Class 257/E27.003 - Including Gunn-effect device (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E27.002. This
No. of patents: 3
Last issue date: 03/20/1979

Number	Title	Issue Date
4145624	Fet-teld combination with capacitively coupled output electrode means A field effect transistor (FET) is connected in series to a transferred electron logic device (TELD), the TELD being a non-linear load resistor for the FET. The current thresholding property of the TELD and the saturation characteristics of the FET are ut...	03/20/1979
4107718	Bulk semiconductor logic device A semiconductor device including a cathode and an anode for applying a bias electric field to a semiconductor exhibiting negative conductivity under high electric field, a region in which the electric field is locally lower than that in other regions, at ...	08/15/1978
4047199	Semiconductor device The invention disclosed relates to a bulk semiconductor device having a semiconductor element exhibiting a negative conductivity under a high electric field and being capable of generating a high electric field domain therein. The semiconductor device inc...	09/06/1977

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