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| Number | Title | Issue Date |
| 7443004 | Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a no... | 10/28/2008 |
| 7432542 | Semiconductor device with electrostrictive layer in semiconductor layer and method of manufacturing the same A semiconductor device includes a first semiconductor layer, and a first insulated-gate field-effect transistor of a first conductivity type that is provided in a major surface region of the first semiconductor layer. The semiconductor device further includes an ele... | 10/07/2008 |
| 7432574 | Magnetic recording element and magnetic memory A magnetic recording element according to an example of the present invention includes a magnetic free layer whose magnetization is variable in accordance with a current direction passing through a film and whose direction of easy axis of magnetization is a directio... | 10/07/2008 |
| 7425456 | Antiferromagnetic stabilized storage layers in GMRAM storage devices A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an antiferromagnetic layer formed in proximity to the magnetic storage ... | 09/16/2008 |
| 7425749 | MEMS pixel sensor A MEMS pixel sensor is provided with a thin-film mechanical device having a mechanical body, with a mechanical state responsive to a proximate environment. A thin-film electronic device converts the mechanical state into electrical signals. A pixel interface supplie... | 09/16/2008 |
| 7405087 | Magnetic memory device and method of manufacturing the same A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between t... | 07/29/2008 |
| 7402456 | PCMO thin film with memory resistance properties A method is provided for forming a Pr0.3Ca0.7MnO3 (PCMO) thin film with crystalline structure-related memory resistance properties. The method comprises: forming a PCMO thin film with a first crystalline structure; and, changing the ... | 07/22/2008 |
| 7400006 | Conductive memory device with conductive oxide electrodes A multi-resistive state element that uses barrier electrodes is provided. If certain materials are used as electrodes, the electrodes can be used for multiple purposes. Oxides and nitrides are especially well suited for acting as a barrier layer, and possibly even a... | 07/15/2008 |
| 7396750 | Method and structure for contacting two adjacent GMR memory bit A method and a structure are provided for improving the contact of two adjacent GMR memory bits. Two adjacent bit ends are connected by utilizing a single via. ... | 07/08/2008 |
| 7397077 | Magnetic memory devices having patterned heater layers therein that utilize thermally conductive sidewall materials to increase heat transfer when writing memory data An aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a thermally conductive material coupled to at least one of the patterned thin-film layer and an electrically and thermally isolating mater... | 07/08/2008 |
| 7393713 | Method of fabricating near field optical probe Provided is a method of fabricating a near-field optical probe adapted to a near-field scanning optical microscopy and a near-field information storage device, in which a cantilever and an optical tip are provided in one body and the optical tip is arranged to face ... | 07/01/2008 |
| 7394123 | Magnetic random access memory array with thin conduction electrical read and write lines An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approxima... | 07/01/2008 |
| 7358553 | System and method for reducing shorting in memory cells An MRAM device includes an array of magnetic memory cells having an upper conductive layer and a lower conductive layer separated by a barrier layer. To reduce the likelihood of electrical shorting across the barrier layers of the memory cells, spacers can be formed... | 04/15/2008 |
| 7348653 | Resistive memory cell, method for forming the same and resistive memory array using the same A resistive memory cell employs a photoimageable switchable material, which is patternable by actinic irradiation and is reversibly switchable between distinguishable resistance states, as a memory element. Thus, the photoimageable switchable material is directly pa... | 03/25/2008 |
| 7335960 | MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture A method for forming MRAM cell structures wherein the topography of the cell is substantially flat and the distance between a bit line and a magnetic free layer, a word line and a magnetic free layer or a word line and a bit line and a magnetic free layer is precise... | 02/26/2008 |
| 7326979 | Resistive memory device with a treated interface A multi-resistive state element that uses a treated interface is provided. A memory plug includes at least two electrodes that sandwich a multi-resistive state element. Using different treatments on both electrode/multi-resistive state element interfaces improves th... | 02/05/2008 |
| 7312506 | Memory cell structure A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic l... | 12/25/2007 |
| 7306954 | Process flow for building MRAM structures MRAM structures employ the magnetic properties of layered magnetic and non-magnetic materials to read memory storage logic states. Improvements in switching reliability may be achieved by altering the shape of the layered magnetic stack structure. Forming recessed r... | 12/11/2007 |
| 7291892 | Magnetic random access memory designs with controlled magnetic switching mechanism An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the nar... | 11/06/2007 |
| 7285835 | Low power magnetoelectronic device structures utilizing enhanced permeability materials Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming... | 10/23/2007 |
| 7285836 | Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing A magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate, with each memory stack having two memory cells stacked along the Z axis and each memory cell having an associated biasing layer. Each biasing layer reduces the ... | 10/23/2007 |
| 7267999 | MRAM layer having domain wall traps A common pinned layer is shared by multiple memory cells in an MRAM device. The common pinned layer includes a plurality of domain wall traps that prevent the formation of domain walls within a region of the common pinned layer corresponding to a given memory cell. ... | 09/11/2007 |
| 7256429 | Memory cell with buffered-layer A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a me... | 08/14/2007 |
| 7247510 | Magnetic recording medium and magnetic memory apparatus Disclosed is a magnetic memory apparatus which comprises a patterned magnetic recording medium in which multilayered films each having a first magnetic layer, a nonmagnetic metal layer or a nonmagnetic insulating layer and a second magnetic layer deposited discretel... | 07/24/2007 |
| 7238999 | High performance MEMS packaging architecture An apparatus and method for sensor architecture based on bulk machining of Silicon-On-Oxide wafers and fusion bonding that provides a symmetric, nearly all-silicon, hermetically sealed MEMS device having a sensor mechanism formed in an active semiconductor layer, an... | 07/03/2007 |
| 7230308 | Magnetic random access memory A magnetic random access memory according to an example of the present invention includes a magnetoresistive element, a write line for use in generation of a magnetic field for data writing with respect to the magnetoresistive element, and a strained layer which is ... | 06/12/2007 |
| 7208807 | Structure and method to fabricate high performance MTJ devices for MRAM applications A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a ... | 04/24/2007 |
| 7193283 | Flash cell using a piezoelectric effect The flash cell includes a silicon substrate; a floating gate formed on a predetermined area of the silicon substrate; a control gate formed on the floating gate and the silicon substrate; a piezoelectric layer formed on the control gate; and an upper electrode forme... | 03/20/2007 |
| 7193284 | Magnetoresistance effect element, method of manufacture thereof, magnetic storage and method of manufacture thereof The present invention is aimed at enabling a spin-transfer magnetization switching in the random access magnetic memory by reducing a switching current density in the spin-transfer magnetization switching to an order smaller than 10 MA/cm2 and without cau... | 03/20/2007 |
| 7193288 | Magnetoelectric transducer and its manufacturing method A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The magnetoelectric transducer has a substrate composed of a nonmagnetic substrate, an... | 03/20/2007 |
| 7190020 | Non-planar flash memory having shielding between floating gates A first plurality of memory cells is formed on pillars in a first column of the array. A second plurality of memory cells is formed in a first set of trenches in the same column. The second plurality of memory cells is coupled to the first plurality of memory cells ... | 03/13/2007 |
| 7183568 | Piezoelectric array with strain dependant conducting elements and method therefor A structure (and method) for a piezoelectric device, including a layer of piezoelectric material. A nanotube structure is mounted such that a change of shape of the piezoelectric material causes a change in a stress in the nanotube structure. ... | 02/27/2007 |
| 7157287 | Method of substrate surface treatment for RRAM thin film deposition A method of fabricating a CMR thin film for use in a semiconductor device includes preparing a CMR precursor in the form of a metal acetate based acetic acid solution; preparing a wafer; placing a wafer in a spin-coating chamber; spin-coating and heating the wafer a... | 01/02/2007 |
| 7148533 | Memory resistance film with controlled oxygen content A memory cell and method for controlling the resistance properties in a memory material are provided. The method comprises: forming manganite; annealing the manganite in an oxygen atmosphere; controlling the oxygen content in the manganite in response to the anneali... | 12/12/2006 |
| 7132707 | Magnetic random access memory array with proximate read and write lines cladded with magnetic material An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that ... | 11/07/2006 |
| 7122854 | Semiconductor memory device comprising magneto resistive element and its manufacturing method A semiconductor memory device includes a memory cell, a side wall insulating film, and an interlayer insulating film. A memory cell includes a first ferromagnetic film, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film for... | 10/17/2006 |
| 7115936 | Ferroelectric thin film element and its manufacturing method, thin film capacitor and piezoelectric actuator using same In a manufacturing method for a piezoelectric actuator a first electrode layer is formed on substrate, a ferroelectric thin film is formed on the first electrode layer, and an inorganic protective layer 4 is formed on the ferroelectric thin film. Then, the in... | 10/03/2006 |
| 7091539 | Magnetic random access memory A data selection line (write line) is disposed right on a MTJ element. Upper and side surfaces of the data selection line are coated with yoke materials which have a high permeability. The yoke materials are separated from each other by a barrier layer. Similarly, a... | 08/15/2006 |
| 7081658 | Techniques for reducing Neel coupling in toggle switching semiconductor devices The present invention provides techniques for data storage. In one aspect of the invention, a semiconductor device is provided. The semiconductor device comprises at least one free layer and at least one fixed layer, with at least one barrier layer therebetween. At ... | 07/25/2006 |
| 7071522 | Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a no... | 07/04/2006 |
