Class 257/E27.001 - DEVICE CONSISTING OF A PLURALITY OF SEMICONDUCTOR OR OTHER SOLID STATE COMPONENTS FORMED IN OR ON A COMMON SUBSTRATE, E.G., INTEGRATED CIRCUIT DEVICE (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This main group provides for device which includes a plurality
No. of patents: 33
Last issue date: 10/28/2008

Number	Title	Issue Date
7442566	Liquid crystal display device and manufacturing method for the same On a glass substrate, gate bus lines, data bus lines, and TFTs are formed. Then, on the substrate, an insulating film, covering the gate bus lines, data bus lines and TFTs, is formed, and a positive type photoresist film is further formed thereon. Next, through expo...	10/28/2008
7429750	Solid-state element and solid-state element device A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second layer through which current is supplied to the first layer; a light d...	09/30/2008
7425499	Methods for forming interconnects in vias and microelectronic workpieces including such interconnects Methods for forming interconnects in blind vias or other types of holes, and microelectronic workpieces having such interconnects. The blind vias can be formed by first removing the bulk of the material from portions of the back side of the workpiece without thinnin...	09/16/2008
7417297	Film or layer of semiconducting material, and process for producing the film or layer SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦20 nm in thickness, has an HF density of ≦0.1/cm2, and a surface roughness of 0.2 nm RMS. ...	08/26/2008
7388238	Semiconductor integrated circuit device with reduced leakage current The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage cur...	06/17/2008
7378293	MEMS fabrication method A method for singulating a substrate such as a semiconductor wafer populated with a plurality of MEMS devices. A preferred embodiment of the present invention comprises mounting a glass cover onto the wafer, then orienting the wafer and removably mounting it on an a...	05/27/2008
7368346	Method for forming gate structure in flash memory device Device isolation insulation layers passing through an insulation layer and a substrate, are formed, and a portion of them is removed. The insulation layer is removed. A gate oxide layer and a first conductive layer sequentially formed over the device isolation insul...	05/06/2008
7332361	Xerographic micro-assembler Xerographic micro-assembler systems and methods are disclosed. The systems and methods involve manipulating charge-encoded micro-objects. The charge encoding identifies each micro-object and specifies its orientation for sorting. The micro-objects are sorted in a so...	02/19/2008
7317241	Semiconductor apparatus having a large-size bus connection In a semiconductor apparatus of the present invention, a plurality of circuit components are provided. A first bus interconnects the circuit components. A second bus interconnects the circuit components. A switching unit outputs a select signal that causes each circ...	01/08/2008
7302660	Standard cell, standard cell library, semiconductor device, and placing method of the same Of a plurality of standard cells in which an N-well region and a P-well region are vertically formed, some standard cells have a border line between the N-well region and the P-well region which is set to be a low height (first height), and other standard cells have...	11/27/2007
7294209	Apparatus and method for depositing material onto a substrate using a roll-to-roll mask A battery-operated device provided on a thin-film battery and a method for making. Some embodiments provide a system that includes a vacuum chamber, a plurality of pairs of source and take-up reels within the vacuum chamber, including a first source reel that suppli...	11/13/2007
7279416	Methods of forming a conductive structure in an integrated circuit device A conductive structure is formed in an integrated circuit device by forming a lower conductive pattern on a substrate. A barrier metal layer is formed on the lower conductive pattern. The barrier metal layer is flushed with a gas that includes a halogen group gas an...	10/09/2007
7233048	MEMS device trench plating process and apparatus for through hole vias A method for forming through hole vias in a substrate uses a partially exposed seed layer to plate the bottom of a blind trench formed in the front side of a substrate. Thereafter, the plating proceeds substantially uniformly from the bottom of the blind hole to the...	06/19/2007
7230273	Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor A semiconductor module comprises independently operable segments 1 (semiconductor elements) on a SiC substrate. Each segment 1 comprises a source electrode pad 2 and a gate electrode pad 3 both provided to the principal surface side of th...	06/12/2007
7187062	Coupler detector The present invention is a coupler built on a semiconductor substrate, e.g. GaAs. Semiconductor processing allows for small trace and space rules. The tighter design rules provide for tighter coupling than can be achieved by ceramic processes. The greater coupling a...	03/06/2007
7161227	Structure and method for fabricating semiconductor structures and devices for detecting an object High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of mono...	01/09/2007
7157775	Semiconductor constructions The invention includes a semiconductor construction having a pair of channel regions that have sub-regions doped with indium and surrounded by boron. A pair of transistor constructions are located over the channel regions and are separated by an isolation region. Th...	01/02/2007
7087978	Semiconductor resistor with improved width accuracy The accuracy of the width measurement of a semiconductor resistor is improved by modifying the gate mask of a standard MOS transistor fabrication process to form an opening between regions of polysilicon that are used as a mask when the substrate or well material is...	08/08/2006
6973290	Radio architecture A digital radio transceiver integrated circuit includes MOS transistors with normal threshold voltages in the digital circuits, and with reduced threshold voltages in at least some of the analog RF components. This allows the transceiver to be reduced in size and we...	12/06/2005
6643411	Apparatus and method of obtaining a radiation image of an object An apparatus for obtaining a radiation image of an object includes a radiation image sensing unit having a plurality of photoelectric conversion elements two-dimensionally arranged in a matrix manner, and a sensor for detecting irradiation of radiation. T...	11/04/2003
6516098	Apparatus and method of obtaining a radiation image of an object An apparatus for obtaining a radiation image of an object includes a radiation image sensing unit having a plurality of photoelectric conversion elements two-dimensionally arranged in a matrix manner, and a sensor for detecting irradiation of radiation. T...	02/04/2003
6329674	Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure A method for producing a composite structure for microelectronic devices includes producing several microelectronic devices by means of a deposition method, preseeding a surface with growth seeds for a diamond and depositing the diamond layer from a gas p...	12/11/2001
6208006	Thin film spatial filters Thin film spatial filters are disclosed. The filters are constructed with a continuous thin film of low resistance conductor (for example with a resistance of from 10-2 to 108 Ohms-cm) with plurabilty of resistive elements defining p...	03/27/2001
6208521	Film carrier and laminate type mounting structure using same A film carrier to be used for fabricating a new laminate type mounting structure, a new laminate type mounting structure comprising semiconductor elements mounted on the film carrier of the present invention and the laminate type mounting structure compri...	03/27/2001
6110759	Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure A method for producing a composite structure for microelectronic devices includes producing several microelectronic devices by means of a deposition method, pre-seeding a surface with growth seeds for a diamond and depositing the diamond layer from a gas ...	08/29/2000
5731597	Field emitter array incorporated with metal oxide semiconductor field effect transistors and method for fabricating the same The present invention provides field emitter arrays (FEAs) incorporated with metal oxide semiconductor field effect transistors (MOSFETs) and method for fabricating the same which realizes a simultaneous fabrication of two kinds of devices, namely, an FEA...	03/24/1998
5306661	Method of making a semiconductor device using a nanochannel glass matrix The present invention provides a method of forming a semiconductor device mprising the steps of: forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having an average diameter o...	04/26/1994
5264722	Nanochannel glass matrix used in making mesoscopic structures The present invention provides a method of forming a semiconductor device mprising the steps of: forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having an average diameter o...	11/23/1993
4888631	Semiconductor dynamic memory device A semiconductor IC element is three-dimensionally structured with a first active layer formed on a single crystalline silicon substrate and a second active layer formed by melting polycrystalline silicon by irradiation on an insulative layer which electri...	12/19/1989
4793825	Active silicon implant devices A medical implant for injecting into the vascular system of animals comprises a device less than 500 μm in size carrying signal processing means for providing an output in response to an input signal. The input may be acoustic, electromagnetic, temperatu...	12/27/1988
4743954	Integrated circuit for a chemical-selective sensor with voltage output An integrated circuit for a miniaturized solid-state chemical sensor. The integrated circuit includes a chemical-selective membrane which provides an electric signal in response to contact with a particular chemical or group of chemicals in a fluid. The c...	05/10/1988
4264813	High intensity ion source using ionic conductors The present invention describes an ion source which is capable of producing relatively high density ion currents. The ion source employs an electrically biased ionic conductor to supply ions from a reservoir of the atomic species....	04/28/1981
3967208	Amplifying integrated circuit in the MOS technology A negative-feedback band-pass amplifier constructed in accordance with the MOS technology comprises an input stage of the summing amplifier type constituted by two MOS transistors having sources connected to each other and to ground and drains connected t...	06/29/1976

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Class 257/E27.001 - DEVICE CONSISTING OF A PLURALITY OF SEMICONDUCTOR OR OTHER SOLID STATE COMPONENTS FORMED IN OR ON A COMMON SUBSTRATE, E.G., INTEGRATED CIRCUIT DEVICE (EPO)