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| Number | Title | Issue Date |
| 7425456 | Antiferromagnetic stabilized storage layers in GMRAM storage devices A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an antiferromagnetic layer formed in proximity to the magnetic storage ... | 09/16/2008 |
| 7374174 | Small electrode for resistance variable devices A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is located between the first and... | 05/20/2008 |
| 7372166 | Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof An electronic semiconductor device has a sublithographic contact area between a first conductive region and a second conductive region. The first conductive region is cup-shaped and has vertical walls which extend, in top plan view, along a closed line of elongated ... | 05/13/2008 |
| 7323707 | Initializing phase change memories A thin film phase change memory may be provided with a layer which changes between amorphous and crystalline states. The threshold voltage of that layer may be increased in a variety of fashions. As a result of the threshold increase, it is possible to transition ce... | 01/29/2008 |
| 7307267 | Electric device with phase change material and parallel heater The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the pha... | 12/11/2007 |
| 7291857 | Non-volatile memory A non-volatile memory (1) which comprises an insulating substrate (11) having a plurality of first electrodes (15) extending therethrough from a front surface of the substrate to a rear surface thereof, a second electrode (12) formed on o... | 11/06/2007 |
| 7276755 | Integrated circuit and method of manufacture An integrated circuit having a plurality of active areas separated from each other by a field region and a method for manufacturing the integrated circuit. A first polysilicon finger is formed over the first active area and the field region and a second polysilicon ... | 10/02/2007 |
| 7265373 | Phase change memory device and method of manufacturing A method of manufacturing a memory device including forming an electrode over a substrate, then forming a dielectric feature proximate a contact region of a sidewall of the electrode, and then forming a phase change feature proximate the contact region. ... | 09/04/2007 |
| 7262502 | Phase-change random access memory device and method for manufacturing the same Disclosed are a phase-change random access memory device and a method for manufacturing the same. The phase-change random access memory includes a first insulation layer having first contact holes, conductive plugs for filling the first contact holes, a second insul... | 08/28/2007 |
| 7259040 | Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby A process for manufacturing a phase change memory array, includes the steps of: forming a plurality of PCM cells, arranged in rows and columns; and forming a plurality of resistive bit lines for connecting PCM cells arranged on a same column, each resistive bit line... | 08/21/2007 |
| 7253466 | Crossbar array microelectronic electrochemical cells The present invention provides microelectronic electrochemical structures and related fabrication methods. A composite microelectronic structure is provided that includes first and second conductors dielectrically isolated from one another at a crossing thereof, the... | 08/07/2007 |
| 7227221 | Multiple bit chalcogenide storage device Multi-terminal chalcogenide memory cells having multiple binary or non-binary bit storage capacity and methods of programming same. The memory cells include a pore region containing a chalcogenide material along with three or more electrical terminals in electrical ... | 06/05/2007 |
| 7129097 | Integrated circuit chip utilizing oriented carbon nanotube conductive layers A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least one sublayer of oriented carbon nanotubes. The conductive layer sandwich preferably contains two sublayers of carbon nanotubes, in which the carbon nano... | 10/31/2006 |
| 7119353 | Electric device with phase change material and method of manufacturing the same The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change ma... | 10/10/2006 |
| 7071023 | Nanotube device structure and methods of fabrication Nanotube device structures and methods of fabrication. Under one embodiment, a method of forming a nanotube switching element includes forming a first structure having at least one output electrode, forming a conductive article having at least one nanotube, and form... | 07/04/2006 |
| 6700211 | Method for forming conductors in semiconductor devices A memory device wherein a diode is serially connected to a programmable resistor and is in electrical communication with a buried digit line. An electrically conductive plug is electrically interposed between the digit line and a strapping layer, thereby ... | 03/02/2004 |
| 6693821 | Low cross-talk electrically programmable resistance cross point memory Low cross talk resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises a bit formed using a perovskite material interposed at a cross point of an upper electrode and lower electrode. Each b... | 02/17/2004 |
| 6690026 | Method of fabricating a three-dimensional array of active media An apparatus comprising control circuitry formed on a substrate, and a plurality of active media coupled to the control circuitry and formed in a plurality of planes over the substrate. A method comprising forming a pair of junction regions on a substrate... | 02/10/2004 |
| 6673700 | Reduced area intersection between electrode and programming element A method comprising forming a sacrificial layer over less than the entire portion of a contact area on a substrate, the sacrificial layer having a thickness defining an edge over the contact area, forming a spacer layer over the spacer, the spacer layer c... | 01/06/2004 |
| 6670628 | Low heat loss and small contact area composite electrode for a phase change media memory device A low heat loss and small contact area electrode structure for a phase change media memory device is described. The memory device includes a composite electrode that includes a dielectric mandrel that is connected with a substrate and having a tapered sha... | 12/30/2003 |
| 6670713 | Method for forming conductors in semiconductor devices A memory device wherein a diode is serially connected to a programmable resistor and is in electrical communication with a buried digit line. An electrically conductive plug is electrically interposed between the digit line and a strapping layer, thereby ... | 12/30/2003 |
| 6653195 | Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combinati... | 11/25/2003 |
| 6653733 | Conductors in semiconductor devices A memory device wherein a diode is serially connected to a programmable resistor and is in electrical communication with a buried digit line. An electrically conductive plug is electrically interposed between the digit line and a strapping layer, thereby ... | 11/25/2003 |
| 6649928 | Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby The invention relates to a phase-change memory device. The device includes a lower electrode disposed in a recess of a first dielectric. The lower electrode comprises a first side and a second side. The first side communicates to a volume of phase-change ... | 11/18/2003 |
| 6646297 | Lower electrode isolation in a double-wide trench The invention relates to a phase-change memory device. The device includes a double-wide trench into which a single film is deposited but two isolated lower electrodes are formed therefrom. Additionally a diode stack is formed that communicates to the low... | 11/11/2003 |
| 6643165 | Electromechanical memory having cell selection circuitry constructed with nanotube technology A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotub... | 11/04/2003 |
| 6642092 | Thin-film transistors formed on a metal foil substrate A method for is provided forming a thin-film transistor (TFT) on a flexible substrate. The method comprises: supplying a metal foil substrate such as titanium (Ti), Inconel alloy, stainless steel, or Kovar, having a thickness in the range of 10 to 500 mic... | 11/04/2003 |
| 6635914 | Microelectronic programmable device and methods of forming and programming the same A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered... | 10/21/2003 |
| 6621095 | Method to enhance performance of thermal resistor device An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled to the contact and ... | 09/16/2003 |
| 6617192 | Electrically programmable memory element with multi-regioned contact An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a ... | 09/09/2003 |
| 6605821 | Phase change material electronic memory structure and method for forming The invention includes an electronic memory structure. The electronic memory structure includes a substrate. A substantially planar first conductor is formed adjacent to the substrate. An interconnection layer is formed adjacent to the first conductor. A ... | 08/12/2003 |
| 6597031 | Ovonic unified memory device and magnetic random access memory device A semiconductor memory device capable of achieving high integration is provided. A semiconductor memory device is provided with: a silicon substrate; bipolar transistors formed on the silicon substrate; an interlayer insulating film which has contact hole... | 07/22/2003 |
| 6597009 | Reduced contact area of sidewall conductor A method including, in a dielectric material over a contact on a substrate, forming a trench to the contact; introducing an electrode material along the sidewalls of the trench; introducing a phase change material over material along a first sidewall; and... | 07/22/2003 |
| 6593176 | METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT The invention relates to a process of forming a phase-change memory device. The process includes forming a salicide structure in peripheral logic portion of the substrate and preventing forming salicide structures in the memory array. The device may inclu... | 07/15/2003 |
| 6586761 | Phase change material memory device A phase change material memory cell may be formed with singulated, cup-shaped phase change material. The interior of the cup-shaped phase change material may be filled with a thermal insulating material. As a result, heat losses upwardly through the phase... | 07/01/2003 |
| 6563164 | Compositionally modified resistive electrode An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor comprises a first material having a ... | 05/13/2003 |
| 6563220 | Method for forming conductors in semiconductor devices A memory device wherein a diode is serially connected to a programmable resistor and is in electrical communication with a buried digit line. An electrically conductive plug is electrically interposed between the digit line and a strapping layer, thereby ... | 05/13/2003 |
| 6555860 | Compositionally modified resistive electrode An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor. The electrode comprises a first por... | 04/29/2003 |
| 6549447 | Memory cell structure A memory cell has a first and second conductor. The first conductor is oriented in a first direction and the second conductor is oriented in a second direction. The first conductor has at least one edge. A state-change layer is disposed on the first condu... | 04/15/2003 |
| 6545903 | Self-aligned resistive plugs for forming memory cell with phase change material Memory devices are disclosed for storage and retrieval of information, wherein resistive plugs are provided above and below a phase change material to form a memory cell. The plugs may be formed by implanting regions in high resistivity material above and... | 04/08/2003 |
