Celebrity Inventors
Mark Twain (Samuel L. Clemens) received Patent No. 121,992 for "An Improvement in Adjustable and Detachable Straps for Garments." He later received two more patents: one for a self-pasting scrapbook and one for a game to help players remember important historical dates.
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| Number | Title | Issue Date |
| 7300860 | Integrated circuit with metal layer having carbon nanotubes and methods of making same A method of fabricating an integrated circuit comprises forming or providing a solution containing carbon nanotubes and forming a metal layer utilizing the solution. ... | 11/27/2007 |
| 7301232 | Integrated circuit package with carbon nanotube array heat conductor An integrated circuit package includes a die mounted on a substrate, an integrated heat spreader set above the die, and an array of carbon nanotubes mounted between the die and the integrated heat spreader. The integrated heat spreader is fixed on the substrate, and... | 11/27/2007 |
| 7294877 | Nanotube-on-gate FET structures and applications Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region o... | 11/13/2007 |
| 7268423 | Flexible rewiring plate for semiconductor components, and process for producing it The present invention describes a rewiring plate for components with connection grids of between approx. 100 nm and 10 μm, which rewiring plate includes a base body and passages with carbon nanotubes, the lower end of the passages opening out into contact connectio... | 09/11/2007 |
| 6518177 | Method of manufacturing a semiconductor device A semiconductor device is formed by a compound film γx made of at least one element selected from metal elements and at least one element γ selected from the group consisting of boron, carbon, and nitrogen on a base layer conta... | 02/11/2003 |
| 6383923 | Article comprising vertically nano-interconnected circuit devices and method for making the same A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., havi... | 05/07/2002 |
| 6340822 | Article comprising vertically nano-interconnected circuit devices and method for making the same A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., havi... | 01/22/2002 |
| 6277766 | Method of making fullerene-decorated nanoparticles and their use as a low dielectric constant material for semiconductor devices This invention provides a process for making an insulation layer for use in microelectronic devices, whereby capacitive coupling and propagation delay in the microelectronic devices are reduced. This invention can include the formation of a stable solutio... | 08/21/2001 |
| 6229211 | Semiconductor device and method of manufacturing the same A semiconductor device comprises a base layer, a barrier metal layer formed on the base layer and a metal interconnect formed on the barrier metal layer, the barrier metal layer being made of at least one element selected from metal elements and a... | 05/08/2001 |
| 6031287 | Contact structure and memory element incorporating the same Annular and linear contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conduct... | 02/29/2000 |
