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| Number | Title | Issue Date |
| 7436001 | Vertical GaN-based LED and method of manufacturing the same A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type G... | 10/14/2008 |
| 7432125 | CMOS image sensor and manufacturing method thereof A CMOS image sensor-manufacturing method includes forming a photodiode on a substrate, forming an insulating layer over the substrate, forming a contact hole in the insulating layer, and forming a gate terminal over the insulating layer. The gate terminal is connect... | 10/07/2008 |
| 7427804 | Optoelectronic semiconductor device and light signal input/output device A optoelectronic semiconductor device, mountable on and electrically connectable to an electro-optical wiring board, a substrate thereof having a light input/output through-hole and electric connection through-holes, the light input/output through-hole being not for... | 09/23/2008 |
| 7423334 | Image sensor module with a protection layer and a method for manufacturing the same An image sensor module with a protection layer and a method for manufacturing the same includes a substrate with an upper surface and a lower surface, a chip is mounted on the upper surface of the substrate, a plurality of wires are electrically connected the bondin... | 09/09/2008 |
| 7417273 | Image sensor with embedded photodiode region and fabrication method thereof An image sensor in which a plurality of pixels having at least a photodiode, a reset transistor, and source follower transistor are formed, wherein each pixel comprises an electrical-charge transfer gate transistor between the photodiode and reset transistor, and a ... | 08/26/2008 |
| 7414269 | Housing for a radiation-emitting component, method for the production thereof, and radiation-emitting component The invention proposes a housing for at least two radiation-emitting components, particularly LEDs, comprising a system carrier (1) and a reflector arrangement (2) disposed on said system carrier (1), the reflector arrangement comprising a numbe... | 08/19/2008 |
| 7411225 | Light source apparatus A light source apparatus and a fabrication method thereof can prevent light interference between light emitting devices adjacent to each other by forming a groove in a sub-mount and bonding a light emitting device to the groove, enhance heat radiating effect as well... | 08/12/2008 |
| 7384807 | Method of fabricating vertical structure compound semiconductor devices A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a me... | 06/10/2008 |
| 7382002 | Photo-detector and related instruments An apparatus comprising at least one multilayer wafer includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the app... | 06/03/2008 |
| 7381995 | Lighting device with flipped side-structure of LEDs Disclosed is a lighting device with flipped side-structure of LEDs, which allows emitted lights to travel in parallel with the mounting surface. Single or plural LED chips are mounted on a substrate with their side surfaces facing the substrate surface. The lighting... | 06/03/2008 |
| 7368756 | Trench cut light emitting diodes and methods of fabricating same A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions.... | 05/06/2008 |
| 7361937 | White-light emitting device and the use thereof A white-light emitting device includes a first die and a second die. The first die has a first semiconductor light-emitting layer emitting a first primary color light. The second die has a second semiconductor light-emitting layer emitting a second primary color lig... | 04/22/2008 |
| 7358599 | Optical semiconductor device having a lead frame and electronic equipment using same An optical semiconductor device 1a includes a lead frame 4 having an aperture 7, a submount 8 disposed on one surface of the lead frame 4 to close the aperture 7, a semiconductor optical element 3 which has an ... | 04/15/2008 |
| 7358539 | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts A flip chip light emitting diode die (12) includes a light-transmissive substrate (20) and a plurality of semiconductor layers (22) are disposed on the light-transmissive substrate (20). The semiconductor layers (22) define a light... | 04/15/2008 |
| 7354789 | CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a tra... | 04/08/2008 |
| 7355228 | Image sensor pixel having photodiode with multi-dopant implantation An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. The N− region is fo... | 04/08/2008 |
| 7355264 | Integrated passive devices with high Q inductors The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the b... | 04/08/2008 |
| 7352068 | Multi-chip module A multi-chip module is provided which allows memory space extension to improve function and performance. A first semiconductor chip is mounted on a mounting substrate, and a first semiconductor memory chip is mounted over the first semiconductor chip. A second semic... | 04/01/2008 |
| 7352010 | Photoelectric conversion module with cooling function A photoelectric conversion module with a cooling function has a semiconductor element to transmit/receive an optical signal, a stem to fix the semiconductor element, a cap to cover the semiconductor element, and a lead to apply an electrical signal to the semiconduc... | 04/01/2008 |
| 7348604 | Light-emitting module The light-emitting module according to the present invention comprises a heat dissipation element, a substrate for example a metal core printed circuit board (MCPCB), or FR4 board which is coupled to one or more light-emitting elements and provides a means for opera... | 03/25/2008 |
| 7344967 | Method for forming an electrode In a semiconductor light-emitting device, a buffer layer, a un-doped GaN layer, a high carrier concentration n+-layer, an n-type layer, an emission layer, a p-type layer, and a p-type contact layer are deposited in sequence on a sapphire substrate. The se... | 03/18/2008 |
| 7342255 | High-brightness light-emitting diode A high-brightness light-emitting diode is disclosed. The high-brightness light-emitting diode, comprises: a chip; a base for holding the chip; and a transparent layer for covering the chip, wherein the chip is connected to an electrode by a metal wire. The improveme... | 03/11/2008 |
| 7335922 | Radiation-emitting-and-receiving semiconductor chip and method for producing such a semiconductor chip A radiation-emitting-and-receiving semiconductor component has at least a first semiconductor layer construction (1) for emitting radiation and a second semiconductor layer construction (2) for receiving radiation, which are arranged in a manner spaced... | 02/26/2008 |
| 7319246 | Luminescent sheet covering for LEDs A lighting apparatus comprising at least one light emitting diode is disposed on an interconnect board to emit ultraviolet or blue radiation. A polymeric layer including a luminophor is disposed about the lighting apparatus to convert at least a portion of the radia... | 01/15/2008 |
| 7317218 | Solid-state imaging device having a punch-through stopper region positioned closer to a signal accumulation region than is an end of the drain region A solid-state imaging device can increase the amount of signal charge accumulation in a photodiode. The solid-state imaging device includes a gate electrode formed on a p-type semiconductor substrate. An n-type signal accumulation region accumulates the signal charg... | 01/08/2008 |
| 7312520 | Interface module for connecting LSI packages, and LSI-incorporating apparatus An interface module for connecting LSI packages includes a connecting member which is to be mounted on an LSI package including an LSI chip and which includes lines to be electrically connected to the LSI package, an optoelectronic transducer which is mounted on the... | 12/25/2007 |
| 7306959 | Methods of fabricating integrated optoelectronic devices This disclosure concerns methods for fabrication of integrated high speed optoelectronic devices. In one example of such a method, a device region that includes a top surface and a bottom surface is formed on a top surface of a substrate. The device region may take ... | 12/11/2007 |
| 7307285 | Optical semiconductor device and a method for manufacturing the same An optical semiconductor device includes a first set of lead frames having a first set of element mounting beds, a second set of lead frames having a second set of element mounting beds, which are arranged substantially on a same plane as the first set of element mo... | 12/11/2007 |
| 7301214 | Component of a radiation detector comprising a substrate with positioning structure for a photoelectric element array In the component of a radiation detector, an upper end face of a pad formation protrusion provided on an upper surface of an MID substrate is equal in height to an upper surface of a photodiode array, first pads are provided on upper surfaces of photodiodes arranged... | 11/27/2007 |
| 7301176 | Semiconductor light emitting device and fabrication method thereof A semiconductor light emitting device includes an LED element, a lead frame on which the LED is mounted, a lead frame electrically connected to the LED element via a wire, transparent resin formed on the LED element and on the lead frames, and light shielding resin ... | 11/27/2007 |
| 7294519 | Semiconductor light-emitting device and method of manufacturing the same Provided are a semiconductor light-emitting device having nano-needles and a method of manufacturing the same. The provided semiconductor light-emitting device improves the extraction efficiency of photons, and includes a gallium nitride (GaN) group multi-layer and ... | 11/13/2007 |
| 7282430 | Melt-based patterning for electronic devices The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the in... | 10/16/2007 |
| 7279715 | Organic electroluminescent display device An organic electroluminescent device includes first and second substrates attached by a seal pattern, array elements including a plurality of thin film transistors formed on the first substrate, a first electrode formed on a rear surface of the second substrate, a p... | 10/09/2007 |
| 7271461 | Stackable optoelectronics chip-to-chip interconnects and method of manufacturing An optoelectronics chip-to-chip interconnects system is provided, including packaged chips to be connected on printed-circuit-board (PCB), multiple-packaged chip, optical-electrical(O-E) conversion means, waveguide-board, and PCB. Single to multiple chips interconne... | 09/18/2007 |
| 7268010 | Method of manufacturing an LED The present invention related to a method of manufacturing an LED, including the steps of: first, forming a tape coppery metal strip; then, continuously pressing circuits on the tape coppery metal strip so as to form a carrier having circuit patterns of electric con... | 09/11/2007 |
| 7256483 | Package-integrated thin film LED LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package subs... | 08/14/2007 |
| 7256436 | Thin-film field-effect transistors and making method In a thin-film field-effect transistor having a MIS structure, the insulator layer is formed of cyanoethylated dihydroxypropyl pullulan. The TFT is prepared by applying a cyanoethylated dihydroxypropyl pullulan solution onto a gate electrode in the form of a metal l... | 08/14/2007 |
| 7242030 | Quantum dot/quantum well light emitting diode A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit a... | 07/10/2007 |
| 7230289 | Solid-state imaging device and method of manufacturing the same The MOS type solid-state imaging device has plural pixels each of which comprises a photo-diode and a MOS transistor on a substrate. A gate electrode is formed on the channel dope layer formed in the surface of the p-type well layer. By ion implantation of n-type im... | 06/12/2007 |
| 7223998 | White, single or multi-color light emitting diodes by recycling guided modes A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected layers for emitting photons when electrically biased in a forward di... | 05/29/2007 |
