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| Number | Title | Issue Date |
| 7435679 | Alloyed underlayer for microelectronic interconnects Apparatus and methods of fabricating a microelectronic interconnect having an underlayer which acts as both a barrier layer and a seed layer. The underlayer is formed by co-depositing a noble metal and a barrier material, such as a refractory metal, or formed during... | 10/14/2008 |
| 7391089 | Semiconductor device and method of manufacturing the same A semiconductor device which includes a field effect transistor having a gate electrode on the upper side of a semiconductor substrate, with a gate insulation film therebetween, wherein at least the gate insulation film side of the gate electrode includes a film con... | 06/24/2008 |
| 7385292 | Top layers of metal for high performance IC's A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an ... | 06/10/2008 |
| 7372160 | Barrier film deposition over metal for reduction in metal dishing after CMP A protective barrier layer, formed of a material such as titanium or titanium nitride for which removal by chemical mechanical polishing (CMP) is primarily mechanical rather than primarily chemical, formed on a conformal tungsten layer. During subsequent CMP to patt... | 05/13/2008 |
| 7326652 | Atomic layer deposition using photo-enhanced bond reconfiguration An atomic layer deposition process that reduces defective bonds formed when depositing atomic layers on a substrate or atomic layer when forming an integrated circuit device. As the layers are formed, a substrate or previous layer is exposed to a first reactant. Aft... | 02/05/2008 |
| 7157798 | Selective refractory metal and nitride capping A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of... | 01/02/2007 |
| 7122878 | Method to fabricate high reliable metal capacitor within copper back-end process A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, ac contact point is provided in the surface of the first layer of interconnect aligned with which a capaci... | 10/17/2006 |
| 7115996 | Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed. ... | 10/03/2006 |
| 6699781 | Conductive material for integrated circuit fabrication A conductive composition of titanium boronitride (TiBx Ny) is disclosed for use as a conductive material. The titanium boronitride is used as conductive material in the testing and fabrication of integrated circuits. For example, the... | 03/02/2004 |
| 6670267 | Formation of tungstein-based interconnect using thin physically vapor deposited titanium nitride layer A tungsten-based interconnect is created by first providing a structure with an opening (464/470) in a structure and then rounding the top edge of the opening. A titanium nitride layer (150) is physically vapor deposited to a thickness less than 30 nm, ty... | 12/30/2003 |
| 6646456 | Conductive material for integrated circuit fabrication A conductive composition of titanium boronitride (TiBx Ny) is disclosed for use as a conductive material. The titanium boronitride is used as conductive material in the testing and fabrication of integrated circuits. For example, the... | 11/11/2003 |
| 6638852 | Structure and method for preventing barrier failure A structure and method to prevent barrier failure is provided. The present invention replaces a standard titanium-nitride (TiN) barrier metal layer with two separately-formed TiN layers. The two TiN layers provide smaller, mismatched grain boundaries. Dur... | 10/28/2003 |
| 6639319 | Conductive structure in an integrated circuit A method of forming a local interconnect structure is provided. A first barrier layer comprising sputtered titanium nitride is formed over a topographical structure situated upon a field oxide region within a semiconductor substrate. A hard mask layer com... | 10/28/2003 |
| 6635939 | Boron incorporated diffusion barrier material A diffusion barrier layer comprising TiNx By is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the... | 10/21/2003 |
| 6630391 | Boron incorporated diffusion barrier material A diffusion barrier layer comprising TiNx By is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the... | 10/07/2003 |
| 6617691 | Semiconductor device The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another mo... | 09/09/2003 |
| 6614098 | Semiconductor devices and fabrication thereof A method of fabricating a tungsten contact in a semiconductor device comprises providing an oxide layer on a region of a silicon substrate; depositing a sealing dielectric layer over the oxide layer; and depositing an interlevel dielectric layer over the ... | 09/02/2003 |
| 6597067 | Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration An interconnection wiring structure in an integrated circuit chip designed to eliminate electromigration. The structure includes segments of aluminum interspersed with segments of refractory metal, wherein each aluminum segment is followed by a segment of... | 07/22/2003 |
| 6593233 | Semiconductor device and method for manufacturing the same In a semiconductor device having a metal wiring conductor connected to a contact hole formed through an interlayer insulator layer formed on a lower level circuit, a lower level tungsten film is deposited under a condition giving an excellent step coverag... | 07/15/2003 |
| 6570232 | Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same A process for making a local interconnect and the structures formed thereby. The process is practiced by forming a Ti layer having a nitrogen-rich upper portion over a portion of a substrate, forming a refractory metal layer on the Ti layer, forming a Si ... | 05/27/2003 |
| 6569783 | Graded composition diffusion barriers for chip wiring applications A barrier film for a semiconductor device structure. The barrier film includes a compound including nitrogen and at least one of titanium or tantalum, nitrogen in a concentration that varies within the barrier film, and oxygen in a concentration that vari... | 05/27/2003 |
| 6548904 | Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as ... | 04/15/2003 |
| 6518181 | Conductive material for integrated circuit fabrication A conductive composition of titanium boronitride (TiBx Ny) is disclosed for use as a conductive material. The titanium boronitride is used as conductive material in the testing and fabrication of integrated circuits. For example, the... | 02/11/2003 |
| 6511900 | Boron incorporated diffusion barrier material A diffusion barrier layer comprising TiNx By is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the... | 01/28/2003 |
| 6476492 | Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as ... | 11/05/2002 |
| 6472754 | Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another mo... | 10/29/2002 |
| 6468845 | Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of ... | 10/22/2002 |
| 6455419 | System and method of forming a tungsten plug An electronic device is provided that compromises a dielectric layer (12) disposed outwardly from a substrate (10). The dielectric layer (12) has at least one contact opening (14) formed through the dielectric layer (12). The device has an adhesion layer ... | 09/24/2002 |
| 6452277 | Semiconductor device and manufacturing method thereof A silicon oxide film is formed to cover a polysilicon plug. A bowing shaped hole is formed. A barrier metal and a metal film are formed, which are successively subjected to prescribed anisotropic etching. Here, because of the RIE-lag effect, the etch rate... | 09/17/2002 |
| 6433428 | Semiconductor device with a dual damascene type via contact structure and method for the manufacture of same The via contact structure is rendered into a dual damascene type via contact structure having a wide groove and a via contact hole lying below the wide groove, and the interior of the lower via contact hole is filled up with a filling material composed of... | 08/13/2002 |
| 6429503 | Connection element in an integrated circuit having a layer structure disposed between two conductive structures A connection element in an integrated circuit having a layer structure disposed between two conductive structures. The layer structure is formed by an insulating layer, which can be destroyed by application of a predetermined voltage, and a silicon layer.... | 08/06/2002 |
| 6410984 | Conductive structure in an integrated circuit A method of forming a local interconnect structure is provided. A first barrier layer comprising sputtered titanium nitride is formed over a topographical structure situated upon a field oxide region within a semiconductor substrate. A hard mask layer com... | 06/25/2002 |
| 6403458 | Method for fabricating local interconnect structure for integrated circuit devices, source structures A process for making a local interconnect and the structures formed thereby. The process is practiced by forming a Ti layer having a nitrogen-rich upper portion over a portion of a substrate, forming a refractory metal layer on the Ti layer, forming a Si ... | 06/11/2002 |
| 6346731 | Semiconductor apparatus having conductive thin films In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of ... | 02/12/2002 |
| 6344694 | Semiconductor device and method for manufacturing same A semiconductor device including: a semiconductor substrate, and an interconnect made of a titanium silicide film overlying the semiconductor substrate, the titanium silicide film including at least one atom selected from the group consisting of phosphoru... | 02/05/2002 |
| 6337151 | Graded composition diffusion barriers for chip wiring applications A barrier film for a semiconductor device structure. The barrier film includes a compound including nitrogen and at least one of titanium or tantalum, nitrogen in a concentration that varies within the barrier film, and oxygen in a concentration that vari... | 01/08/2002 |
| 6329670 | Conductive material for integrated circuit fabrication A conductive composition of titanium boronitride (TiBx Ny) is disclosed for use as a conductive material. The titanium boronitride is used as conductive material in the testing and fabrication of integrated circuits. For example, the... | 12/11/2001 |
| 6316132 | Structure and method for preventing barrier failure A structure and method to prevent barrier failure is provided. The present invention replaces a standard titanium-nitride (TiN) barrier metal layer with two separately-formed TiN layers. The two TiN layers provide smaller, mismatched grain boundaries. Dur... | 11/13/2001 |
| 6313517 | Vertically integrated semiconductor component A vertically integrated semiconductor component is provided with component levels disposed on different substrates. The substrates are joined by a connecting layer of benzocyclobutene and an electrical connection is provided between component levels by a ... | 11/06/2001 |
| 6307268 | Suppression of interconnect stress migration by refractory metal plug An interconnect structure for use in semiconductor devices, comprising: (a) a thin and elongated aluminum wire connected to a first metal structure; and (b) a plurality of regularly spaced dummy tungsten plugs which are connected to the aluminum wire at o... | 10/23/2001 |
