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| Number | Title | Issue Date |
| 7411263 | Magnetic memory device A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and g... | 08/12/2008 |
| 7378698 | Magnetic tunnel junction and memory device including the same A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layer... | 05/27/2008 |
| 7326982 | MRAM and method of manufacturing the same A magnetic memory device comprising, a magneto-resistance effect element that is provided at an intersection between a first write line and a second write line. And the magneto-resistance effect element having, an easy axis that extends in a direction of extension o... | 02/05/2008 |
| 7321131 | Universal gates for ising TQFT via time-tilted interferometry Experiments suggest that the mathematically weakest non-abelian TQFT may be physically the most robust. Such TQFT's—the ν=5/2 FQHE state in particular—have discrete braid group representations, so one cannot build a universal quantum computer from these alone. ... | 01/22/2008 |
| 7291891 | In-solid nuclear spin quantum calculation device A voltage is applied across gate electrodes (103A) and (103B) in a two-dimensional electronic system (101) placed under a magnetic field, and the polarity of an electric current passed between ohmic electrodes (102D) and (102S) is ... | 11/06/2007 |
| 7285811 | MRAM device for preventing electrical shorts during fabrication The present invention provides an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor is provided in a trench in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. A... | 10/23/2007 |
| 7265430 | Semiconductor device, magnetic sensor, and magnetic sensor unit A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wi... | 09/04/2007 |
| 7253490 | Magnetic sensor having vertical hall device and method for manufacturing the same A vertical Hall device includes: a substrate; a semiconductor region having a first conductive type and disposed in the substrate; and a magnetic field detection portion disposed in the semiconductor region. The magnetic field detection portion is capable of detecti... | 08/07/2007 |
| 7250624 | Quasi-particle interferometry for logical gates A quantum computer can only function stably if it can execute gates with extreme accuracy. “Topological protection” is a road to such accuracies. Quasi-particle interferometry is a tool for constructing topologically protected gates. Assuming the corrections of ... | 07/31/2007 |
| 7193288 | Magnetoelectric transducer and its manufacturing method A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The magnetoelectric transducer has a substrate composed of a nonmagnetic substrate, an... | 03/20/2007 |
| 7157760 | Magnetic memory device and method of manufacturing magnetic memory device The present invention provides a magnetic memory device capable of stably writing information by efficiently using a magnetic field generated by current flowing in a conductor, which can be manufactured more easily, and a method of manufacturing the magnetic memory ... | 01/02/2007 |
| 7126202 | Spin scattering and heat assisted switching of a magnetic element A method and system for providing a magnetic element is disclosed. The magnetic element include providing a pinned layer, a spacer layer, and a free layer. The method and system also include providing a heat assisted switching layer and a spin scattering layer betwe... | 10/24/2006 |
| 6963099 | Magnetic memory device and method of manufacturing the same A magnetic memory device includes a magnetoresistance configured to store information. A first wiring is provided along a first direction. The first wiring has a function of applying a magnetic field to the magnetoresistance element. The first wiring has a first sur... | 11/08/2005 |
| 6703249 | Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect A method of manufacturing a magnetic random access memory for excluding stress-induced defects in memory cells. The method is composed of forming a first magnetic film over a substrate, forming a tunnel insulating film on the first magnetic film such that... | 03/09/2004 |
| 6692898 | Self-aligned conductive line for cross-point magnetic memory integrated circuits Method of forming a magnetic memory device are disclosed. In one embodiment, a first plurality of conductive lines are formed over a semiconductor workpiece. A plurality of magnetic material lines are formed over corresponding ones of the first plurality ... | 02/17/2004 |
| 6690553 | Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the sub... | 02/10/2004 |
| 6682943 | Method for forming minimally spaced MRAM structures A method of forming minimally spaced MRAM structures is disclosed. A photolithography technique is employed to define masking patterns, on the sidewalls of which spacers are subsequently formed to reduce the distance between any of the two adjacent maskin... | 01/27/2004 |
| 6677165 | Magnetoresistive random access memory (MRAM) cell patterning A process that advantageously forms MRAM cells without the application of ion beam milling processes. Unlike conventional processes that rely on ion beam milling processes to remove materials from a magnetoresistive sandwich from areas other than areas th... | 01/13/2004 |
| 6674662 | Magnetoresistive random access memory and method for reading/writing digital information to such a memory A digital magnetic memory cell device for read and/or write operations having a first and a second magnetic layer, the magnetization of which is oriented parallel or antiparallel for the storage of digital information. An intermediate layer is disposed be... | 01/06/2004 |
| 6674664 | Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cells A ferromagnetic thin-film based digital memory including a memory cell having a bit structure with a nonmagnetic intermediate layer having a memory film of an anisotropic ferromagnetic material on each of the opposite side major surfaces of an intermediat... | 01/06/2004 |
| 6674142 | Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same There is provided, according to one embodiment of this invention, a semiconductor memory device comprising first memory elements to store a first state or a second state according to a change in resistance value, each of the first memory elements comprisi... | 01/06/2004 |
| 6669787 | Method of manufacturing a spin valve structure The invention relates to a method of manufacturing a spin valve structure (1) of the GMR-type. Such a structure includes a stack of a magnetic layer (11a 11b), a nonmagnetic layer (15) and a sense layer (17) of a ferromagnetic material. In order to obtain... | 12/30/2003 |
| 6670660 | Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same There is provided, according to one embodiment of this invention, a semiconductor memory device comprising first memory elements to store a first state or a second state according to a change in resistance value, each of the first memory elements comprisi... | 12/30/2003 |
| 6667526 | Tunneling magnetoresistive storage unit A tunneling magnetoresistive storage unit (TMR unit) includes a hollow cylinder-shaped free-spin element having one open end, a columnlike fixed-spin element formed inside the cylinder-shaped free-spin element, and a thin insulator layer located between t... | 12/23/2003 |
| 6664579 | Magnetic random access memory using bipolar junction transistor A magnetic random access memory (MRAM) having an MTJ cell located between a word line and a gate oxide film, a reference voltage line in a source junction region, and a connection line in a drain junction region. The constitution and fabrication process o... | 12/16/2003 |
| 6661688 | Method and article for concentrating fields at sense layers A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor,... | 12/09/2003 |
| 6657270 | Magnetic random access memory using bipolar junction transistor, and method for fabricating the same A magnetic random access memory (MRAM) is disclosed. The MRAM may include a semiconductor substrate serving as a base of a bipolar junction transistor; an emitter and a collector of the bipolar junction transistor provided at an active region of the semic... | 12/02/2003 |
| 6656371 | Methods of forming magnetoresisitive devices The invention includes a method of forming a magnetoresistive device. A stack is formed. The stack comprises a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first and second magnetic layers. At least one of the first ... | 12/02/2003 |
| 6656372 | Methods of making magnetoresistive memory devices The invention includes methods of forming magnetoresistive devices. In one method, a construction is formed which includes a first magnetic layer, a non-magnetic layer over the first magnetic layer, and a second magnetic layer over the non-magnetic layer.... | 12/02/2003 |
| 6653703 | Semiconductor memory device using magneto resistive element and method of manufacturing the same A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and inc... | 11/25/2003 |
| 6653154 | Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure This invention pertains to a method of fabricating an MRAM structure. The method includes forming a pinned layer within a protective region defined by sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure b... | 11/25/2003 |
| 6649953 | Magnetic random access memory having a transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell A magnetic random access memory (MRAM) having a vertical structure transistor has the characteristics of faster access time than SRAM, high density as with DRAM, and non-volatility like a flash memory device. The MRAM has a vertical structure transistor, ... | 11/18/2003 |
| 6645822 | Method for manufacturing a semiconductor circuit system To simplify a method for manufacturing a memory device having a multiplicity of MRAM cells in a crossing area of conductor elements, a method for manufacturing a semiconductor circuit system, in particular, a memory device or the like, having a plurality ... | 11/11/2003 |
| 6635496 | Plate-through hard mask for MRAM devices A method of fabricating an MRAM device includes patterning a magnetic stack material layer (142) using a herd mask (146) formed by a "plate-through" technique. A resist (144) is deposited over magnetic stack material (142), and the resist (144) is pattern... | 10/21/2003 |
| 6636399 | Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the sub... | 10/21/2003 |
| 6635499 | MRAM sense layer isolation A process for forming an MRAM element. The process comprises patterning a globally deposited sense layer and then forming a spacer about the patterned sense layer so as to cover the lateral edges of the patterned sense layer. Subsequently, a globally depo... | 10/21/2003 |
| 6633497 | Resistive cross point array of short-tolerant memory cells A data storage device includes a resistive cross point array of memory cells. Each memory cell includes a memory element and electrically conductive hard mask material on the memory element. The data storage device may be a Magnetic Random Access Memory (... | 10/14/2003 |
| 6630703 | Magnetoresistive memory cell configuration and method for its production A storage cell configuration including magnetoresistive storage elements located in a cell field between first lines and second lines. A first metalization plane, a second metalization plane and contacts connecting the first metalization plane to the seco... | 10/07/2003 |
| 6628542 | Magnetoresistive device and magnetic memory using the same A magnetoresistive device has a first magnetic layer, a nonmagnetic layer, and a second magnetic layer, with the nonmagnetic layer being interposed between the first and second magnetic layers, the first and second magnetic layers having perpendicular mag... | 09/30/2003 |
| 6627913 | Insulation of an MRAM device through a self-aligned spacer A memory for an integrated circuit and method of fabricating same are provided, comprising providing an array of magnetic memory devices, preferably TMR junctions, that are configured as individual studs and protrude from a substrate. A layer of insulatin... | 09/30/2003 |
