Class 257/E23.158 - Principal metal being aluminum (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E23.157. This subclass
No. of patents: 39
Last issue date: 01/13/2004

Number	Title	Issue Date
6677236	Semiconductor device fabrication method for interconnects that suppresses loss of interconnect metal A semiconductor device fabrication method includes forming a first interconnect and a second interconnect from aluminum or aluminum alloy. The first and second interconnects are formed at different layers and are connected to each other via metal not incl...	01/13/2004
6657299	Semiconductor with a stress reduction layer and manufacturing method therefor A surface of a metal wiring formed over a portion of a substrate is oxidized and annealed to generate a stress reduction layer. Then a passsivation layer is deposited over the stress reduction layer and the remaining portions of the substrate so that a se...	12/02/2003
6597067	Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration An interconnection wiring structure in an integrated circuit chip designed to eliminate electromigration. The structure includes segments of aluminum interspersed with segments of refractory metal, wherein each aluminum segment is followed by a segment of...	07/22/2003
6534870	Apparatus and method for manufacturing a semiconductor device Al wirings of first to fifth layers are formed on a P--SiO2 film, and FSG films are formed between the wiring layers. An organic silicon oxide film is formed between wirings in one same wiring layer. The Al wirings in the first and second layer...	03/18/2003
6433428	Semiconductor device with a dual damascene type via contact structure and method for the manufacture of same The via contact structure is rendered into a dual damascene type via contact structure having a wide groove and a via contact hole lying below the wide groove, and the interior of the lower via contact hole is filled up with a filling material composed of...	08/13/2002
6346749	Semiconductor device A semiconductor device of the present invention comprises a first interconnect and a second interconnect formed from aluminum or aluminum alloy at a different layer to the first interconnect and being connected to the first interconnect via metal not incl...	02/12/2002
6320262	Semiconductor device and manufacturing method thereof The present invention aims at improving the lifetime of the wiring connecting to the hole nearest to the bonding pad and thereby improving the reliability of the semiconductor device. The invention relates to such semiconductor device and method of manufa...	11/20/2001
5982040	Semiconductor device and method for manufacturing the same A semiconductor device includes a semiconductor substrate having a main surface, and a multi-layered wiring layer formed on the main surface of the semiconductor substrate, the multi-layered wiring layer having a plurality of wiring layers insulatively la...	11/09/1999
5929527	Electronic device An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×1018 atoms.multidot.cm-3 or less, carbon atoms at a co...	07/27/1999
5904557	Method for forming multilevel interconnection of semiconductor device A method for forming a multilevel interconnection of a semiconductor device of the present invention includes the steps of forming a first wiring layer by depositing a metallic film containing aluminum on an insulating film of a substrate and patterning t...	05/18/1999
5661345	Semiconductor device having a single-crystal metal wiring The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed;...	08/26/1997
5641993	Semiconductor IC with multilayered Al wiring On an insulating film covering the surface of a semiconductor substrate, a lower wiring layer made of Al or Al alloy is formed. An insulating film having a contact hole is formed on the lower wiring layer and the substrate. An upper wiring layer made of A...	06/24/1997
5606203	Semiconductor device having Al-Cu wiring lines where Cu concentration is related to line width A semiconductor device that includes a wiring line formed from an electrode wiring layer which uses, as an electrode material, an Al alloy containing Cu, wherein wiring line having a size smaller than a crystal grain diameter has a Cu concentration of 0.0...	02/25/1997
5602424	Semiconductor circuit device wiring with F.C.C. structure, plane oriention (100) and aligned with the current direction A semiconductor circuit device wiring is provided in which the wiring connected to a semiconductor element is composed of a crystalline material. The crystal axis direction along which nearest neighboring atoms in a single crystal constituting the crystal...	02/11/1997
5470788	Method of making self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration A method of providing interconnections to a semiconductor integrated chip designed to eliminate electromigration. The method includes the steps of forming an interconnection with segments of Al interspersed with segments of a refractory metal, wherein eac...	11/28/1995
5448113	Micro metal-wiring structure having stress induced migration resistance A micro metal-wiring construction comprises a substrate having a first insulating layer thereon, a metal wiring formed on the first insulating layer of the substrate, and a second insulating layer covering the metal wiring. The coefficient of thermal expa...	09/05/1995
5428251	Multi-layer wiring structure having continuous grain boundaries In a multi-layer wiring structure of an integrated circuit device, occurrence of voids due to electromigration in the vicinity of an interface between upper and lower wiring layers is suppressed. The interface is cleaned in vacuum and grain size of the wi...	06/27/1995
5409862	Method for making aluminum single crystal interconnections on insulators The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed;...	04/25/1995
5407863	Method of manufacturing semiconductor device To improve electromigration resistance and stress migration resistance, when a film is formed by depositing Al or Al alloy on a semiconductor substrate, the film is formed stepwise by stepwise changing the heating temperature of the semiconductor substrat...	04/18/1995
5382831	Integrated circuit metal film interconnect having enhanced resistance to electromigration For enhanced resistance to electromigration failure, a thin metal film interconnect on an integrated circuit chip should use multiple parallel minimum-width lines when the minimum linewidth is less than one and one-half times the mean grain size of the me...	01/17/1995
5378653	Method of forming aluminum based pattern A method of forming an Al-based pattern whereby dry etching with high selectivity of an Al-based metallization layer and effective preventive measures for after-corrosion can be realized. An Al-based multilayer film is etched, for instance, by using an SO...	01/03/1995
5300307	Microstructure control of Al-Cu films for improved electromigration resistance A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film co...	04/05/1994
5266521	Method for forming a planarized composite metal layer in a semiconductor device A method for manufacturing a semiconductor device, comprising the steps of forming an insulating interlayer on a semiconductor substrate to provide a semiconductor intermediate product, providing the insulating interlayer with an opening, forming a first ...	11/30/1993
5262361	Via filling by single crystal aluminum A method for forming single crystal aluminum films 14 on the surface of a substrate 12 (e.g. silicon {111} or Si{111}) is presented, comprising the steps of cleaning the substrate, then maintaining the substrate at certain temperature and pressure conditi...	11/16/1993
5233135	Interconnect for integrated circuits A technique for forming metal interconnect signal lines provides for planarization of an interlevel dielectric layer. A thin layer of material which can function as an etch stop, such as a metal oxide, is formed over the interlevel dielectric. An alignmen...	08/03/1993
5208187	Metal film forming method A metal film forming method comprises steps of: forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal principally composed of aluminum; and heating the non-monocrystallin...	05/04/1993
5101261	Electronic circuit device with electronomigration-resistant metal conductors An electronic circuit device wherein lines are provided to connect elements, and wherein a plurality of island shaped non-line parts, which do not have the function of the lines, are formed along the length of the lines....	03/31/1992
5001541	Advanced electromigration resistant interconnect structure and process An advanced electromigration resistant lead (34) is formed over an insulator layer (36). The lead (34) is processed from a metallic film having a known grain size. A rapid thermal anneal is conducted to increase the grain size and to reduce the number of ...	03/19/1991
4989064	Aluminum alloy line resistive to stress migration formed in semiconductor integrated circuit A first PSG film having a control hole is formed on a silicon substrate formed having a circuit, and a first aluminum alloy line layer resistive to stress migration made of Al-Si alloy is formed on the first PSG film, so as to electrically contact, via th...	01/29/1991
4976809	Method of forming an aluminum conductor with highly oriented grain structure Aluminum alloy polycrystalline conductors having reduced electro-migration tendencies are formed in a semiconductor device by applying a thin film of aluminum or aluminum alloy to an array of shallow holes provided in a dielectric layer the array being pa...	12/11/1990
4923526	Homogeneous fine grained metal film on substrate and manufacturing method thereof A homogeneous fine grained metal film (6') on a substrate in accordance with the present invention comprises multiple metal layers and intervening layers (14) between the respective metal layers, the intervening layers being formed of a compound of the me...	05/08/1990
4922320	Integrated circuit metallization with reduced electromigration The specification discloses a method and a device wherein circuit elements (10) are formed on the surface of a semiconductor body (12). A layer of oxide (22) is applied over the circuit element (10). An aperture (32) is opened through the oxide layer (22)...	05/01/1990
4891112	Sputtering method for reducing hillocking in aluminum layers formed on substrates Hillock formation in a layer of aluminum sputtered from a target onto a substrate is reduced by applying a potential to the substrate sufficient to cause some resputtering of some aluminum from the deposited layer while at the same time sputtered aluminum...	01/02/1990
4744858	Integrated circuit metallization with reduced electromigration The specification discloses a method and a device wherein circuit elements (10) are formed on the surface of a semiconductor body (12). A layer of oxide (22) is applied over the circuit element (10). An aperture (32) is opened through the oxide layer (22)...	05/17/1988
4734754	Semiconductor device having improved structure of multi-wiring layers A semiconductor device comprises a lower wiring layer, an intermediate insulating film on the lower wiring layer and an upper wiring layer crossing the lower wiring layer via the intermediate insulating film. At least one opening is provided in the interm...	03/29/1988
4726983	Homogeneous fine grained metal film on substrate and manufacturing method thereof A homogeneous fine grained metal film (6') on a substrate in accordance with the present invention comprises multiple metal layers and intervening layers (14) between the respective metal layers, the intervening layers being formed of a compound of the me...	02/23/1988
4520554	Method of making a multi-level metallization structure for semiconductor device A semiconductor device having a multi-level metallization system wherein the first level is of aluminum containing up to 3 of percent silicon and the second level is either aluminum or aluminum containing silicon in an amount less than that contained in t...	06/04/1985
4352239	Process for suppressing electromigration in conducting lines formed on integrated circuits by control of crystalline boundary orientation A process for suppressing electromigration in conducting lines formed on integrated circuit structures includes the steps of forming the conducting lines on the integrated circuit structure and heat treating the lines to cause the average grain size in th...	10/05/1982
4302498	Laminated conducting film on an integrated circuit substrate and method of forming the laminate A method in integrated circuit technology of depositing an adherent aluminum film that does not develop significant protrusions, such as "hillocks" and "whiskers", during or following annealing. The aluminum is deposited by evaporation or sputtering techn...	11/24/1981

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Class 257/E23.158 - Principal metal being aluminum (EPO)