, wherein microelectronic semiconductor integrated circuit devices are integrated on a common substrate with molecular electronic devices....	08/19/2003
6515304	Device for defeating reverse engineering of integrated circuits by optical means An integrated circuit chip (IC) is equipped with a device for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in a circuit located in the IC. The device can be an opaque structure ...	02/04/2003
6492866	Electronic circuit with bulk biasing for providing accurate electronically controlled resistance A circuit arrangement for generating an electronically controlled electrical resistance by apparatus of at least one MOS transistor. A source-drain junction of the MOS transistor is used for the generation of the electrical resistance between a first and ...	12/10/2002
6459629	Memory with a bit line block and/or a word line block for preventing reverse engineering A method and circuit for blocking unauthorized access to at least one memory cell in a semiconductor memory. The method includes providing a switch and/or a link which assumes an open state when access to the at least one memory cell is to be blocked; and...	10/01/2002
6320200	Sub-nanoscale electronic devices and processes An integrated circuit structure including a plurality of transistors; a plurality of thin-film conductor interconnects, interconnected to form electronic circuits in a predetermined electrical configuration; and a plurality of pairs of contact pads, conne...	11/20/2001
6294816	Secure integrated circuit An integrated circuit is protected from reverse engineering by connecting doped circuit elements of like conductivity with a doped implant in the substrate, rather than with a metallized interconnect. The doped circuit elements and their corresponding imp...	09/25/2001
6284627	Method for wiring semi-conductor components in order to prevent product piracy and manipulation, semi-conductors component made according to this method and use of said semi-conductor component in a chip card The invention relates to a method of fabricating a metallized circuit structure for preventing product piracy and product manipulation, a semiconductor component fabricated by the method as well as the use of the semiconductor component in a chip card. Th...	09/04/2001
6151245	Screened EEPROM cell An EEPROM cell is described as having a screening metal structure formed of preference in the first metal layer and located in substantial overlaying relationship at the floating gate terminal. This defeats the possibility of anomalous readings being obta...	11/21/2000
6117762	Method and apparatus using silicide layer for protecting integrated circuits from reverse engineering A method and apparatus for protecting semiconductor integrated circuits from reverse engineering. Semiconductor active areas are formed on a substrate. A silicide layer is formed both over at least one active area of the semiconductor active areas and ove...	09/12/2000
6064110	Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering An integrated digital circuit is protected from reverse engineering by fabricating all transistors of like conductivity with a common size and geometric layout, providing a common layout for different logic cells, connecting doped circuit elements of like...	05/16/2000
5973375	Camouflaged circuit structure with step implants Connections between implanted regions in a semiconductor substrate, such as the sources or drains of adjacent transistors, are made by buried conductive implants rather than upper level metalizations. The presence or absence of a connection between two im...	10/26/1999
5930663	Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering An integrated digital circuit is protected from reverse engineering by fabricating all transistors of like conductivity with a common size and geometric layout, providing a common layout for different logic cells, connecting doped circuit elements of like...	07/27/1999
5889316	Radiation shielding of plastic integrated circuits A new and improved process by which plastic material forming the plastic body package of an integrated circuit is selectively removed and replaced with a radiation shield having a specific formulation that is customized for a given radiation environment d...	03/30/1999
5875113	Process to prevent the exploitation of illicit knowledge of the structure or function of an integrated circuit An electronic device, such as an integrated circuit, is provided with elements, all of which are never used in a single application. These elements are not absolutely decoys or dummys, although this is a possibility. For a particular application, the elem...	02/23/1999
5866933	Integrated circuit security system and method with implanted interconnections An integrated circuit is protected from reverse engineering by connecting doped circuit elements of like conductivity with a doped implant in the substrate, rather than with a metallized interconnect. The doped circuit elements and their corresponding imp...	02/02/1999
5824571	Multi-layered contacting for securing integrated circuits A method for securing confidential circuitry from observation by unauthorized inspection, and a secure circuit immune from unauthorized inspection according to the method. In one embodiment, confidential data or circuitry is placed on a face of separate s...	10/20/1998
5825042	Radiation shielding of plastic integrated circuits A new and improved process by which plastic material forming the plastic body package of an integrated circuit is selectively removed and replaced with a radiation shield having a specific formulation that is customized for a given radiation environment d...	10/20/1998
5821582	Structures for preventing reverse engineering of integrated circuits Embodiments according to the present invention provide tamper resistant structures which make it more difficult to reverse engineer integrated circuits. In one embodiment, a tamper resistant structure on a passivation layer leaves portions of the passivat...	10/13/1998
5783846	Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering An integrated digital circuit is protected from reverse engineering by fabricating all transistors of like conductivity with a common size and geometric layout, providing a common layout for different logic cells, connecting doped circuit elements of like...	07/21/1998
5742080	Magnetically controlled logic cell A magnetically controlled logic cell comprising a semiconductor substrate (1) coated with a dielectric film and containing four field-effect transistors; four current supply buses in contact with the transistors and arranged on the surface of the dielectr...	04/21/1998
5736777	Method and apparatus for fast self-destruction of a CMOS integrated circuit A method and apparatus for fast electronic self-destruction of a CMOS integrated circuit. The present invention electrically destroys devices containing semiconductor components, securing the components from inspection by detecting the initiation of an at...	04/07/1998
5723876	Device and method for programming a logic level within an intergrated circuit using multiple mask layers A device and method is provided for programming an output logic level based on one or more revisions to mask layers utilized for forming an integrated circuit. The programmed logic level is represented as a logic value and is output from a device embodied...	03/03/1998
5639683	Structure and method for intergrating microwave components on a substrate A component integration structure (10) for a microwave system includes a silicon substrate (12) having a resistivity greater than about 2,000 ohm-cm. A first die (14) is disposed on the silicon substrate, and a first passive element (20) is disposed on th...	06/17/1997
5621347	Electronic circuit having electrically isolated digital and analog circuitry In order to reduce noise in a controlling circuit including digital circuitry and analog circuitry constructed together on a single CMOS integrated circuit, a regulator is constructed as part of the integrated circuit. A power supply is directly connected...	04/15/1997
5589692	Sub-nanoscale electronic systems and devices A new class of electronic systems, wherein microelectronic semiconductor integrated circuit devices are integrated on a common substrate with molecular electronic devices....	12/31/1996
5576988	Secure non-volatile memory array An improved EEPROM structure is disclosed which provides protection against external detection of data stored within the array's memory cells via microprobing by causing the array's word lines to de-activate upon an attempted deprocessing of the array. An...	11/19/1996

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Class 257/E27.009 - Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or Including integrated passive circuit elements (EPO)