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| Number | Title | Issue Date |
| 7323783 | Electrode, method for producing same and semiconductor device using same There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film 101, and a first metal layer 102 and a second metal layer 103 se... | 01/29/2008 |
| 7224065 | Contact/via force fill techniques and resulting structures An improved method of forming a semiconductor device structure is disclosed, comprising insertion of a semiconductor wafer into a high-pressure heated chamber and the deposition of a low melting-point aluminum material into a contact hole or via and over an insulati... | 05/29/2007 |
| 7193326 | Mold type semiconductor device A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of s... | 03/20/2007 |
| 6624519 | Aluminum based alloy bridge structure and method of forming same A bridge structure, such as an air bridge, includes a bridge element formed of an alloy including aluminum, copper, and lithium. The alloy may also further include silicon and the amount of lithium of the alloy is generally greater than about 1.0% by weig... | 09/23/2003 |
| 6602788 | Process for fabricating an interconnect for contact holes A process for fabricating an interconnect for contact holes includes forming contact holes in an insulation layer leading to a first interconnect layer, cleaning the hole surface, forming a barrier layer on the hole surface, forming an AlGeCu-containing s... | 08/05/2003 |
| 6522010 | Semiconductor constructions comprising aluminum-containing layers In one aspect the invention includes a method of protecting aluminum within an aluminum-comprising layer from electrochemical degradation during semiconductor processing comprising, providing a material within the layer having a lower reduction potential ... | 02/18/2003 |
| 6509649 | Semiconductor device and fabricating method thereof First, a lower layer wiring is formed on a semiconductor substrate. Then, an interlayer insulating film is formed on the lower layer wiring. Next, a first Ti film is formed on the interlayer insulating film. Thereafter, a TiN film is formed on the first T... | 01/21/2003 |
| 6509590 | Aluminum-beryllium alloys for air bridges A typical air bridge is an aluminum conductor suspended across an air-filled cavity to connect two components of an integrated circuit, two transistors for example. The air-filled cavity has a low dielectric constant which reduces cross-talk between neigh... | 01/21/2003 |
| 6472697 | Assorted aluminum wiring design to enhance chip-level performance for deep sub-micron application A method of manufacturing conductive lines that are thicker (not wider) in the critical paths areas. We form a plurality of first level conductive lines over a first dielectric layer. The first conductive lines run in a first direction. The first level co... | 10/29/2002 |
| 6459153 | Compositions for improving interconnect metallization performance in integrated circuits A semiconductor device includes a substrate and a plurality of interconnect metallization lines defined over the substrate, each interconnect metallization line being provided with an electromigration-impeding composition including a percentage by weight ... | 10/01/2002 |
| 6413863 | Method to resolve the passivation surface roughness during formation of the AlCu pad for the copper process In accordance with the objectives of the invention a new method is provided to create aluminum pads that overlay an electrical contact point. A layer of passivation is deposited over the surface that contains one or more electrical contact points, the lay... | 07/02/2002 |
| 6413866 | Method of forming a solute-enriched layer in a substrate surface and article formed thereby A method of enriching the surface of a substrate with a solute material that was originally dissolved in the substrate material, to yield a uniform dispersion of the solute material at the substrate surface. The method generally entails the use of a solve... | 07/02/2002 |
| 6399471 | Assorted aluminum wiring design to enhance chip-level performance for deep sub-micron application A method of manufacturing conductive lines that are thicker (not wider) in the critical paths areas. We form a plurality of first level conductive lines over a first dielectric layer. The first conductive lines run in a first direction. The first level co... | 06/04/2002 |
| 6396151 | Partially-overlapped interconnect structure and method of making The present invention is concerned with an interconnect structure for providing electrical communication between an interconnect and a contact in a semiconductor device which includes a contact formed of aluminum or aluminum-copper, an aluminum-copper all... | 05/28/2002 |
| 6339026 | Semiconductor processing methods of polishing aluminum-comprising layers In one aspect the invention includes a method of protecting aluminum within an aluminum-comprising layer from electrochemical degradation during semiconductor processing comprising, providing a material within the layer having a lower reduction potential ... | 01/15/2002 |
| 6331482 | Method of VLSI contact, trench, and via filling using a germanium underlayer with metallization A method is disclosed for forming a high aspect ratio submicron VLSI interconnect structure. The method makes use of the high diffusivity of aluminum alloyed with germanium and the low eutectic temperature of the alloy for more uniform filling of intercon... | 12/18/2001 |
| 6316356 | Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication A thermal processing method is described which improves integrated circuit metal polishing and increases conductivity following polish. A method of fabricating a metal layer in an integrated circuit is described which comprises the steps of depositing a l... | 11/13/2001 |
| 6312833 | Multilayered wiring layer A multilayered wiring layer having high thermal stability, high stress migration resistance and low electrical resistance. The wiring layer includes at least two layers formed on a substrate wherein each layer has substantially the same component and wher... | 11/06/2001 |
| 6297156 | Method for enhanced filling of high aspect ratio dual damascene structures An integrated circuit alloy is described which reduces the alloy melting temperature for improved coverage of high aspect ratio features with a reduced deposition pressure. The alloy is used to fabricate metal contacts and interconnects in integrated circ... | 10/02/2001 |
| 6278188 | Semiconductor constructions comprising aluminum-containing layers In one aspect the invention includes a method of protecting aluminum within an aluminum-comprising layer from electrochemical degradation during semiconductor processing comprising, providing a material within the layer having a lower reduction potential ... | 08/21/2001 |
| 6265781 | Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methods Methods for making an aluminum-containing metallization structure, methods and solutions for cleaning a polished aluminum-containing layer, and the structures formed by these methods. The methods for making the aluminum-containing metallization structure ... | 07/24/2001 |
| 6242111 | Anodized aluminum susceptor for forming integrated circuit structures and method of making anodized aluminum susceptor Disclosed is a method of making an anodized aluminum susceptor capable of withstanding an elevated temperature of 590° C., or a temperature as high as 475° C. in the presence of an NF3 plasma, without peeling or cracking, which preferably com... | 06/05/2001 |
| 6229213 | Germanium alloy electrical interconnect structure A method is disclosed for forming a high aspect ratio submicron VLSI interconnect structure. The method makes use of the high diffusivity of aluminum alloyed with germanium and the low eutectic temperature of the alloy for more uniform filling of intercon... | 05/08/2001 |
| 6200894 | Method for enhancing aluminum interconnect properties A method of enhancing the aluminum interconnect properties in very fine metalization patterns interconnecting integrated circuits that improves the texture and electromigration resistance of aluminum in thin films. Enhanced performance can be obtained by ... | 03/13/2001 |
| 6110829 | Ultra-low temperature Al fill for sub-0.25 μm generation of ICs using an Al-Ge-Cu alloy An aluminum fill process for sub-0.25 μm technology integrated circuits that has a reflow temperature less than 400° C. that has low alloy resistivity and excellent electromigration characteristics. The aluminum allow is composed of Al-1% Ge-1% Cu.... | 08/29/2000 |
| 6110819 | Interconnect structure using Al2 Cu for an integrated circuit chip An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al--Cu and interlayer contact regions or studs of Al2 Cu between patterned inte... | 08/29/2000 |
| 6096438 | A1-N1-Y alloy films for electrodes of semiconductor devices and sputtering targets for depositing the A1-N1-Y alloy films The invention provides an Al alloy film for use as an electrode of a semiconductor device and also provides an Al alloy sputtering target used to produce such an Al alloy film wherein the Al alloy film has not only a low resistivity equal to or less than ... | 08/01/2000 |
| 6093968 | Germanium alloy contact to a silicon substrate A method is disclosed for forming a high aspect ratio submicron VLSI interconnect structure. The method makes use of the high diffusivity of aluminum alloyed with germanium and the low eutectic temperature of the alloy for more uniform filling of intercon... | 07/25/2000 |
| 6075278 | Aluminum based alloy bridge structure and method of forming same A bridge structure, such as an air bridge, includes a bridge element formed of an alloy including aluminum, copper, and lithium. The alloy may also further include silicon and the amount of lithium of the alloy is generally greater than about 1.0% by weig... | 06/13/2000 |
| 6069078 | Multi-level interconnect metallization technique A method of forming metallization layers and vias as part of an interconnect structure within an integrated circuit ("IC") is disclosed. The metallization layers and vias are formed of an alloy consisting of tungsten and one or more other materials such a... | 05/30/2000 |
| 6033542 | Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its f... | 03/07/2000 |
| 5993908 | Method of producing an aluminum film A method of producing an aluminum film on a substrate, from which very narrow aluminum conductor tracks can be created that are highly resistant to electromigration and/or stress migration. The substrate with the polycrystalline aluminum film is cooled in... | 11/30/1999 |
| 5980657 | Alloy for enhanced filling of high aspect ratio dual damascene structures An integrated circuit alloy is described which reduces the alloy melting temperature for improved coverage of high aspect ratio features with a reduced deposition pressure. The alloy is used to fabricate metal contacts and interconnects in integrated circ... | 11/09/1999 |
| 5925933 | Interconnect structure using Al2 -Cu for an integrated circuit chip An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al--Cu and interlayer contact regions or studs of Al2 Cu between patterned inte... | 07/20/1999 |
| 5903055 | Conductor line materials and method of making their metal line layers A conductor line material is provided which has an extremely low electric resistance such as 10 μΩ.multidot.cm or less, and in preferred embodiments, about 5 μΩ.multidot.cm, which causes no defect such as hillocks and pinholes even at high temperature... | 05/11/1999 |
| 5897370 | High aspect ratio low resistivity lines/vias by surface diffusion A method of filling high aspect ratio vias and lines on the upper surface of a substrate prevents voids from being formed therein. The method comprises the steps of filling the lines and vias by surface diffusion at room temperature and at a pressure of 1... | 04/27/1999 |
| 5892282 | Barrier-less plug structure Methods are provided for the construction of metal-to-metal connections between non-adjacent layers in a structure, such as a semiconductor device. A first metal conductor layer is provided along a substrate. An anti-reflection cap is provided in overlyin... | 04/06/1999 |
| 5877084 | Method for fabricating high aspect ratio low resistivity lines/vias by surface reaction A structure and method for fabricating circuits which use field effect transistors (FETs), bipolar transistors, or BiCMOS (combined Bipolar/Complementary Metal Oxide Silicon structures), uses low temperature germanium gas flow to affect metals and alloys ... | 03/02/1999 |
| 5866444 | Integrated circuit and method of fabricating the same An integrated circuit using conductive interconnects made of aluminum or a material consisting chiefly of aluminum. Defects due to hillocks and whiskers are prevented. The integrated circuit is composed of TFTs. Gate interconnects are made of aluminum. Be... | 02/02/1999 |
| 5856026 | High aspect ratio low resistivity lines/vias by surface diffusion A structure and method for fabricating circuits which use field effect transistors (FETs), bipolar transistors, or BiCMOS (combined Bipolar/Complementary Metal Oxide Silicon structures), uses low temperature germanium gas flow to affect metals and alloys ... | 01/05/1999 |
